Patents by Inventor Kenjiro Koizumi
Kenjiro Koizumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220165568Abstract: A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.Type: ApplicationFiled: February 19, 2020Publication date: May 26, 2022Inventors: Nobutake KABUKI, Masahito SUGIURA, Takashi MATSUMOTO, Kenjiro KOIZUMI, Ryota IFUKU
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Patent number: 10041174Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.Type: GrantFiled: May 29, 2015Date of Patent: August 7, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Matsumoto, Masahito Sugiura, Kenjiro Koizumi, Yusaku Kashiwagi
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Patent number: 9850132Abstract: Provided is a method for growing carbon nanotubes that enables the growth of high-density carbon nanotubes. A high frequency bias voltage is applied to a loading table on which a wafer W having a catalytic metal layer is mounted to generate a bias potential on the surface of the wafer W, and oxygen plasma is used to micronize the catalytic metal layer to form catalytic metal particles. Thereafter, hydrogen plasma is used to reduce the surface of the catalytic metal particles to form activated catalytic metal particles having an activated surface. By using each activated catalytic metal particles as a nucleus, carbon nanotubes are formed.Type: GrantFiled: March 26, 2014Date of Patent: December 26, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Matsumoto, Kenjiro Koizumi
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Publication number: 20160046492Abstract: Provided is a method for growing carbon nanotubes that enables the growth of high-density carbon nanotubes. A high frequency bias voltage is applied to a loading table on which a wafer W having a catalytic metal layer is mounted to generate a bias potential on the surface of the wafer W, and oxygen plasma is used to micronize the catalytic metal layer to form catalytic metal particles. Thereafter, hydrogen plasma is used to reduce the surface of the catalytic metal particles to form activated catalytic metal particles having an activated surface. By using each activated catalytic metal particles as a nucleus, carbon nanotubes are formed.Type: ApplicationFiled: March 26, 2014Publication date: February 18, 2016Inventors: Takashi MATSUMOTO, Kenjiro KOIZUMI
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Publication number: 20150259801Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.Type: ApplicationFiled: May 29, 2015Publication date: September 17, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi MATSUMOTO, Masahito SUGIURA, Kenjiro KOIZUMI, Yusaku KASHIWAGI
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Patent number: 9059178Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.Type: GrantFiled: October 31, 2012Date of Patent: June 16, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Matsumoto, Masahito Sugiura, Kenjiro Koizumi, Yusaku Kashiwagi
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Patent number: 8728917Abstract: A carbon nanotube forming method including providing a target substrate to be processed, a catalytic metal layer being formed on a surface of the target substrate; producing catalytic fine metal particles whose surfaces are oxidized by action of an oxygen plasma on the catalytic metal layer at a temperature T1; and activating the oxidized surfaces of the catalytic fine metal particles by reducing the oxidized surfaces of the catalytic fine metal particles by action of a hydrogen plasma on the catalytic fine metal particles at a temperature T2 higher than the temperature T1. The method further includes growing a carbon nanotube on the activated catalytic fine metal particles by thermal CVD at a temperature T3.Type: GrantFiled: February 23, 2012Date of Patent: May 20, 2014Assignee: Tokyo Electron LimitedInventors: Takashi Matsumoto, Osayuki Akiyama, Kenjiro Koizumi
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Patent number: 8299671Abstract: A rotary floater (30) for supporting an object to be processed (W) is floated by the magnetic attraction of a floating electromagnet assembly (F), and the rotary floater (30) is rotated by the magnetic attraction of a rotary electromagnet assembly (R) while its horizontal position being controlled by the magnetic attraction of a positioning electromagnet assembly (H). The floating electromagnet assembly (F) causes the magnetic attraction to act vertically upwardly, so that the rotary floater (30) is floated and suspended without contact with the inner wall of a processing container (2).Type: GrantFiled: May 29, 2008Date of Patent: October 30, 2012Assignee: Tokyo Electron LimitedInventors: Masamichi Nomura, Kenjiro Koizumi, Shigeru Kasai
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Publication number: 20120220106Abstract: A carbon nanotube forming method including providing a target substrate to be processed, a catalytic metal layer being formed on a surface of the target substrate; producing catalytic fine metal particles whose surfaces are oxidized by action of an oxygen plasma on the catalytic metal layer at a temperature T1; and activating the oxidized surfaces of the catalytic fine metal particles by reducing the oxidized surfaces of the catalytic fine metal particles by action of a hydrogen plasma on the catalytic fine metal particles at a temperature T2 higher than the temperature T1. The method further includes growing a carbon nanotube on the activated catalytic fine metal particles by thermal CVD at a temperature T3.Type: ApplicationFiled: February 23, 2012Publication date: August 30, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi MATSUMOTO, Osayuki Akiyama, Kenjiro Koizumi
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Publication number: 20120118504Abstract: A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus.Type: ApplicationFiled: July 21, 2010Publication date: May 17, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Masamichi Nomura, Kenjiro Koizumi, Shigeru Kasai, Sumi Tanaka
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Patent number: 7887670Abstract: The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base.Type: GrantFiled: November 21, 2007Date of Patent: February 15, 2011Assignee: Tokyo Electron LimitedInventors: Kenjiro Koizumi, Naoki Yoshii
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Publication number: 20100164315Abstract: A rotary floater (30) for supporting an object to be processed (W) is floated by the magnetic attraction of a floating electromagnet assembly (F), and the rotary floater (30) is rotated by the magnetic attraction of a rotary electromagnet assembly (R) while its horizontal position being controlled by the magnetic attraction of a positioning electromagnet assembly (H). The floating electromagnet assembly (F) causes the magnetic attraction to act vertically upwardly, so that the rotary floater (30) is floated and suspended without contact with the inner wall of a processing container (2).Type: ApplicationFiled: May 29, 2008Publication date: July 1, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Masamichi Nomura, Kenjiro Koizumi, Shigeru Kasai
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Publication number: 20080178810Abstract: The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base.Type: ApplicationFiled: November 21, 2007Publication date: July 31, 2008Inventors: Kenjiro Koizumi, Naoki Yoshii