Patents by Inventor Kentaro Iizuka

Kentaro Iizuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10981250
    Abstract: A SiC wafer is produced from a single crystal SiC ingot. Wafer producing apparatus includes a holding unit for holding the ingot, a flattening unit for grinding the upper surface of the ingot, thereby flattening the upper surface, a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a wafer separating unit for holding the upper surface of the ingot to separate the wafer from the ingot along the separation layer, and a wafer storing unit for storing the wafer separated from the ingot.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: April 20, 2021
    Assignee: DISCO CORPORATION
    Inventors: Kentaro Iizuka, Naoki Omiya, Takashi Mori, Satoshi Yamanaka, Kazuya Hirata
  • Patent number: 10916460
    Abstract: A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: February 9, 2021
    Assignee: DISCO CORPORATION
    Inventors: Kentaro Iizuka, Naoki Omiya, Takashi Mori, Motomi Kitano, Kazuya Hirata, Hiroshi Kitamura
  • Patent number: 10910241
    Abstract: A wafer producing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to apply a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be produced from an upper surface of the ingot held by a second holding table, to form a peel-off layer; a wafer peeling unit configured to hold the upper surface of the ingot held by a third holding table and peel off the wafer from the peel-off layer; and a carrying tray having an ingot support section configured to support the ingot and a wafer support section configured to support the wafer.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: February 2, 2021
    Assignee: DISCO CORPORATION
    Inventors: Kentaro Iizuka, Naoki Omiya
  • Patent number: 10840116
    Abstract: A wafer producing apparatus includes an ingot grinding unit that grinds the upper surface of an ingot to planarize the upper surface, a laser irradiation unit that positions the focal point of a laser beam with such a wavelength as to be transmitted through the ingot to a depth corresponding to the thickness of a wafer to be produced from the upper surface of the ingot and irradiates the ingot with the laser beam to form a separation layer, a wafer separating unit that separates the wafer from the ingot, and a tray having a support part that supports the separated wafer.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: November 17, 2020
    Assignee: DISCO CORPORATION
    Inventors: Kentaro Iizuka, Naoki Omiya
  • Patent number: 10799987
    Abstract: Disclosed herein is a laser processing apparatus for forming a separation layer inside an ingot by applying a laser beam to an end surface of the ingot in the condition where the focal point of the laser beam is set inside the ingot, the laser beam having a transmission wavelength to the ingot. The laser processing apparatus includes a holding unit for holding the ingot, a moving unit for moving the holding unit in a direction parallel to the end surface of the ingot held by the holding unit, a laser beam applying unit for applying the laser beam to the ingot held by the holding unit, an imaging unit for detecting the position of the ingot in the direction parallel to the end surface of the ingot, and a height detecting unit for detecting the height of the end surface of the ingot held by the holding unit.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: October 13, 2020
    Assignee: DISCO CORPORATION
    Inventors: Kentaro Iizuka, Koyo Honoki, Shuichi Torii, Yutaka Kobayashi, Ryohei Yamamoto, Kazuya Hirata
  • Publication number: 20200130106
    Abstract: A wafer producing apparatus includes an ingot grinding unit that grinds the upper surface of an ingot to planarize the upper surface, a laser irradiation unit that positions the focal point of a laser beam with such a wavelength as to be transmitted through the ingot to a depth corresponding to the thickness of a wafer to be produced from the upper surface of the ingot and irradiates the ingot with the laser beam to form a separation layer, a wafer separating unit that separates the wafer from the ingot, and a tray having a support part that supports the separated wafer.
    Type: Application
    Filed: October 23, 2019
    Publication date: April 30, 2020
    Inventors: Kentaro IIZUKA, Naoki OMIYA
  • Publication number: 20190181024
    Abstract: A wafer producing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to apply a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be produced from an upper surface of the ingot held by a second holding table, to form a peel-off layer; a wafer peeling unit configured to hold the upper surface of the ingot held by a third holding table and peel off the wafer from the peel-off layer; and a carrying tray having an ingot support section configured to support the ingot and a wafer support section configured to support the wafer.
    Type: Application
    Filed: December 4, 2018
    Publication date: June 13, 2019
    Inventors: Kentaro IIZUKA, Naoki OMIYA
  • Publication number: 20190006212
    Abstract: A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 3, 2019
    Inventors: Kentaro Iizuka, Naoki Omiya, Takashi Mori, Motomi Kitano, Kazuya Hirata, Hiroshi Kitamura
  • Publication number: 20180354067
    Abstract: A SiC wafer is produced from a single crystal SiC ingot. Wafer producing apparatus includes a holding unit for holding the ingot, a flattening unit for grinding the upper surface of the ingot, thereby flattening the upper surface, a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a wafer separating unit for holding the upper surface of the ingot to separate the wafer from the ingot along the separation layer, and a wafer storing unit for storing the wafer separated from the ingot.
    Type: Application
    Filed: June 5, 2018
    Publication date: December 13, 2018
    Inventors: Kentaro Iizuka, Naoki Omiya, Takashi Mori, Satoshi Yamanaka, Kazuya Hirata
  • Publication number: 20180214976
    Abstract: Disclosed herein is a laser processing apparatus for forming a separation layer inside an ingot by applying a laser beam to an end surface of the ingot in the condition where the focal point of the laser beam is set inside the ingot, the laser beam having a transmission wavelength to the ingot. The laser processing apparatus includes a holding unit for holding the ingot, a moving unit for moving the holding unit in a direction parallel to the end surface of the ingot held by the holding unit, a laser beam applying unit for applying the laser beam to the ingot held by the holding unit, an imaging unit for detecting the position of the ingot in the direction parallel to the end surface of the ingot, and a height detecting unit for detecting the height of the end surface of the ingot held by the holding unit.
    Type: Application
    Filed: January 26, 2018
    Publication date: August 2, 2018
    Inventors: Kentaro Iizuka, Koyo Honoki, Shuichi Torii, Yutaka Kobayashi, Ryohei Yamamoto, Kazuya Hirata
  • Patent number: 9381577
    Abstract: A chuck table holds a workpiece having a warp. The chuck table includes a suction holding member having a suction holding surface for holding the workpiece under suction, and an annular seal member provided around the outer circumference of the suction holding member for supporting a peripheral portion of the workpiece. The annular seal member is formed from an elastic member. The upper surface of the annular seal member is set higher in level than the suction holding surface according to the warp of the workpiece. In holding the workpiece on the chuck table under suction, vacuum leaking from the gap between the workpiece and the suction holding surface due to the warp of the workpiece is applied to the space defined by the workpiece and the annular seal member, thereby elastically deforming the annular seal member to flatten the upper surface of the workpiece.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: July 5, 2016
    Assignee: DISCO CORPORATION
    Inventors: Kentaro Iizuka, Masato Terajima
  • Patent number: 9266315
    Abstract: A separating apparatus for separating a composite substrate into a first substrate and a second substrate previously bonded to each other. The separating apparatus includes a support base having a supporting surface for supporting the composite substrate, a pair of side surface supporting rollers for supporting the peripheral side surface of the composite substrate placed on the supporting surface, and a separating unit for applying a separating force to the boundary between the first substrate and the second substrate constituting the composite substrate supported to the supporting surface of the support base and the side surface supporting rollers, thereby separating the composite substrate into the first substrate and the second substrate.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: February 23, 2016
    Assignee: Disco Corporation
    Inventor: Kentaro Iizuka
  • Publication number: 20140196855
    Abstract: A separating apparatus for separating a composite substrate into a first substrate and a second substrate previously bonded to each other. The separating apparatus includes a support base having a supporting surface for supporting the composite substrate, a pair of side surface supporting rollers for supporting the peripheral side surface of the composite substrate placed on the supporting surface, and a separating unit for applying a separating force to the boundary between the first substrate and the second substrate constituting the composite substrate supported to the supporting surface of the support base and the side surface supporting rollers, thereby separating the composite substrate into the first substrate and the second substrate.
    Type: Application
    Filed: December 19, 2013
    Publication date: July 17, 2014
    Applicant: Disco Corporation
    Inventor: Kentaro Iizuka
  • Publication number: 20140091537
    Abstract: A chuck table holds a workpiece having a warp. The chuck table includes a suction holding member having a suction holding surface for holding the workpiece under suction, and an annular seal member provided around the outer circumference of the suction holding member for supporting a peripheral portion of the workpiece. The annular seal member is formed from an elastic member. The upper surface of the annular seal member is set higher in level than the suction holding surface according to the warp of the workpiece. In holding the workpiece on the chuck table under suction, vacuum leaking from the gap between the workpiece and the suction holding surface due to the warp of the workpiece is applied to the space defined by the workpiece and the annular seal member, thereby elastically deforming the annular seal member to flatten the upper surface of the workpiece.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 3, 2014
    Applicant: Disco Corporation
    Inventors: Kentaro Iizuka, Masato Terajima
  • Patent number: 7863160
    Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street and also to form a dividing groove along the blocking groove formed by the first trip blocking groove step while moving the chuck table in a second direction in the processing-feed direction.
    Type: Grant
    Filed: January 23, 2009
    Date of Patent: January 4, 2011
    Assignee: Disco Corporation
    Inventor: Kentaro Iizuka
  • Patent number: 7799700
    Abstract: A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer.
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: September 21, 2010
    Assignee: Disco Corporation
    Inventors: Kentaro Iizuka, Takashi Sampei, Nobuyasu Kitahara, Yohei Yamashita
  • Patent number: 7772092
    Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: August 10, 2010
    Assignee: Disco Corporation
    Inventors: Kentaro Iizuka, Hirokazu Matsumoto, Ryugo Oba
  • Patent number: 7649157
    Abstract: A chuck table for use in a laser beam processing machine, having a workpiece holding area for holding a workpiece, wherein the workpiece holding area is similar in shape to the workpiece and smaller in size than the workpiece, and a buffer groove is formed in such a manner that it surrounds the workpiece holding area.
    Type: Grant
    Filed: March 14, 2005
    Date of Patent: January 19, 2010
    Assignee: Disco Corporation
    Inventor: Kentaro Iizuka
  • Patent number: 7602071
    Abstract: A method of dividing an adhesive film mounted on the back surface of a wafer having a plurality of streets formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of streets, along the streets in a state where the wafer is put on the surface of a protective tape mounted on an annular frame, wherein the adhesive film is cooled and the protective tape is expanded to divide the adhesive film along the peripheries of the function elements.
    Type: Grant
    Filed: July 28, 2005
    Date of Patent: October 13, 2009
    Assignee: Disco Corporation
    Inventors: Naoki Ohmiya, Kentaro Iizuka, Yusuke Nagai
  • Publication number: 20090191692
    Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid
    Type: Application
    Filed: December 19, 2008
    Publication date: July 30, 2009
    Inventors: Kentaro IIzuka, Hirokazu Matsumoto, Ryugo Oba