Patents by Inventor Kentaro Matsunaga

Kentaro Matsunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097152
    Abstract: In an electrochemical device of an embodiment, a cell stack has a spacer disposed to be arranged next to an insulating sealing member in a direction orthogonal to a stack direction. A plurality of the spacers are arranged in the stack direction between a pair of end plates, and the spacer is interposed between a pair of separators adjacently arranged in the stack direction. The spacer is formed of a material whose thickness reduction ratio when an operation of the electrochemical device is executed is smaller than that of the insulating sealing member. Before the execution of the operation of the electrochemical device, the thickness of the spacer is thinner than the thickness of the insulating sealing member. Further, the thickness of the spacer keeps a state of being equal to or less than the thickness of the insulating sealing member when the operation of the electrochemical device is executed.
    Type: Application
    Filed: June 9, 2023
    Publication date: March 21, 2024
    Applicant: TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Riko INUZUKA, Norikazu OSADA, Kentaro MATSUNAGA, Masahiro ASAYAMA, Shohei KOBAYASHI, Yusuke SUZUKI, Tsuneji KAMEDA
  • Publication number: 20240085400
    Abstract: The present invention provides a technology for performing a test for prostate cancer. This method is for testing the possibility of having prostate cancer, the method comprising (1) measuring the amount or concentration of a biomarker in a body fluid sample collected from a subject, the biomarker being at least one member selected from the group consisting of dimethyl glutarate, 2,6-xylidine, 2-hydroxy-2-methylpropiophenone, 2,6-di(propan-2-yl) phenol, dimethyl succinate, acetophenone, 2-phenyl-2-propanol, and 3,5,5-trimetyl-2-cyclohexenone.
    Type: Application
    Filed: December 24, 2021
    Publication date: March 14, 2024
    Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, AINO UNIVERSITY
    Inventors: Atsufumi OZOE, Kentaro KOBAYASHI, Yasuhiko TAKAHASHI, Kohei MATSUNAGA, Takaaki SATO, Yoichi MIZUTANI
  • Publication number: 20230082514
    Abstract: A method of forming a resist pattern includes applying a photoresist to first and second regions of a processing target to form a resist layer. The processing target includes a stacked body of alternately stacked first and second layers. The first region includes an upper surface of the stacked body, and the second region includes a recess extending into the stacked body from the upper surface. The resist layer is then patterned with light passed through a multi-gradation mask including a partial translucent feature at an outer perimeter of the recess, a light shielding feature corresponding in position to the recess, and a translucent feature surrounding the partial translucent feature. A resist pattern is formed including an overhang portion extending above a portion of the recess.
    Type: Application
    Filed: February 28, 2022
    Publication date: March 16, 2023
    Inventors: Satomi ABE, Kentaro MATSUNAGA, Issui AIBA
  • Publication number: 20230050315
    Abstract: A band device according to an aspect of the present disclosure includes a sensor unit, and a band unit that is linked to the sensor unit and forms a hollow part together with the sensor unit. The band unit includes an end piece section to which a watch head section is attached, and an engaging section that makes detachable engagement in a state where the band unit is wrapped around a wrist.
    Type: Application
    Filed: January 15, 2021
    Publication date: February 16, 2023
    Inventors: KENTARO MATSUNAGA, TATSUHITO AONO
  • Patent number: 10903225
    Abstract: A storage device according to embodiments includes a substrate, a stacked body, a first region, a second region, and first to nth electrodes. The stacked body is provided on the substrate and having first to nth (n is an integer of 3 or more) conductive layers stacked in a direction perpendicular to a surface of the substrate. The first region includes a part of the stacked body, and has a first step structure including the first to the nth conductive layers. The second region includes a part of the stacked body, and has a second step structure different from the first step structure including at least a part of the first to nth conductive layers. The first to nth electrodes are provided in the first region and connected to the first to nth conductive layers and extend in a direction perpendicular to the surface of the substrate.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: January 26, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Issui Aiba, Kentaro Matsunaga
  • Publication number: 20200329833
    Abstract: Attachment of more various types of watch heads is realized. A band device includes an annular band portion that forms a hollow portion, and the band portion includes a sensor module and an engaging portion detachably engaged with end pieces to which a watch head is attached.
    Type: Application
    Filed: August 9, 2018
    Publication date: October 22, 2020
    Inventors: KENTARO MATSUNAGA, TATSUHITO AONO
  • Publication number: 20200091243
    Abstract: A storage device according to embodiments includes a substrate, a stacked body, a first region, a second region, and first to nth electrodes. The stacked body is provided on the substrate and having first to nth (n is an integer of 3 or more) conductive layers stacked in a direction perpendicular to a surface of the substrate. The first region includes a part of the stacked body, and has a first step structure including the first to the nth conductive layers. The second region includes a part of the stacked body, and has a second step structure different from the first step structure including at least a part of the first to nth conductive layers. The first to nth electrodes are provided in the first region and connected to the first to nth conductive layers and extend in a direction perpendicular to the surface of the substrate.
    Type: Application
    Filed: December 27, 2018
    Publication date: March 19, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Issui Aiba, Kentaro Matsunaga
  • Patent number: 10503121
    Abstract: There is provided an electronic device including: a first segment and a second segment linked to each other in a rotationally movable manner; a flexible circuit board installed throughout the first segment and the second segment in interiors of the first segment and the second segment; a loosening portion formed by the flexible circuit board being pushed out while being bent in the second segment; and a support unit configured to maintain a direction of pushing-out of the loosening portion to a fixed direction.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: December 10, 2019
    Assignee: SONY CORPORATION
    Inventors: Kentaro Matsunaga, Tatsuhito Aono
  • Publication number: 20180269008
    Abstract: To transfer slurry without a binder smoothly in each transition between a dewatering process, a water squeezing process, and a drying process during formation of the slurry into a sheet-like shape through these processes. A dewatering process unit P1 conveys slurry while removing moisture in the slurry. A water squeezing process unit P2 conveys the resultant slurry while squeezing water from the slurry by rolling the slurry. A drying process unit P3 conveys the resultant slurry while drying the slurry by heating the slurry. The conveyance speed of the slurry in the water squeezing process is lower than the conveyance speed of the slurry in the dewatering process. The conveyance speed of the slurry in the drying process is lower than the conveyance speed of the slurry in the water squeezing process.
    Type: Application
    Filed: March 14, 2018
    Publication date: September 20, 2018
    Inventors: Yusuke Kawaguchi, Toshiaki Shimizu, Toyokazu Kumazawa, Satoshi Oyama, Hiromu Kobori, Keisuke Ota, Shinpei Teshima, Kentaro Matsunaga
  • Patent number: 10068915
    Abstract: According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: September 4, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Satoshi Nagai, Eiji Yoneda, Kentaro Matsunaga, Koutarou Sho
  • Patent number: 10054856
    Abstract: According to one embodiment, there is provided an exposure method. The method includes attaching a thin film sheet thermally shrinkable onto a rear face of a wafer. The method includes heating the wafer provided with the thin film sheet attached thereon, and deforming the wafer into a shape projecting on a front face side of the wafer. The method includes fixing the deformed wafer onto a stage by vacuum suction holding from a rear face side of the wafer. The method includes performing exposure to the fixed wafer.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: August 21, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kentaro Matsunaga, Kazuhiro Segawa
  • Publication number: 20170097610
    Abstract: There is provided an electronic device including: a first segment and a second segment linked to each other in a rotationally movable manner; a flexible circuit board installed throughout the first segment and the second segment in interiors of the first segment and the second segment; a loosening portion formed by the flexible circuit board being pushed out while being bent in the second segment; and a support unit configured to maintain a direction of pushing-out of the loosening portion to a fixed direction.
    Type: Application
    Filed: September 19, 2016
    Publication date: April 6, 2017
    Applicant: SONY MOBILE COMMUNICATIONS INC.
    Inventors: Kentaro MATSUNAGA, Tatsuhito AONO
  • Publication number: 20170092656
    Abstract: According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.
    Type: Application
    Filed: December 12, 2016
    Publication date: March 30, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi NAGAI, Eiji Yoneda, Kentaro Matsunaga, Koutarou Sho
  • Patent number: 9465295
    Abstract: According to one embodiment, first a guide pattern is formed above an object to processing, and then surface modification is performed on the guide pattern. Then a solution including a block copolymer is coated over the object to processing having the guide pattern formed thereon, and the block copolymer is made to phase separate over the object to processing. Subsequently, one component of the phase-separated block copolymer is removed by development. And with the guide pattern coated with other component of the block copolymer as a mask, the object to processing is patterned.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: October 11, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kentaro Matsunaga, Masashi Terao, Eiji Yoneda
  • Publication number: 20160260731
    Abstract: According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.
    Type: Application
    Filed: June 24, 2015
    Publication date: September 8, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi NAGAI, Eiji YONEDA, Kentaro MATSUNAGA, Koutarou SHO
  • Publication number: 20160240423
    Abstract: According to one embodiment, there is provided an exposure method. The method includes attaching a thin film sheet thermally shrinkable onto a rear face of a wafer. The method includes heating the wafer provided with the thin film sheet attached thereon, and deforming the wafer into a shape projecting on a front face side of the wafer. The method includes fixing the deformed wafer onto a stage by vacuum suction holding from a rear face side of the wafer. The method includes performing exposure to the fixed wafer.
    Type: Application
    Filed: April 22, 2015
    Publication date: August 18, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kentaro MATSUNAGA, Kazuhiro SEGAWA
  • Patent number: 9362576
    Abstract: In one embodiment, an electrical power storage system using hydrogen includes a power generation unit generating power using hydrogen and oxidant gas and an electrolysis unit electrolyzing steam. The electrical power storage system includes a hydrogen storage unit storing hydrogen generated by the electrolysis and supplying the hydrogen to the power generation unit during power generation, a high-temperature heat storage unit storing high temperature heat generated accompanying the power generation and supplying the heat to the electrolysis unit during the electrolysis, and a low-temperature heat storage unit storing low-temperature heat, which is exchanged in the high-temperature heat storage unit and generating with this heat the steam supplied to the electrolysis unit.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: June 7, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shoko Suyama, Yoshiyasu Ito, Shigeo Kasai, Yasuo Takagi, Tsuneji Kameda, Kentaro Matsunaga, Masato Yoshino, Daisuke Horikawa, Kazuya Yamada
  • Patent number: 9349585
    Abstract: According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: May 24, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Sonoe Nakaoka, Kentaro Matsunaga, Eiji Yoneda
  • Patent number: 9335642
    Abstract: According to one embodiment, an EUV exposure apparatus includes a mirror which reflects an EUV light beam irradiated from a light source and a wafer stage which is irradiated with the EUV light beam reflected by the mirror. When exposure of a first wafer is to be performed, the first wafer is mounted on the wafer stage, and the wafer stage allows the first wafer to be irradiated with the EUV light beam. In addition, when cleaning of the mirror is to be performed, the EUV light beam is reflected by a reflection substrate, and the wafer stage allows the mirror to be irradiated with the reflected light beam.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: May 10, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Kentaro Matsunaga
  • Patent number: 9306221
    Abstract: A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Fukasawa, Keizo Shimamura, Yoshio Hanakata, Masato Yoshino, Kentaro Matsunaga, Tsuneji Kameda, Yoshiyasu Itoh