Abstract: A process of drying a cast film polymeric disposed upon a workpiece. In this process a cast polymeric film, which includes a volatile organic compound therein, disposed on a workpiece, is contacted with an extraction agent which may be liquid carbon dioxide or supercritical carbon dioxide.

Abstract: A process of removing residue from an etched precision surface. In this process the etched precision surface is contacted with a composition which includes liquid or supercritical carbon dioxide and a fluoride-generating species.

Abstract: A process and apparatus for cleaning filters prior to recycling or disposal. In this process and apparatus liquid or supercritical carbon dioxide contacts the plugged pores of a filter under conditions in which carbon dioxide remains in the liquid or supercritical state.

Abstract: A process of providing a semiconductor device with electrical interconnection capability wherein a sacrificial material is introduced into topographical features of the semiconductor device prior to chemical mechanical polishing so that debris formed during chemical mechanical polishing is incapable of falling into topographical features present on the semiconductor device. The sacrificial material is thereupon removed by liquid or supercritical carbon dioxide.

Abstract: A process and apparatus for cleaning filters prior to recycling or disposal. In this process and apparatus liquid or supercritical carbon dioxide contacts the plugged pores of a filter under conditions in which carbon dioxide remains in the liquid or supercritical state.

Abstract: A process of cleaning semiconductor processing, handling and manufacturing equipment in which such equipment is contacted with a cleaning effective amount of liquid or supercritical carbon dioxide.

Abstract: A process of depositing a thin film on a nanometer structure in which a coating, which may be an aerogel material or metallic seed layer, is prepared. The coating is combined with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is deposited upon a nanometer structure under supercritical conditions. Supercritical conditions are removed whereby the supercritical composition is removed and the coating solidifies into a thin solid film.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical, carbon dioxide and a co-solvent, and a surfactant.

Abstract: A process of depositing a thin film on a nanometer structure in which a coating, which may be an aerogel material or metallic seed layer, is prepared. The coating is combined with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is deposited upon a nanometer structure under supercritical conditions. Supercritical conditions are removed whereby the supercritical composition is removed and the coating solidifies into a thin solid film.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical carbon dioxide and a co-solvent, and a surfactant.

Abstract: A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.

Abstract: The present invention relates to formation of air gaps in metal/insulator interconnect structures, and to the use of supercritical fluid (SCF)-based methods to extract sacrificial place-holding materials to form air gaps in a structure. Supercritical fluids have gas-like diffusivities and viscosities, and very low or zero surface tension, so SCF's can penetrate small access holes and/or pores in a perforated or porous bridge layer to reach the sacrificial material. Examples of SCFs include CO2 (with or without cosolvents or additives) and ethylene (with or without cosolvents or additives). In a more general embodiment, SCF-based methods for forming at least partially enclosed air gaps in structures that are not interconnect structures are disclosed.

Abstract: A method for the removal of fluorine or chlorine residue from an etched precision surface such as a semiconductor sample is provided which comprises exposing said precision surface to liquid CO.sub.2 under appropriate conditions that are sufficient to remove the residue from the precision surface. Cryogenic aerosol may be used in conjunction with liquid CO.sub.2.

Abstract: A method for the removal of residue from an etched precision surface such as a semiconductor sample is provided which comprises exposing said precision surface to a supercritical fluid or liquid CO.sub.2 under appropriate conditions that are sufficient to remove the residue from the precision surface. Cryogenic aerosol may be used in conjunction with either the supercritical fluid or liquid CO.sub.2.

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone is effective in removing polymer residue from a substrate, and especially from an integrated circuit chip having aluminum lines thereon.