Patents by Inventor Keon Jae Lee

Keon Jae Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8822970
    Abstract: Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: September 2, 2014
    Assignee: Korea Advanced Institute of Science and Technology (KAIST)
    Inventors: Yeon Sik Jung, Keon Jae Lee, Jae Won Jeong, Jae Suk Choi, Geon Tae Hwang, Beom Ho Mun, Byoung Kuk You, Seung Jun Kim
  • Patent number: 8808860
    Abstract: The present invention relates to a 3-dimensional nanostructure having nanomaterials stacked on a graphene substrate; and more specifically, to a 3-dimensional nanostructure having at least one nanomaterial selected from nanotubes, nanowires, nanorods, nanoneedles and nanoparticles grown on a reduced graphene substrate. The present invention enables the achievement of a synergy effect of the 3-dimensional nanostructure hybridizing 1-dimensional nanomaterials and 2-dimensional graphene. The nanostructure according to the present invention is excellent in flexibility and elasticity, and can easily be transferred to any substrate having a non-planar surface. Also, all junctions in nanomaterials, a metal catalyst and a graphene film system form the ohmic electrical contact, which allows the nanostructure to easily be incorporated into a field-emitting device.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: August 19, 2014
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Sang Ouk Kim, Won Jong Lee, Duck Hyun Lee, Tae Hee Han, Ji Eun Kim, Jin Ah Lee, Keon Jae Lee
  • Patent number: 8803406
    Abstract: There are provided a flexible nanocomposite generator and a method of manufacturing the same. A flexible nanocomposite generator according to the present invention includes a piezoelectric layer formed of a flexible matrix containing piezoelectric nanoparticles and carbon nanostructures; and electrode layers disposed on the upper and lower surfaces of both sides of the piezoelectric layer, in which according to a method for manufacturing a flexible nanocomposite generator according to the present invention and a flexible nanogenerator, it is possible to manufacture a flexible nanogenerator with a large area and a small thickness. Therefore, the nanogenerator may be used as a portion of a fiber or cloth. Accordingly, the nanogenerator according to the present invention generates power in accordance with bending of attached cloth, such that it is possible to continuously generate power in accordance with movement of a human body.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: August 12, 2014
    Assignee: KAIST (Korea Advanced Institute of Science and Technology)
    Inventors: Keon Jae Lee, Kwi-Il Park, Do Kyung Kim, Sang Ouk Kim, Geon-Tae Hwang
  • Publication number: 20140191236
    Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
    Type: Application
    Filed: January 14, 2014
    Publication date: July 10, 2014
    Applicant: The Board of Trustees of the University of IIIinois
    Inventors: Ralph G. NUZZO, John A. ROGERS, Etienne MENARD, Keon Jae LEE, Dahl-Young KHANG, Yugang SUN, Matthew MEITL, Zhengtao ZHU
  • Publication number: 20140147957
    Abstract: Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacrificial substrate, contacting the solar cell devices to a stamping processor to remove the solar cell devices from the sacrificial substrate, and transferring the solar cell devices onto a receiving substrate. A high temperature semiconductor process may be performed on a substrate such as a silicon substrate to transfer the solar cell devices onto the substrate, thereby manufacturing flexible solar cells. Also, a large number of solar cells may be excellently aligned on a large area. In addition, economical solar cells may be manufactured.
    Type: Application
    Filed: January 30, 2014
    Publication date: May 29, 2014
    Applicants: Korea Advanced Institute of Science, L G Siltron Inc.
    Inventors: Keon Jae Lee, Sang Yong Lee, Seung Jun Kim
  • Patent number: 8664699
    Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 4, 2014
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Ralph G. Nuzzo, John A. Rogers, Etienne Menard, Keon Jae Lee, Dahl-Young Khang, Yugang Sun, Matthew Meitl, Zhengtao Zhu
  • Patent number: 8661634
    Abstract: A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: March 4, 2014
    Assignee: KAIST (Korea Advanced Institute of Science and Technology
    Inventors: Keon Jae Lee, Suk Joong L. Kang, Jaemyung Chang, Kwi-il Park, Seungjun Kim, Sang Yong Lee
  • Patent number: 8557619
    Abstract: A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the LED device. The method contacts a stamping processor to the RGB LED devices to separate the RGB LED devices from the sacrificial substrate. The method transfers the LED device, which is attached to the stamping processor, to a receiving substrate.
    Type: Grant
    Filed: August 7, 2010
    Date of Patent: October 15, 2013
    Assignee: Siltron Inc.
    Inventors: Keon Jae Lee, Sang Yong Lee, Seung Jun Kim
  • Patent number: 8482041
    Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: July 9, 2013
    Assignee: Unisantis Electronics Singapore Pte Ltd.
    Inventors: Fujio Masuoka, Keon Jae Lee
  • Patent number: 8440546
    Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
    Type: Grant
    Filed: May 23, 2011
    Date of Patent: May 14, 2013
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Ralph G. Nuzzo, John A. Rogers, Etienne Menard, Keon Jae Lee, Dahl-Young Khang, Yugang Sun, Matthew Meitl, Zhengtao Zhu
  • Publication number: 20130082361
    Abstract: Provided are a method of manufacturing a flexible device and a flexible device manufactured thereby. The method of manufacturing a flexible device according to the present disclosure includes: fabricating a device on an upper silicon layer of a silicon-on-insulator (SOI) substrate comprising a lower silicon layer, an insulation layer and the upper silicon layer stacked sequentially; adhering a second silicon substrate to the upper silicon layer; removing the lower silicon layer; transferring the upper silicon layer with the device fabricated to a flexible substrate using the second silicon substrate; and stacking a passivation layer on the flexible substrate, wherein the device is located at a position of a neutral mechanical plane of the entire device as the passivation layer is stacked.
    Type: Application
    Filed: February 14, 2012
    Publication date: April 4, 2013
    Inventors: Keon Jae LEE, Kwyro Lee, Geon Tae Hwang, Donggu Im
  • Patent number: 8394706
    Abstract: The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: March 12, 2013
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Ralph G. Nuzzo, John A. Rogers, Etienne Menard, Keon Jae Lee, Dahl-Young Khang, Yugang Sun, Matthew Meitl, Zhengtao Zhu, Heung Cho Ko, Shawn Mack
  • Publication number: 20130001502
    Abstract: Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.
    Type: Application
    Filed: February 21, 2012
    Publication date: January 3, 2013
    Inventors: Yeon Sik JUNG, Keon Jae Lee, Jae Won Jeong, Jae Suk Choi, Geon Tae Hwang, Beom Ho Mun, Byoung Kuk You, Seung Jun Kim
  • Publication number: 20120295376
    Abstract: Disclosed are a method for fabricating a GaN LED array device for optogenetics and a GaN LED array device fabricated thereby.
    Type: Application
    Filed: May 16, 2012
    Publication date: November 22, 2012
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Keon Jae LEE, So Young PARK, Seung Hyun LEE, Kwi Il PARK, Min KOO
  • Patent number: 8217381
    Abstract: In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: July 10, 2012
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: John A. Rogers, Matthew Meitl, Yugang Sun, Heung Cho Ko, Andrew Carlson, Won Mook Choi, Mark Stoykovich, Hanqing Jiang, Yonggang Huang, Ralph G. Nuzzo, Keon Jae Lee, Zhengtao Zhu, Etienne Menard, Dahl-Young Khang, Seong Jun Kang, Jong Hyun Ahn, Hoon-sik Kim
  • Publication number: 20120171825
    Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.
    Type: Application
    Filed: March 6, 2012
    Publication date: July 5, 2012
    Inventors: Fujio Masuoka, Keon Jae LEE
  • Publication number: 20120133247
    Abstract: There are provided a flexible nanocomposite generator and a method of manufacturing the same. A flexible nanocomposite generator according to the present invention includes a piezoelectric layer formed of a flexible matrix containing piezoelectric nanoparticles and carbon nanostructures; and electrode layers disposed on the upper and lower surfaces of both sides of the piezoelectric layer, in which according to a method for manufacturing a flexible nanocomposite generator according to the present invention and a flexible nanogenerator, it is possible to manufacture a flexible nanogenerator with a large area and a small thickness. Therefore, the nanogenerator may be used as a portion of a fiber or cloth. Accordingly, the nanogenerator according to the present invention generates power in accordance with bending of attached cloth, such that it is possible to continuously generate power in accordance with movement of a human body.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 31, 2012
    Inventors: Keon Jae Lee, Kwi-Il Park, Do Kyung Kim, Sang Ouk Kim, Geon-Tae Hwang
  • Patent number: 8183628
    Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: May 22, 2012
    Assignee: Unisantis Electronics Singapore Pte Ltd.
    Inventors: Fujio Masuoka, Keon Jae Lee
  • Publication number: 20120121891
    Abstract: The present invention relates to a 3-dimensional nanostructure having nanomaterials stacked on a graphene substrate; and more specifically, to a 3-dimensional nanostructure having at least one nanomaterial selected from nanotubes, nanowires, nanorods, nanoneedles and nanoparticles grown on a reduced graphene substrate. The present invention enables the achievement of a synergy effect of the 3-dimensional nanostructure hybridizing 1-dimensional nanomaterials and 2-dimensional graphene. The nanostructure according to the present invention is excellent in flexibility and elasticity, and can easily be transferred to any substrate having a non-planar surface. Also, all junctions in nanomaterials, a metal catalyst and a graphene film system form the ohmic electrical contact, which allows the nanostructure to easily be incorporated into a field-emitting device.
    Type: Application
    Filed: September 20, 2010
    Publication date: May 17, 2012
    Inventors: Sang Ouk Kim, Won Jong Lee, Duck Hyun Lee, Tae Hee Han, Ji Eun Kim, Jin Ah Lee, Keon Jae Lee
  • Publication number: 20120115259
    Abstract: Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating a device such as a secondary battery fabricated on a sacrificial substrate using laser, and an electronic device fabricated thereby.
    Type: Application
    Filed: November 9, 2011
    Publication date: May 10, 2012
    Inventors: Keon Jae LEE, Min Koo, Geon Tae Hwang