Abstract: The present invention is a compound for forming a metal-containing film, being a reaction product between a compound having two or more diol structures per molecule and a Sn compound, and being a monomolecular compound containing two or more Sn atoms per molecule. This can provide: a metal compound having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Abstract: The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R1 and R2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms.

Abstract: The present invention provides a method for forming by plasma irradiation a resist underlayer film with excellent dry etching resistance and film thickness uniformity, the method including: (i) applying a composition containing (A) a polymer and (B) an organic solvent, and performing heat treatment; and (ii) forming a resist underlayer film by plasma irradiation, where the polymer (A) contains a constitutional unit of formula (1) and has a weight-average molecular weight of 2,500 to 20,000: where Ar1 and Ar2 represent a benzene ring or naphthalene ring, X represents a structure of formula (1A), Y represents an organic group, “k” represents 0 or 1, where “n1” represents 0 or 1, “n2” represents 1 or 2, R2 represents a hydrogen atom, an organic group, or a structure of formula (1B), R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group of formula (1C), “n3” represents 0 to 2, where RA represents an organic group, RB represents a hydrogen atom or an organic group, and where R4 r

Abstract: The present invention is a compound for forming a metal-containing film, containing: at least one metal atom selected from the group consisting of Ti, Zr, and Hf; and a ligand coordinated to the metal atom, where the ligand contains a group represented by any of the following formulae (a-1) to (a-3), where R1 represents a hydrogen atom or an organic group having 1 to 10 carbon atoms, and “*” represents an attachment point. This can provide: a compound for forming a metal-containing film that gives a metal-containing film that makes it possible to obtain an excellent pattern profile, has high adhesiveness to a resist upper layer film, and suppresses fine-pattern collapse in a fine patterning process of a semiconductor device manufacturing process; a composition for forming a metal-containing film, containing the compound; and a patterning process using the composition.

Abstract: The present invention is a method for forming a resist underlayer film on a substrate, the method including the steps of: (i) forming an underlayer-film-precursor film by coating a substrate with a composition for forming a resist underlayer film, containing (A) a polymer and an organic solvent, to obtain a coating film and subjecting the coating film to heat treatment at a temperature of 100° C. or higher and 800° C. or lower for 10 seconds to 7,200 seconds to cure the coating film; and (ii) forming a resist underlayer film by curing the underlayer-film-precursor film by plasma irradiation, where the polymer (A) is an aromatic ring-containing resin containing no hydroxy groups or organic groups represented by the following general formulae (1) in a repeating unit contained in the polymer, where “p” represents 0 or 1, and “*” represents an attachment point.

Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1) as a repeating unit; and (B) an organic solvent, where the polymer (A) has a molecular weight of 300 to 3,000, and the polymer (A) contains neither a repeating unit containing a hydroxy group as a substituent nor a repeating unit containing a heteroaromatic ring, and where Ar represents an unsubstituted divalent aromatic group having 6 to 30 carbon atoms. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits much better dry etching resistance than those of conventional organic underlayer film materials.

Abstract: The present invention is a compound (A) for forming a metal-containing film, where the compound is derived from a metal-containing compound, being a hydrolysate, condensate, or hydrolysis condensate of a metal compound represented by the following formula (A-1), and the compound (A) further has a ligand derived from an organic compound represented by the following formula (1). This can provide a compound for forming a metal-containing film having better dry etching resistance than those of conventional organic underlayer film materials and also having high filling property and/or high planarizing property.

Abstract: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: A patterning process capable of readily and efficiently forming a fine pattern without damaging a substrate is provided.

Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1); and (C) an organic solvent, where the polymer (A) contains no hydroxy groups and the crosslinking agent (B) is contained in an amount of 5 to 50 parts by mass relative to 100 parts by mass of the polymer (A). This provides: a composition for forming a resist underlayer film that exhibits much better dry etching resistance than conventional resist underlayer film materials; a patterning process in which the composition is used as a resist underlayer film material; and a method for forming a resist underlayer film.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R? represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.

Abstract: The present invention is a planarizing agent for forming an organic film, including an aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein a blended composition that includes the planarizing agent and a preliminary composition containing an organic film-forming resin and a solvent, and having a complex viscosity of 1.0 Pa·s or more in a temperature range of 175° C. or higher has a temperature range in which a complex viscosity of the blended composition is less than 1.0 Pa·s in a temperature range of 175° C. or higher. This provides a planarizing agent for forming an organic film to yield a composition for forming an organic film having a high planarizing ability; a composition for forming an organic film containing this planarizing agent; a method for forming an organic film using this composition; and a patterning process.

Abstract: A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR1 and AR2 represent a benzene ring or naphthalene ring optionally with a substituent; W1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W1; W2 represents a divalent organic group having 1 to 80 carbon atoms; R1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.

Abstract: A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material.

Abstract: A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R? represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.

Abstract: A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR1 and AR2 represent a benzene ring or naphthalene ring optionally with a substituent; W1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W1; W2 represents a divalent organic group having 1 to 80 carbon atoms; R1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.