Patents by Inventor Kerstin Volz
Kerstin Volz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200328358Abstract: The invention concerns a highly efficient molecular white-light emitter. The invention describes amorphous materials that emit a broadband spectrum of light upon irradiation with an infrared laser. Inorganic nanocrystals form the core of the material and are coated with organic ligands on the surface.Type: ApplicationFiled: June 1, 2017Publication date: October 15, 2020Inventors: Andreas Beyer, Sangam Chatterjee, Stefanie Dehnen, Jens Eussner, Nils W. Rosemann, Kerstin Volz
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Patent number: 10269562Abstract: The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E?R3R4 (I) or R5E(E?R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E? are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.Type: GrantFiled: September 25, 2015Date of Patent: April 23, 2019Assignee: PHILIPPS-UNIVERSITÄT MARBURGInventors: Carsten Von Haenisch, Kerstin Volz, Wolfgang Stolz, Eduard Sterzer, Andreas Beyer, Dominik Keiper, Benjamin Ringler
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Publication number: 20170243740Abstract: The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E?R3R4 (I) or R5E(E?R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E? are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.Type: ApplicationFiled: September 25, 2015Publication date: August 24, 2017Applicant: Philipps-Universität MarburgInventors: Carsten VON HAENISCH, Kerstin VOLZ, Wolfgang STOLZ, Eduard STERZER, Andreas BEYER, Dominik KEIPER, Benjamin RINGLER
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Patent number: 8421055Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.Type: GrantFiled: May 26, 2009Date of Patent: April 16, 2013Assignee: Philipps-University MarburgInventors: Bernardette Kunert, Jorg Koch, Stefan Reinhard, Kerstin Volz, Wolfgang Stolz
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Publication number: 20100102293Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.Type: ApplicationFiled: May 26, 2009Publication date: April 29, 2010Inventors: BERNARDETTE KUNERT, JORG KOCH, STEFAN REINHARD, KERSTIN VOLZ, WOLFGANG STOLZ
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Patent number: 7442407Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR?R? (hydrazido(-1), wherein R, R? and R? have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.Type: GrantFiled: July 7, 2006Date of Patent: October 28, 2008Assignee: H.C. Starck GmbHInventors: Knud Reuter, Jörg Sundermeyer, Alexei Merkoulov, Wolfgang Stolz, Kerstin Volz, Michael Pokoj, Thomas Ochs
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Publication number: 20080038466Abstract: The present invention relates to special, novel tantalum and niobium compounds, the use thereof for the deposition of tantalum- or niobium-containing layers by means of chemical vapour deposition and the tantalum- or niobium-containing layers produced by this process.Type: ApplicationFiled: August 9, 2007Publication date: February 14, 2008Applicant: H. C. Starck GmbHInventors: Knud Reuter, Stephan Kirchmeyer, Daniel Gaess, Michael Pokoj, Jorg Sundermeyer, Wolfgang Stolz, Thomas Ochs, Kerstin Volz
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Publication number: 20070042213Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R?C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5?optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR?R? (hydrazido(?1), wherein R, R? and R? hType: ApplicationFiled: July 7, 2006Publication date: February 22, 2007Applicant: H.C. STARCKInventors: Knud Reuter, Jorg Sundermeyer, Alexei Merkoulov, Wolfgang Stolz, Kerstin Volz, Michael Pokoj, Thomas Ochs
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Publication number: 20070012908Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.Type: ApplicationFiled: January 26, 2006Publication date: January 18, 2007Inventors: Bernardette Kunert, Jorg Koch, Stefan Reinhard, Kerstin Volz, Wolfgang Stolz