Patents by Inventor Kevin W. Haberern

Kevin W. Haberern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10957830
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: March 23, 2021
    Assignee: Cree, Inc.
    Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
  • Publication number: 20210020805
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Application
    Filed: October 2, 2020
    Publication date: January 21, 2021
    Inventors: Kevin W. Haberern, Matthew Donofrio, Bennett Langsdorf, Thomas Place, Michael John Bergmann
  • Publication number: 20200365782
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Inventors: Bradley E. Williams, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
  • Patent number: 10797201
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: October 6, 2020
    Assignee: CREE, INC.
    Inventors: Kevin W. Haberern, Matthew Donofrio, Bennett Langsdorf, Thomas Place, Michael John Bergmann
  • Patent number: 10734558
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: August 4, 2020
    Assignee: Cree Huizhou Solid State Lighting Company Limited
    Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
  • Publication number: 20190198734
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Application
    Filed: March 1, 2019
    Publication date: June 27, 2019
    Inventors: BRADLEY E. WILLIAMS, KEVIN W. HABERERN, BENNETT D. LANGSDORF, MANUEL L. BREVA
  • Patent number: 10283681
    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: May 7, 2019
    Assignee: Cree, Inc.
    Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
  • Patent number: 10243121
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: March 26, 2019
    Assignee: Cree, Inc.
    Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
  • Publication number: 20190074407
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Application
    Filed: October 29, 2018
    Publication date: March 7, 2019
    Inventors: Kevin W. Haberern, Matthew Donofrio, Bennett Langsdorf, Thomas Place, Michael John Bergmann
  • Patent number: 10115860
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: October 30, 2018
    Assignee: CREE, INC.
    Inventors: Kevin W. Haberern, Matthew Donofrio, Bennett Langsdorf, Thomas Place, Michael John Bergmann
  • Publication number: 20170309778
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Application
    Filed: July 12, 2017
    Publication date: October 26, 2017
    Inventors: Kevin W. Haberern, Matthew Donofrio, Bennett Langsdorf, Thomas Place, Michael John Bergmann
  • Patent number: 9728676
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Grant
    Filed: October 9, 2013
    Date of Patent: August 8, 2017
    Assignee: Cree, Inc.
    Inventors: Kevin W. Haberern, Matthew Donofrio, Bennett Langsdorf, Thomas Place, Michael John Bergmann
  • Publication number: 20150249196
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Application
    Filed: April 29, 2015
    Publication date: September 3, 2015
    Inventors: BRADLEY E. WILLIAMS, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
  • Publication number: 20150069430
    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
    Type: Application
    Filed: May 14, 2014
    Publication date: March 12, 2015
    Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
  • Publication number: 20140167065
    Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.
    Type: Application
    Filed: February 20, 2014
    Publication date: June 19, 2014
    Applicant: CREE, INC.
    Inventors: Michael Bergmann, Matthew Donofrio, Sten Heikman, Kevin S. Schneider, Kevin W. Haberern, John A. Edmond
  • Patent number: 8686429
    Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: April 1, 2014
    Assignee: Cree, Inc.
    Inventors: Michael Bergmann, Matthew Donofrio, Sten Heikman, Kevin S. Schneider, Kevin W. Haberern, John A. Edmond
  • Publication number: 20140070245
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Application
    Filed: October 9, 2013
    Publication date: March 13, 2014
    Applicant: CREE, INC.
    Inventors: KEVIN W. HABERERN, MATTHEW DONOFRIO, BENNETT LANGSDORF, THOMAS PLACE, MICHAEL JOHN BERGMANN
  • Publication number: 20120326159
    Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.
    Type: Application
    Filed: June 24, 2011
    Publication date: December 27, 2012
    Inventors: Michael Bergmann, Matthew Donofrio, Sten Heikman, Kevin S. Schneider, Kevin W. Haberern, John A. Edmond
  • Publication number: 20080258130
    Abstract: A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system on the silicon carbide substrate, and respective ohmic contacts on the top side of the diode. The silicon carbide substrate is beveled with respect to the interface between the silicon carbide and the Group III nitride.
    Type: Application
    Filed: April 23, 2007
    Publication date: October 23, 2008
    Inventors: Michael J. Bergmann, David T. Emerson, Kevin W. Haberern
  • Publication number: 20080191224
    Abstract: A light emitting diode is disclosed that includes a transparent substrate with an absorption coefficient less than 4 per centimeter, epitaxial layers having absorption coefficients of less than 500 per centimeter in the layers other than the active emission layers, an ohmic contact and metallization layer on at least one of the epitaxial layers, with the ohmic contact and metallization layer having a transmission of at least about 80 percent, and bond pads with reflectivity greater than at least about 70 percent.
    Type: Application
    Filed: February 9, 2007
    Publication date: August 14, 2008
    Inventors: David T. Emerson, Michael J. Bergmann, Kevin W. Haberern