Patents by Inventor Keon Hwa LEE
Keon Hwa LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240128714Abstract: Disclosed are a VCSEL diode and a VCSEL diode array having a common anode structure. An aspect of the present disclosure provides the VCSEL diode and the VCSEL diode array, which smoothly perform an operation and improve the quality of output light because the VCSEL diode and the VCSEL diode array have a common anode structure.Type: ApplicationFiled: October 12, 2023Publication date: April 18, 2024Applicant: Korea Photonics Technology InstituteInventor: Keon Hwa LEE
-
Publication number: 20240063608Abstract: Disclosed are a micro VCSEL with improved beam quality and a micro VCSEL array. An embodiment of the present invention provides a micro VCSEL with improved beam quality of light or laser to be oscillated and a micro VCSEL array capable of improving manufacturing efficiency and minimizing efficiency degradation due to errors occurring during a transfer.Type: ApplicationFiled: August 11, 2023Publication date: February 22, 2024Applicant: Korea Photonics Technology InstituteInventors: Keon Hwa LEE, Young Hee CHOI
-
Publication number: 20230396039Abstract: A vertical cavity surface emitting laser (VCSEL) chip, a VCSEL array, and a method of manufacturing the VCSEL array are disclosed. The VCSEL array includes a substrate, an adhesive layer coated on the substrate, a VCSEL chip disposed on the adhesive layer and fixed to the adhesive layer and configured to oscillate light or a laser by being supplied with power, a polymer coated on the VCSEL chip and the adhesive layer, and an interconnector electrically connected to the VCSEL chip.Type: ApplicationFiled: August 17, 2023Publication date: December 7, 2023Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Keon Hwa LEE, Young Ho SONG
-
Patent number: 11637227Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer.Type: GrantFiled: January 25, 2018Date of Patent: April 25, 2023Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Keon Hwa Lee, Su Ik Park, Yong Gyeong Lee, Baek Jun Kim, Myung Sub Kim
-
Patent number: 11257998Abstract: A semiconductor element package includes: a semiconductor element arranged above a first substrate; first and second electrodes arranged above the first substrate and electrically connected to the semiconductor element; a housing which is arranged above the first substrate and arranged around the semiconductor element, and which has a stepped portion in the upper area thereof; a diffusion part arranged on the stepped portion of the housing and arranged above the semiconductor element; and a plurality of via holes penetrating the first substrate and the housing.Type: GrantFiled: March 21, 2018Date of Patent: February 22, 2022Assignee: LG INNOTEK CO., LTD.Inventors: Keon Hwa Lee, Do Yub Kim, Myung Sub Kim, Baek Jun Kim
-
Patent number: 10998694Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.Type: GrantFiled: May 18, 2018Date of Patent: May 4, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Su Ik Park, Keon Hwa Lee, Yong Gyeong Lee
-
Publication number: 20210104648Abstract: A semiconductor element package includes: a semiconductor element arranged above a first substrate; first and second electrodes arranged above the first substrate and electrically connected to the semiconductor element; a housing which is arranged above the first substrate and arranged around the semiconductor element, and which has a stepped portion in the upper area thereof; a diffusion part arranged on the stepped portion of the housing and arranged above the semiconductor element; and a plurality of via holes penetrating the first substrate and the housing.Type: ApplicationFiled: March 21, 2018Publication date: April 8, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Keon Hwa Lee, Do Yub Kim, Myung Sub Kim, Baek Jun Kim
-
Patent number: 10910790Abstract: Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material.Type: GrantFiled: December 13, 2017Date of Patent: February 2, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Baek Jun Kim, Ho Jae Kang, Hui Seong Kang, Keon Hwa Lee, Yong Gyeong Lee
-
Publication number: 20200194970Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.Type: ApplicationFiled: May 18, 2018Publication date: June 18, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Su Ik PARK, Keon Hwa LEE, Yong Gyeong LEE
-
Publication number: 20200083670Abstract: Embodiments relate to a semiconductor device, an optical transmission module, and an optical transmission apparatus. An optical transmission module according to an embodiment includes a board; a submount disposed on a first surface of the board; a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a first surface of the submount; and a module housing including a coupling unit and a body, the coupling unit spaced apart from the vertical cavity surface emitting laser (VCSEL) semiconductor device and facing the first surface of the submount, the body extending from the coupling unit toward the first surface of the board and disposed around the submount and the vertical cavity surface emitting laser (VCSEL) semiconductor device.Type: ApplicationFiled: December 13, 2017Publication date: March 12, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Baek Jun KIM, Ho Jae KANG, Keon Hwa LEE, Yong Gyeong LEE
-
Patent number: 10586828Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.Type: GrantFiled: December 30, 2015Date of Patent: March 10, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Su Hyoung Son, Keon Hwa Lee, Byeong Kyun Choi, Kwang Ki Choi
-
Publication number: 20200036161Abstract: Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material.Type: ApplicationFiled: December 13, 2017Publication date: January 30, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Baek Jun KIM, Ho Jae KANG, Hui Seong KANG, Keon Hwa LEE, Yong Gyeong LEE
-
Publication number: 20190386189Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer.Type: ApplicationFiled: January 25, 2018Publication date: December 19, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Keon Hwa LEE, Su Ik PARK, Yong Gyeong LEE, Baek Jun KIM, Myung Sub KIM
-
Patent number: 10186640Abstract: Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.Type: GrantFiled: December 24, 2015Date of Patent: January 22, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Keon Hwa Lee, Byeong Kyun Choi
-
Patent number: 10062811Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between theType: GrantFiled: November 27, 2015Date of Patent: August 28, 2018Assignee: LG Innotek Co., Ltd.Inventors: Keon Hwa Lee, Su Hyoung Son
-
Patent number: 10038119Abstract: The embodiment relates to a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. According to the embodiment, a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first electrode electrically connected with the first conductive semiconductor layer, a second electrode electrically connected with the second conductive semiconductor layer, an insulating member provided on the light emitting structure while exposing the first electrode and the second electrode, a third electrode provided on the first electrode, and a fourth electrode provided on the second electrode.Type: GrantFiled: December 24, 2015Date of Patent: July 31, 2018Assignee: LG INNOTEK CO., LTD.Inventor: Keon Hwa Lee
-
Publication number: 20180090539Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.Type: ApplicationFiled: December 30, 2015Publication date: March 29, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Su Hyoung SON, Keon Hwa LEE, Byeong Kyun CHOI, Kwang Ki CHOI
-
Publication number: 20170365744Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between theType: ApplicationFiled: November 27, 2015Publication date: December 21, 2017Inventors: Keon Hwa LEE, Su Hyoung SON
-
Publication number: 20170352785Abstract: The embodiment relates to a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. According to the embodiment, a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first electrode electrically connected with the first conductive semiconductor layer, a second electrode electrically connected with the second conductive semiconductor layer, an insulating member provided on the light emitting structure while exposing the first electrode and the second electrode, a third electrode provided on the first electrode, and a fourth electrode provided on the second electrode.Type: ApplicationFiled: December 24, 2015Publication date: December 7, 2017Applicant: LG INNOTEK CO., LTD.Inventor: Keon Hwa LEE
-
Publication number: 20170338380Abstract: Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.Type: ApplicationFiled: December 24, 2015Publication date: November 23, 2017Inventors: Keon Hwa LEE, Byeong Kyun CHOI