Patents by Inventor Kenzo Hanawa

Kenzo Hanawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180034066
    Abstract: A redox flow electrode according to one aspect of the present invention is a redox flow battery electrode disposed between an ion exchange membrane and a bipolar plate, wherein the electrode includes a conductive sheet containing carbon nanotubes having an average fiber diameter of 1 ?m or less, and a porous sheet that is laminated to the conductive sheet and is formed from fibers having an average fiber diameter of greater than 1 ?m.
    Type: Application
    Filed: December 24, 2015
    Publication date: February 1, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Keizo ISEKI, Masatoshi ICHIKAWA, Gaku ORIJI, Kenzo HANAWA
  • Publication number: 20170263277
    Abstract: According to the present invention, there is provided a recording medium comprising a substrate, a platinum layer formed on the substrate and having a (111) plane preferentially oriented, and a fullerene single crystal thin film formed on the platinum layer, and configured to be a recording layer, wherein an average value of average surface roughness Ra's with respect to four or more visual fields measured by using an atomic force microscope in a surface of the fullerene thin film is 0.5 nm or less.
    Type: Application
    Filed: June 28, 2016
    Publication date: September 14, 2017
    Applicant: SHOWA DENKO K.K.
    Inventors: Sho TONEGAWA, Masatoshi ICHIKAWA, Kenzo HANAWA
  • Patent number: 9672857
    Abstract: A lubricant for a magnetic recording medium of the present invention includes an organic compound having a fullerene skeleton, and the organic compound having the fullerene skeleton is expressed by the following general formula (i).
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: June 6, 2017
    Assignee: SHOWA DENKO K.K.
    Inventors: Kenzo Hanawa, Tsubasa Okada
  • Publication number: 20160293970
    Abstract: A redox flow battery includes: first carbon nanotubes having an average diameter of 100 nm or r core, and second carbon nanotubes having an average diameter of 30 nm or less, in which the second carbon nanotubes are adhered to surfaces of the first carbon nanotubes such that the second carbon nanotubes bridge between the plural first carbon nanotubes. Since the redox flow battery includes an electrode material and an electrode including the electrode material, the electromotive force and the charging capacity are high.
    Type: Application
    Filed: November 11, 2014
    Publication date: October 6, 2016
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo HANAWA, Ryuji MONDEN, Takenori NISHIKATA
  • Patent number: 9349403
    Abstract: A lubricant for a magnetic recording medium of the present invention includes an organic compound having a fullerene skeleton, and the organic compound having the fullerene skeleton is expressed by the general formula (i), and at least one hydroxyl group on a terminal of the organic compound having the fullerene skeleton is substituted by any one of hydrogen, a methyl group, and a trifluoro methyl group, in which A is a group in which any one hydroxyl group on a terminal of a fluoro compound is not included, and R1 is an organic group having 1 to 24 carbon atoms.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: May 24, 2016
    Assignee: SHOWA DENKO K.K.
    Inventors: Kenzo Hanawa, Tsubasa Okada
  • Publication number: 20150199988
    Abstract: A lubricant for a magnetic recording medium of the present invention includes an organic compound having a fullerene skeleton, and the organic compound having the fullerene skeleton is expressed by the general formula (i), and at least one hydroxyl group on a terminal of the organic compound having the fullerene skeleton is substituted by any one of hydrogen, a methyl group, and a trifluoro methyl group, in which A is a group in which any one hydroxyl group on a terminal of a fluoro compound is not included, and R1 is an organic group having 1 to 24 carbon atoms.
    Type: Application
    Filed: December 3, 2014
    Publication date: July 16, 2015
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo HANAWA, Tsubasa OKADA
  • Publication number: 20150162044
    Abstract: A lubricant for a magnetic recording medium of the present invention includes an organic compound having a fullerene skeleton, and the organic compound having the fullerene skeleton is expressed by the following general formula (i).
    Type: Application
    Filed: December 2, 2014
    Publication date: June 11, 2015
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo HANAWA, Tsubasa OKADA
  • Patent number: 8882971
    Abstract: A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: November 11, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasunori Yokoyama, Yasumasa Sasaki
  • Patent number: 8802187
    Abstract: The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: August 12, 2014
    Assignee: Showa Denko K.K.
    Inventors: Yoshiaki Ikenoue, Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki, Hitoshi Yokouchi, Ryoko Konta, Hiroaki Kaji
  • Patent number: 8669129
    Abstract: One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0?x<1) is formed on the pretreated substrate (11) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer (14a)
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: March 11, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hisayuki Miki, Yasunori Yokoyama, Takehiko Okabe, Kenzo Hanawa
  • Patent number: 8557092
    Abstract: A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: October 15, 2013
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Patent number: 8471266
    Abstract: According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: June 25, 2013
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Kenzo Hanawa, Yasumasa Sasaki
  • Patent number: 8445302
    Abstract: One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0?x<1) is formed on the pretreated substrate (11) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer (14a)
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: May 21, 2013
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hisayuki Miki, Yasunori Yokoyama, Takehiko Okabe, Kenzo Hanawa
  • Patent number: 8389313
    Abstract: The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from the substrate side, and the buffer layer and the underlying layer are formed by a sputtering method. A deposition temperature of the buffer layer is adjusted to a temperature lower than a deposition temperature of the underlying layer, or the thickness of the buffer layer is adjusted to 5 nm to 500 nm. Furthermore, the multilayered structure comprises at least an underlying layer and a light-emissive layer from the substrate side and the underlying layer is formed by a sputtering method, and the method comprises the step of forming the light-emissive layer by a metal-organic chemical vapor deposition (MOCVD method).
    Type: Grant
    Filed: September 13, 2007
    Date of Patent: March 5, 2013
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Patent number: 8378369
    Abstract: A light emitting unit (60) is provided with a resin container (61) in which a recessed portion (61a) is formed, an anode lead portion (62) and a cathode lead portion (63) which are provided so as to be exposed on the bottom surface of the recessed portion (61a), a semiconductor light emitting element (64) attached to the cathode lead portion (63) on the bottom surface (70) of the recessed portion (61a), and a sealing resin (65) provided so as to cover the recessed portion (61a). The resin container (61) is produced from a white resin containing titania as a coloring agent. The anode lead portion (62) and the cathode lead portion (63) are each configured by forming a silver-plated layer with the gloss level set in the range of 0.3-1.0 inclusive on a metal plate based on a copper alloy or the like. Thus, the efficiency of extraction of light outputted from the light emitting unit is improved.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: February 19, 2013
    Assignee: Showa Denko K.K.
    Inventors: Kenzo Hanawa, Takaharu Hoshina, Tomoyuki Takei
  • Patent number: 8309982
    Abstract: Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.
    Type: Grant
    Filed: June 11, 2009
    Date of Patent: November 13, 2012
    Assignee: Showa Denko K.K.
    Inventors: Kenzo Hanawa, Hiromitsu Sakai, Yasumasa Sasaki
  • Publication number: 20120248457
    Abstract: According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
    Type: Application
    Filed: June 11, 2012
    Publication date: October 4, 2012
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo HANAWA, Yasumasa SASAKI
  • Patent number: 8227284
    Abstract: The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.
    Type: Grant
    Filed: August 15, 2007
    Date of Patent: July 24, 2012
    Assignee: Showa Denko K.K.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Patent number: 8211727
    Abstract: According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: July 3, 2012
    Assignee: Showa Denko K.K.
    Inventors: Kenzo Hanawa, Yasumasa Sasaki
  • Patent number: 8168460
    Abstract: A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: May 1, 2012
    Assignee: Showa Denko K.K.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki