Patents by Inventor Kenta Masuda

Kenta Masuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200190774
    Abstract: The working machine includes an operator seat, an armrest arranged adjacent to the operator seat, an operation lever arranged in front of the armrest, and a jug dial arranged adjacent to the operation lever. The jog dial is arranged on a position allowing an operator seated on the operator seat to operate the operation lever and the jog dial with an arm placed on the armrest.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 18, 2020
    Applicant: KUBOTA CORPORATION
    Inventors: Yoichi NISHIGORI, Ryo MASUDA, Kenta KAMAKURA
  • Publication number: 20200038746
    Abstract: At least one memory device of a game system stores a plurality of instructions, which, when executed by at least one processor, cause the at least one processor to: set, on a touch panel, a reception area for receiving a direction designation operation; move, in accordance with a movement of a touch position on the touch panel, an operation position in a direction corresponding to a moving direction of the touch position by a distance longer than a moving distance of the touch position; acquire a designated direction based on a direction from a reference position corresponding to the reception area to the operation position; and execute game processing based on the designated direction.
    Type: Application
    Filed: September 26, 2019
    Publication date: February 6, 2020
    Inventors: Masaki NAKAMURA, Yugo KISHINO, Yuji FUJISHIRO, Kenta OGAWA, Hideki YANAGIHARA, Kei MASUDA, Junichi TAYA, Hideto NISHIYAMA, Taku HAMASAKI
  • Publication number: 20190262709
    Abstract: At least one processor of a game control device is configured to: acquire a movement direction of the touch position, when a touch position moves under a state in which a touch panel is being touched; execute first game processing based on the movement direction; detect that the movement direction has changed to any movement direction having an angle of a predetermined angle or more with respect to a movement direction acquired at a predetermined timing; and execute second game processing based on one of the movement direction before the change and the movement direction after the change, when the change in the movement direction is detected.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Inventors: Masaki NAKAMURA, Yuji FUJISHIRO, Kenta OGAWA, Yugo KISHINO, Kei MASUDA, Junichi TAYA, Hideto NISHIYAMA, Taku HAMASAKI
  • Publication number: 20190262700
    Abstract: At least one processor of a game control device is configured to: display an object on a display region, in a game in which the object is moved in accordance with an operation of a user on a touch panel; set a first region of the display region as an operation region; move the object based on the operation of the user on the operation region; and change the operation region to a second region, in which the object is prevented from being arranged at an edge portion of the second region, in a predetermined game situation, which is one of a situation in which at least a part of the object is outside the first region and a situation in which the object is arranged at an edge portion of the first region.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Inventors: Masaki NAKAMURA, Yuji FUJISHIRO, Kenta OGAWA, Yugo KISHINO, Kei MASUDA, Junichi TAYA, Hideto NISHIYAMA, Taku HAMASAKI
  • Patent number: 10283579
    Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: May 7, 2019
    Assignee: JOLED, Inc.
    Inventors: Yuichiro Ishiyama, Yuichi Kato, Tomoatsu Kinoshita, Takashige Fujimori, Kenta Masuda, Keiichi Akamatsu
  • Publication number: 20180151659
    Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Applicant: JOLED INC.
    Inventors: Yuichiro Ishiyama, Yuichi Kato, Tomoatsu Kinoshita, Takashige Fujimori, Kenta Masuda, Keiichi Akamatsu
  • Patent number: 9935165
    Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: April 3, 2018
    Assignee: JOLED, INC.
    Inventors: Yuichiro Ishiyama, Yuichi Kato, Tomoatsu Kinoshita, Takashige Fujimori, Kenta Masuda, Keiichi Akamatsu
  • Patent number: 9816200
    Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: November 14, 2017
    Assignees: TAIHEIYO CEMENT CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kenta Masuda, Kouki Ichitsubo, Masakazu Suzuki, Kiyoshi Nonaka, Tomohisa Kato, Hideaki Tanaka
  • Publication number: 20170062541
    Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
    Type: Application
    Filed: July 11, 2016
    Publication date: March 2, 2017
    Applicant: JOLED INC.
    Inventors: Yuichiro Ishiyama, Yuichi Kato, Tomoatsu Kinoshita, Takashige Fujimori, Kenta Masuda, Keiichi Akamatsu
  • Patent number: 9556035
    Abstract: A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: January 31, 2017
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Kouki Ichitsubo, Kenta Masuda, Masakazu Suzuki, Kohei Kawano, Jun Kumasaka
  • Patent number: 9382121
    Abstract: A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: July 5, 2016
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Kenta Masuda, Kouki Ichitsubo, Kohei Kawano, Masakazu Suzuki, Jun Kumasaka, Hideaki Tanaka
  • Publication number: 20160160386
    Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.
    Type: Application
    Filed: November 27, 2013
    Publication date: June 9, 2016
    Inventors: Kenta MASUDA, Kouki ICHITSUBO, Masakazu SUZUKI, Kiyoshi NONAKA, Tomohisa KATO, Hideaki TANAKA
  • Patent number: 9054049
    Abstract: A driving substrate includes: a protective layer including an etching surface; and a film layer including one or more convex portions on a surface thereof. The film layer is in contact with a rear surface of the protective layer. The one or more convex portions each have a surface being flush with the etching surface.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: June 9, 2015
    Assignee: Sony Corporation
    Inventors: Kenta Masuda, Keiichi Akamatsu, Yuichi Kato
  • Patent number: 8913206
    Abstract: A device includes a substrate, a metal layer being formed in a region on a part of the substrate, and a first insulating film being provided on the substrate and the metal layer and including a trench provided at a position corresponding to a part or all of a region where the metal layer is not provided.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: December 16, 2014
    Assignee: Sony Corporation
    Inventors: Kenta Masuda, Yuichi Kato, Keiichi Akamatsu
  • Publication number: 20140301933
    Abstract: A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
    Type: Application
    Filed: August 23, 2012
    Publication date: October 9, 2014
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Kenta Masuda, Kouki Ichitsubo, Kohei Kawano, Masakazu Suzuki, Jun Kumasaka, Hideaki Tanaka
  • Publication number: 20140227159
    Abstract: A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.
    Type: Application
    Filed: July 3, 2012
    Publication date: August 14, 2014
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Kouki Ichitsubo, Kenta Masuda, Masakazu Suzuki, Kohei Kawano, Atsushi Kumasaka
  • Publication number: 20140220781
    Abstract: A driving substrate includes: a protective layer including an etching surface; and a film layer including one or more convex portions on a surface thereof. The film layer is in contact with a rear surface of the protective layer. The one or more convex portions each have a surface being flush with the etching surface.
    Type: Application
    Filed: April 7, 2014
    Publication date: August 7, 2014
    Applicant: SONY CORPORATION
    Inventors: Kenta Masuda, Keiichi Akamatsu, Yuichi Kato
  • Patent number: 8759849
    Abstract: A driving substrate includes: a protective layer including an etching surface; and a film layer including one or more convex portions on a surface thereof, the film layer being in contact with a rear surface of the protective layer, the one or more convex portions each having a surface being flush with the etching surface.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: June 24, 2014
    Assignee: Sony Corporation
    Inventors: Kenta Masuda, Keiichi Akamatsu, Yuichi Kato
  • Publication number: 20130056134
    Abstract: A method for cutting a honeycomb molded body includes applying laser in a wavelength range of from about 0.7 ?m to about 2.5 ?m to the honeycomb molded body to form a cut guide groove on a periphery of the honeycomb molded body. The honeycomb molded body is made of a material including silicon carbide. The honeycomb molded body is manufactured by extrusion molding. The honeycomb molded body has a number of cells, a cell wall interposed between the cells and a peripheral wall formed on a side face of the honeycomb molded body. The cells are placed in parallel with one another in a longitudinal direction of the cells. The honeycomb molded body is cut along the cut guide groove to a predetermined length using a wire.
    Type: Application
    Filed: August 31, 2012
    Publication date: March 7, 2013
    Applicant: IBIDEN CO., LTD.
    Inventors: Kenta MASUDA, Katsuyuki KIRIYAMA
  • Publication number: 20120293760
    Abstract: A device includes a substrate, a metal layer being formed in a region on a part of the substrate, and a first insulating film being provided on the substrate and the metal layer and including a trench provided at a position corresponding to a part or all of a region where the metal layer is not provided.
    Type: Application
    Filed: April 27, 2012
    Publication date: November 22, 2012
    Applicant: Sony Corporation
    Inventors: Kenta Masuda, Yuichi Kato, Keiichi Akamatsu