Patents by Inventor Kenshiro ASAHI

Kenshiro ASAHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240006187
    Abstract: An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH3-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.
    Type: Application
    Filed: October 28, 2021
    Publication date: January 4, 2024
    Inventors: Toshinori DEBARI, Reiko SASAHARA, Teppei OKUMURA, Woonghyun JEUNG, Kenshiro ASAHI, Hiroyuki ABE, Seungmin KIM
  • Publication number: 20220301821
    Abstract: There is provided a gas treatment apparatus for performing gas treatment on a substrate. The gas treatment apparatus includes: a chamber in which the substrate is accommodated; a gas supply mechanism configured to individually supply a fluorine-containing gas and an alkaline gas; and a gas introduction member configured to cause the fluorine-containing gas and the alkaline gas supplied from the gas supply mechanism to merge with each other and introduce a mixed gas in which the fluorine-containing gas and the alkaline gas are mixed into the chamber. A portion of the gas introduction member including a merging point of the fluorine-containing gas and the alkaline gas is made of an aluminum-based material. A resin coating is formed on at least the portion including the merging point.
    Type: Application
    Filed: March 4, 2022
    Publication date: September 22, 2022
    Inventors: Yuji SAEGUSA, Tatsuya HANDA, Reiko SASAHARA, Kenshiro ASAHI, Kazuaki NISHIMURA, Akihiro YOSHIMURA, Masaki FURUSAWA
  • Patent number: 11127597
    Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 21, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Reiko Sasahara, Satoshi Toda, Takuya Abe, Tsuhung Huang, Yoshie Ozawa, Ken Nakagomi, Kenichi Nakahata, Kenshiro Asahi
  • Publication number: 20200111674
    Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.
    Type: Application
    Filed: March 28, 2018
    Publication date: April 9, 2020
    Inventors: Reiko SASAHARA, Satoshi TODA, Takuya ABE, Tsuhung HUANG, Yoshie OZAWA, Ken NAKAGOMI, Kenichi NAKAHATA, Kenshiro ASAHI