Patents by Inventor Kenjo MATSUI

Kenjo MATSUI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11173834
    Abstract: A vehicle interior lighting device includes a light-emitting portion, a case that includes a side wall surrounding the light-emitting portion and houses the light-emitting portion, and a plate-shaped lens fixed to the case so as to cover an opening of the case and an open end of the side wall defining the opening. Light emitted from the light-emitting portion can be extracted from the entire region of a light extraction surface of the lens including an edge without being reflected.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: November 16, 2021
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Eiki Kawano, Kenjo Matsui
  • Publication number: 20210039551
    Abstract: A vehicle interior lighting device includes a light-emitting portion, a case that includes a side wall surrounding the light-emitting portion and houses the light-emitting portion, and a plate-shaped lens fixed to the case so as to cover an opening of the case and an open end of the side wall defining the opening. Light emitted from the light-emitting portion can be extracted from the entire region of a light extraction surface of the lens including an edge without being reflected.
    Type: Application
    Filed: July 21, 2020
    Publication date: February 11, 2021
    Inventors: Eiki KAWANO, Kenjo Matsui
  • Patent number: 9847449
    Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: December 19, 2017
    Assignees: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Kenjo Matsui, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki, Takanobu Akagi, Sho Iwayama
  • Publication number: 20160163919
    Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 9, 2016
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Kenjo MATSUI, Tetsuya TAKEUCHI, Motoaki IWAYA, Isamu AKASAKI, Takanobu AKAGI, Sho IWAYAMA