Abstract: There are provided a photosensitive resin composition containing at least one precursor selected from the group consisting of a polyimide precursor and a polybenzoxazole precursor, a compound having a sulfurous ester structure, and a photoradical polymerization initiator, and satisfies at least one of the following conditions 1, . . . , or 3; a pattern forming method using a photosensitive film formed from the photosensitive resin composition; a cured film formed from the photosensitive resin composition; a laminate including the cured film; and a device having the cured film or the laminate. the condition 1: the precursor contains a radically polymerizable group, the condition 2: the compound having a sulfurous ester structure contains a radically polymerizable group, and the condition 3: the photosensitive resin composition further contains a compound containing a radically polymerizable group, other than the precursor and the compound having a sulfurous ester structure.

Abstract: Provided is a laminate that allows semiconductor elements to be transferred over a wide range of processing margins using lasers of various wavelengths, without damaging the elements or leaving behind any pasty residue. This laminate is a substrate in which a laser-transmitting substrate 1, a resin film, and a semiconductor element are laminated in the stated order. The absorbance of the resin film at a wavelength of 248 nm, 266 nm, or 355 nm expressed in terms of a film thickness of 1.0 ?m us 0.4-5.0, and the adhesive strength of the resin film with respect to the semiconductor elements is 0.02-0.3 N/cm.

Abstract: It is intended to provide a negative type photosensitive resin composition that ensures high aspect ratio pattern processability, high storage stability, and high curability and also provides a cured product with good mechanical characteristics and high heat resistance. A negative type photosensitive resin composition comprising a polymer compound (A), a cationic polymerizable compound (B), a cationic polymerization initiator (C), and a solvent (D) wherein the component (A) contains at least one compound selected from the group consisting of polyamide, polyimide, polybenzoxazole, precursors thereof, and copolymers thereof and wherein both the relations 0.6A?B+0.5C?0.98A and 0.05(B+C)?C?0.25(B+C) are satisfied where A (moles), B (moles), and C (moles) represent the quantities of all carboxylic acid residues, all diamine residues, and all monoamine residues, respectively, contained in the component (A).

Abstract: Provided is a laminate that can be implemented with a wide processing margin and without adhesive residue or damage to a semiconductor element in the transfer of the semiconductor element using laser light of various wavelengths. The laminate is obtained by laminating a substrate 1 having laser permeability, a resin film 1 and a resin film 2 in this order, wherein the light absorbance of the resin film 1 calculated for a film thickness of 1.0 ?m at any wavelength of 200 nm to 1100 nm is 0.4-5.0, and the adhesive strength of the surface of the resin film 2 on the side opposite that of the resin film 1 side is 0.02-0.3 N/cm.