Patents by Inventor Keun-hee Bai

Keun-hee Bai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050282363
    Abstract: There are provided a method of forming a fine pattern of a semiconductor device using a silicon germanium sacrificial layer, and a method of forming a self-aligned contact using the same. The method of forming a self-aligned contact of a semiconductor device includes forming a conductive line structure having a conductive material layer, a hard mask layer, and a sidewall spacer on a substrate, and forming a silicon germanium (Si1-xGex) sacrificial layer, which has a height equal to or higher than a height of at least the conductive line structure, on an entire surface of the substrate. Then, a photoresist pattern for defining a contact hole is formed on the sacrificial layer, and the sacrificial layer is dry-etched, thereby forming a contact hole for exposing the substrate. A plurality of contacts for filling the contact hole are formed using polysilicon, and the remained sacrificial layer is wet-etched.
    Type: Application
    Filed: June 21, 2005
    Publication date: December 22, 2005
    Inventors: Keun-Hee Bai, Kyeong-Koo Chi, Chang-Jin Kang, Cheol-Kyu Lee
  • Publication number: 20050003310
    Abstract: An etching process including plasma pretreatment for generating a polymer layer formed of carbon on a photoresist pattern. The photoresist pattern is treated with plasma that does not contain fluorine radicals and that provides carbon radicals. An etching process is performed on an etching target layer by using the photoresist pattern as an etch mask.
    Type: Application
    Filed: March 17, 2004
    Publication date: January 6, 2005
    Inventors: Keun-Hee Bai, Chang-Jin Kang, Kyeong-Koo Chi, Myeong-Cheol Kim