Abstract: A semiconductor device includes a first semiconductor chip including an output electrode portion on a front surface thereof, the output electrode portion including a plurality of electrode regions, each of which is provided at a respective position of the output electrode portion, and a plurality of wires, each electrode region being connected to a different one or more wires among the plurality of wires, through which a respective amount of output current is output. A total number of the different one or more wires connected to each electrode region is set depending on the respective position of the electrode region of the output electrode portion, so that the electrode region has a respective current amount per wire that is equal to or less than a respective predetermined value.

Abstract: An overcurrent detection circuit including a detection unit for detecting whether a current flowing between main terminals of a main switching device used by a power conversion device is an overcurrent, and a switching unit for switching among thresholds used for determining the overcurrent in the detection unit according to in which phase of the power conversion device the main switching device is used, in which the detection unit includes a plurality of comparison units for comparing a parameter according to the current flowing between main terminals, and thresholds different from each other, and the switching unit is for switching a comparison unit to use for detection of the overcurrent among the plurality of comparison units.

Abstract: A semiconductor device includes a semiconductor unit, a printed circuit board and a case, including a bottom portion formed in a plate-like shape and a side wall portion surrounding an outer periphery of the bottom portion of the case. The bottom portion has a main circuit area having an opening, and a control circuit area adjacent to the main circuit area in a plan view. The semiconductor unit is attached in the main circuit area from a rear surface of the bottom portion such that an insulating plate of the semiconductor unit is exposed to inside the case through the opening. The printed circuit board is disposed in the control circuit area on the front surface of the bottom portion via a spacer, having a gap between the printed circuit board and the front surface of the bottom portion.

Abstract: An object of the present invention is to provide a drive capability switching circuit for a semiconductor element and a drive device for a semiconductor element capable of suppressing a radiation noise while reducing a loss occurred in switching of the semiconductor element. An IGBT drive capability switching circuit includes a gate voltage detection unit that detects a voltage level of a gate voltage based on a gate signal which is input to an IGBT in a mirror period, and a gate signal switching unit that switches a voltage level of the gate signal based on the voltage level detected by the gate voltage detection unit.

Abstract: A conductive plate includes a first slit formed in the space between a first chip area and a second chip area, a second slit formed in the space between the first chip area and a terminal area, and a third slit formed in the space between the second chip area and the terminal area. The first slit is a continuous line that penetrates through the conductive plate, whereas the second and third slits are continuous lines that do not penetrate through the conductive plate.

Abstract: A semiconductor device includes a semiconductor unit, a printed circuit board and a case, including a bottom portion formed in a plate-like shape and a side wall portion surrounding an outer periphery of the bottom portion of the case. The bottom portion has a main circuit area having an opening, and a control circuit area adjacent to the main circuit area in a plan view. The semiconductor unit is attached in the main circuit area from a rear surface of the bottom portion such that an insulating plate of the semiconductor unit is exposed to inside the case through the opening. The printed circuit board is disposed in the control circuit area on the front surface of the bottom portion via a spacer, having a gap between the printed circuit board and the front surface of the bottom portion.

Abstract: A semiconductor device includes a first semiconductor chip including an output electrode portion on a front surface thereof, the output electrode portion including a plurality of electrode regions, each of which is provided at a respective position of the output electrode portion, and a plurality of wires, each electrode region being connected to a different one or more wires among the plurality of wires, through which a respective amount of output current is output. A total number of the different one or more wires connected to each electrode region is set depending on the respective position of the electrode region of the output electrode portion, so that the electrode region has a respective current amount per wire that is equal to or less than a respective predetermined value.

Abstract: A drive device for a semiconductor element includes a drive circuit receiving from outside a pulsed drive signal for driving ON/OFF of the semiconductor element; and a protection circuit receiving a signal representing a chip temperature of the semiconductor element and, when the detected chip temperature exceeds an overheating threshold temperature, controlling operation of the drive circuit so as to adjust a drive control voltage that is provided to the semiconductor element; and a drive information output circuit externally outputting drive information corresponding to the adjusted drive control voltage that is provided to the semiconductor element by the drive circuit.

Abstract: The area projections or a spacer occupies on the upper surface of a resin casing increases as the size of a power semiconductor module decreases, and therefore another means for defining a clearance between a control board and the resin casing is desired. A power semiconductor module is provided, including: a housing which houses a power semiconductor chip; and at least one control pin or guide pin which protrudes outward from an upper surface of the housing, wherein the at least one control pin or guide pin has at least one step in a height direction from the upper surface of the housing toward a tip farthest from the housing.

Abstract: A driving device of a semiconductor device includes a plurality of protection factor detection units, an identification signal generation unit, a continuation signal generation unit, a signal selection unit, and an alarm signal output unit. The protection factor detection units detect an occurrence of a protection factor. The protection factor requires a protection operation of a semiconductor device. The protection factor detection units output a protection factor generation signal. When any protection factor detection units output the protection factor generation signal, the identification signal generation unit generates a protection factor identification signal. The continuation signal generation unit generates a protection factor continuation signal while the protection factor detection unit outputs the protection factor generation signal. The signal selection unit selects the protection factor identification signal and the protection factor continuation signal.

Abstract: A driving device of a semiconductor device includes a plurality of protection factor detection units, an identification signal generation unit, a continuation signal generation unit, a signal selection unit, and an alarm signal output unit. The protection factor detection units detect an occurrence of a protection factor. The protection factor requires a protection operation of a semiconductor device. The protection factor detection units output a protection factor generation signal. When any protection factor detection units output the protection factor generation signal, the identification signal generation unit generates a protection factor identification signal. The continuation signal generation unit generates a protection factor continuation signal while the protection factor detection unit outputs the protection factor generation signal. The signal selection unit selects the protection factor identification signal and the protection factor continuation signal.

Abstract: The area projections or a spacer occupies on the upper surface of a resin casing increases as the size of a power semiconductor module decreases, and therefore another means for defining a clearance between a control board and the resin casing is desired. A power semiconductor module is provided, including: a housing which houses a power semiconductor chip; and at least one control pin or guide pin which protrudes outward from an upper surface of the housing, wherein the at least one control pin or guide pin has at least one step in a height direction from the upper surface of the housing toward a tip farthest from the housing.

Abstract: A drive device for a semiconductor element includes a drive circuit receiving from outside a pulsed drive signal for driving ON/OFF of the semiconductor element; and a protection circuit receiving a signal representing a chip temperature of the semiconductor element and, when the detected chip temperature exceeds an overheating threshold temperature, controlling operation of the drive circuit so as to adjust a drive control voltage that is provided to the semiconductor element; and a drive information output circuit externally outputting drive information corresponding to the adjusted drive control voltage that is provided to the semiconductor element by the drive circuit.