Abstract: An embedded assembly (200) and method for fabricating the same is provided. The embedded assembly includes an organic substrate (102) and at least one movable element (104). The embedded assembly also includes at least one antenna element (106). The method includes providing (502) the organic substrate, and embedding (504) the at least one moveable element on the organic substrate. The method also includes embedding (506) the at least one antenna element on the organic substrate.

Abstract: An embedded assembly (200) and method for fabricating the same is provided. The embedded assembly includes an organic substrate (102) and at least one movable element (104). The embedded assembly also includes at least one antenna element (106). The method includes providing (502) the organic substrate, and embedding (504) the at least one moveable element on the organic substrate. The method also includes embedding (506) the at least one antenna element on the organic substrate.

Abstract: An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.

Abstract: A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Abstract: An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.

Abstract: A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.

Abstract: A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.

Abstract: An article comprised of a material that can be wetted by electrolyte solutions contains indicator substances sensitive to acid, caustic and or salt solutes that are present in said electrolyte solutions: said articles are employed as whole or partial encapsulation for devices, especially electrochemical cells, and thereby provide an enhanced alerting function for electrolyte leaks and spills.

Abstract: A method for making high power electrochemical charge storage devices, provides for depositing an electrically conducting polymer (16), (18), onto a non-noble metal substrate (10), which has been prepared by treatment with a surfactant. Using this method, high power, high energy electrochemical charge storage devices may be fabricated with highly reproducible low cost.

Abstract: An electrochemical battery cell (10) including a zinc electrode (20), and may be fabricated with an electrolyte (50) system including an electrolyte active species and a modifier. The electrolyte active species is typically a metal hydroxide such as KOH or NaOH, while the modifier may be a porphine such as a metal porphine, and/or a polymeric material. The polymeric material may be, for example, a polyvinyl resin such as polyvinyl alcohol or polyvinyl acetate. The resulting electrolyte typically includes between 3 and 10 weight percent of the polyvinyl resin, 5 and 50 weight percent of the metal hydroxide, and between 1 PPM and 1 wt % of the modifier. Employing such an electrolyte in a cell including a zinc electrode results in an energy storage device having improved power density and substantially longer cycle life.

Abstract: An electrochemical cell is provided with first (10) and second (11) electrodes and a solid polymer electrolyte (15) disposed therebetween. The electrodes include a current collecting layer, a layer of electrode active material, and a layer of an electrically conductive, polymeric protection material disposed therebetween. The protective layer protects, for example, the current collecting layer from the deleterious effects of the acid or alkaline electrolyte active species found in most electrochemical cells. The protective layer is formed of an intermetallic compound dispersed through a layer of appropriately chosen polymeric material.

Abstract: An electrochemical cell is provided with first (10) and second (11) electrodes and a solid polymer electrolyte (15) disposed therebetween. The solid polymer electrolyte is preferably fabricated by providing a linear powdered polymeric precursor material which is thereafter heated to temperatures sufficient to drive off moisture and in the presence of an electrolyte active species. The electrolyte active species is preferably an acidic electrolyte active species which has the effect of protonating the powdered polymeric precursor material. Electrochemical cells fabricated using these devices demonstrate performance characteristics far better than those available in the prior art.

Abstract: A hybrid electrode for a high power, high energy, electrical storage device contains both a high-energy electrode material (42) and a high-rate electrode material (44). The two materials are deposited on a current collector (40), and the electrode is used to make an energy storage device that exhibits both the high-rate capability of a capacitor and the high energy capability of a battery. The two materials can be co-deposited on the current collector in a variety of ways, either in superimposed layers, adjacent layers, intermixed with each other or one material coating the other to form a mixture that is then deposited on the current collector.

Abstract: An electrochemical cell is provided with a first and second electrode assemblies (10) (11), and an electrolyte (15) disposed therebetween. The electrodes may either be of the same or different materials and may be fabricated from ruthenium, iridium, cobalt, tungsten, vanadium, iron, molybdenum, nickel, silver, zinc, and combinations thereof. The electrode assemblies are fabricated by depositing a layer (16) of a conductive ink adhesive on a surface of a current collecting substrate (12). Thereafter, a layer of powdered active material (18) is impregnated onto the surface of the conductive ink layer.

Abstract: Electrodes for electrochemical capacitor are modified with a metal macrocyclic complex made up of phthalocyanine or porphyrin ligands bound to a transition metal to achieve improved conductivity, reversibility, and charge storage capacity. The electrode is formed from a metal base and coated with an oxide, nitride or carbide of a transition metal or with a conductive polymer. This coating is modified with the metal macrocyclic complex. Suitable metal macrocyclic complexes are iron phthalocyanine (FePc), iron meso-tetra(N-methyl-4-phenyl)porphyrin (FeTPP) or cobalt protoporphyrin (CoPP).

Abstract: An electrolyte for an electrochemical cell is provided. The electrolyte is an admixture of H.sub.3 PO.sub.4 and a high temperature polymer such as poly(benzimidazole) in ratios between 2:1 and 50:1, Fumed silica is added to the electrolyte at levels between 0.2% and 8% by weight. An electrochemical cell is fabricated using the electrolyte, and exhibits improved adhesion between the electrolyte and the electrode.