Patents by Inventor Kenta Nakayashiki
Kenta Nakayashiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240072190Abstract: A solar cell comprising a silicon substrate and a layered structure arranged on a surface of the silicon substrate, the layered structure comprising; a first layer comprising a percentage of crystalline material arranged within an amorphous matrix, the first layer being arranged on the surface of the silicon substrate; a second layer comprising a percentage of crystalline material arranged within an amorphous matrix, the second layer being interposed between the first layer and the surface of the silicon substrate; wherein the percentage of crystalline material in the first layer is greater than the percentage of crystalline material in the second layer.Type: ApplicationFiled: December 20, 2021Publication date: February 29, 2024Applicant: REC SOLAR PTE. LTD.Inventors: Muzhi TANG, Priyadharsini KARUPPUSWAMY, Shu Yunn CHONG, Kenta NAKAYASHIKI
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Publication number: 20240063314Abstract: A solar cell comprising a crystalline silicon substrate, a semiconductor layer arranged on a back surface of the substrate which is configured not to face a radiative source, when the solar cell is in use, and a transparent-conductive region arranged on a surface of the semiconductor layer, wherein the transparent conductive region comprises; a first layer having a first work function; and a second layer having a second work function and being interposed between the first layer and the semiconductor layer; wherein the second work function of the second layer is greater than the first work function of the first layer.Type: ApplicationFiled: December 20, 2021Publication date: February 22, 2024Applicant: REC SOLAR PTE. LTD.Inventors: Kenta NAKAYASHIKI, Shu Yunn CHONG, Ngeah Theng CHUA
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Patent number: 9054237Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: GrantFiled: November 24, 2010Date of Patent: June 9, 2015Assignee: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Patent number: 8426724Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: GrantFiled: November 24, 2010Date of Patent: April 23, 2013Assignee: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Publication number: 20120129342Abstract: A method for fabricating a backside metallization structure on a semiconductor substrate including moving a printhead having at least one nozzle orifice relative to the semiconductor substrate, and feeding an Al passivation layer ink and an AgAl soldering pad ink through said printhead such that both said Al passivation layer ink and said AgAl soldering pad ink are simultaneously extruded from said at least one nozzle orifice and deposited onto the semiconductor substrate.Type: ApplicationFiled: February 3, 2012Publication date: May 24, 2012Applicant: SOLARWORLD INNOVATIONS GMBHInventors: Kenta Nakayashiki, David K. Fork, Scott E. Solberg
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Patent number: 7999175Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: GrantFiled: September 9, 2008Date of Patent: August 16, 2011Assignee: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Publication number: 20110070676Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: ApplicationFiled: November 24, 2010Publication date: March 24, 2011Applicant: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Publication number: 20110070681Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: ApplicationFiled: November 24, 2010Publication date: March 24, 2011Applicant: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Publication number: 20100233840Abstract: Devices, solar cell structures, and methods of fabrication thereof, are disclosed. Briefly described, one exemplary embodiment of the device, among others, includes: a co-fired p-type silicon substrate, wherein the bulk lifetime is about 20 to 125 ?s; an n+ layer formed on the top-side of the p-silicon substrate; a silicon nitride anti-reflective (AR) layer positioned on the top-side of the n+ layer; a plurality of Ag contacts positioned on portions of the silicon nitride AR layer, wherein the Ag contacts are in electronic communication with the n+-type emitter layer; an uniform Al back-surface field (BSF or p+) layer positioned on the back-side of the p-silicon substrate on the opposite side of the p-type silicon substrate as the n+ layer; and an Al contact layer positioned on the back-side of the Al BSF layer. The device has a fill factor (FF) of about 0.75 to 0.85, an open circuit voltage (VOC) of about 600 to 650 mV, and a short circuit current (JSC) of about 28 to 36 mA/cm2.Type: ApplicationFiled: April 12, 2010Publication date: September 16, 2010Inventors: Ajeet Rohatgi, Ji-Weon Jeong, Kenta Nakayashiki, Vijay Yelundur, Dong Seop Kim, Mohamed Hilali
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Publication number: 20100230771Abstract: A method for diffusing two dissimilar dopant materials onto a semiconductor cell wafer in a single thermal processing step. The method includes placing a first dopant source on a semiconductor cell wafer, placing said cell wafer into a thermal processing chamber comprising one or more cell wafer slots, subjecting said cell wafer to a thermal profile; and annealing said cell wafer in the presence of a second dopant source.Type: ApplicationFiled: March 13, 2009Publication date: September 16, 2010Applicant: PALO ALTO RESEARCH CENTER INCORPORATEDInventors: David K. Fork, Kenta Nakayashiki
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Patent number: 7790574Abstract: Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.Type: GrantFiled: December 13, 2005Date of Patent: September 7, 2010Assignee: Georgia Tech Research CorporationInventors: Ajeet Rohatgi, Dong Seop Kim, Kenta Nakayashiki, Brian Rounsaville
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Publication number: 20100139754Abstract: A solar cell includes two backside metallization materials that are simultaneously extrusion deposited on a semiconductor substrate such that both a back surface field (BSF) metal layer (e.g., Al) and a solder pad metal structure (e.g., AgAl) are coplanar and non-overlapping, and the two metals abut each other to form a continuous metal layer that extends over the backside surface of the substrate. In one embodiment, the solder pad metal is formed directly on the backside surface of the substrate, either by co-extruding the two materials in the form of a continuous sheet, or by depositing spaced apart structures that are then flattened to contact each other by way of an air jet device. In another embodiment, the solder pad metal is disposed over a thin layer of the BSF metal (i.e., either disposed directly on the BSF metal, or disposed on an intervening barrier layer) using a co-extrusion head.Type: ApplicationFiled: December 9, 2008Publication date: June 10, 2010Applicant: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, David K. Fork, Scott E. Solberg
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Publication number: 20100130014Abstract: Techniques are disclosed for surface texturing multicrystalline silicon using drop jetting technology to form mask or etch patterns on a surface of a multicrystalline silicon substrate.Type: ApplicationFiled: November 26, 2008Publication date: May 27, 2010Applicant: PALO ALTO RESEARCH CENTER INCORPORATEDInventors: Kenta Nakayashiki, Baomin Xu, Scott A. Elrod
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Publication number: 20100059109Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: ApplicationFiled: September 9, 2008Publication date: March 11, 2010Applicant: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Publication number: 20060183307Abstract: Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.Type: ApplicationFiled: December 13, 2005Publication date: August 17, 2006Inventors: Ajeet Rohatgi, Dong Kim, Kenta Nakayashiki, Brian Rounsaville
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Patent number: D889393Type: GrantFiled: September 6, 2019Date of Patent: July 7, 2020Assignee: REC Solar Pte. Ltd.Inventors: Kenta Nakayashiki, Bjoern Erik Andersson
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Patent number: D904975Type: GrantFiled: March 4, 2020Date of Patent: December 15, 2020Assignee: REC Solar Pte. Ltd.Inventors: Kenta Nakayashiki, Bjoern Erik Andersson
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Patent number: D940644Type: GrantFiled: March 4, 2020Date of Patent: January 11, 2022Assignee: REC SOLAR PTE. LTD.Inventors: Kenta Nakayashiki, Bjoern Erik Andersson
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Patent number: D988248Type: GrantFiled: December 28, 2021Date of Patent: June 6, 2023Assignee: REC SOLAR PTE. LTD.Inventors: Kenta Nakayashiki, Bjoern Erik Andersson
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Patent number: D988249Type: GrantFiled: December 28, 2021Date of Patent: June 6, 2023Assignee: REC SOLAR PTE. LTD.Inventors: Kenta Nakayashiki, Bjoern Erik Andersson