Patents by Inventor Ki-Hwan Kim

Ki-Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230402535
    Abstract: A semiconductor device includes; a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of spaced apart and vertically stacked semiconductor patterns, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode on the plurality of semiconductor patterns, the gate electrode including a portion interposed between adjacent ones of the plurality of semiconductor patterns, and an inner spacer interposed between the portion of the gate electrode and the source/drain pattern, wherein the inner spacer is crystalline metal oxide is expressed by a formula (MO), wherein (O) is an oxygen atom, and (M) is a metal atom selected from a group consisting of Mg, Be, and Ga.
    Type: Application
    Filed: December 15, 2022
    Publication date: December 14, 2023
    Inventors: KYUNGHO KIM, KI HWAN KIM, KANG HUN MOON, CHOEUN LEE, YONGUK JEON
  • Patent number: 11843053
    Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: December 12, 2023
    Inventors: Su Jin Jung, Ki Hwan Kim, Sung Uk Jang, Young Dae Cho
  • Patent number: 11835833
    Abstract: An electrochromic device having a conductive layer having reflectiveness and light absorption characteristics simultaneously. The device is capable of realizing various esthetic senses, color senses or stereoscopic color patterns, and at the same time has excellent durability.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: December 5, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Yong Chan Kim, Ki Hwan Kim, Pil Sung Jo
  • Publication number: 20230387205
    Abstract: A semiconductor device includes a substrate including an active pattern; a source/drain pattern on the active pattern; a gate electrode on the active pattern; and a gate spacer on the source/drain pattern. The source/drain pattern includes a first semiconductor layer on the active pattern and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes a first inner sidewall and second inner sidewall on the second semiconductor layer. A distance between the first and second inner sidewalls of the first semiconductor layer decreases according as positions of two portions of the first semiconductor layer where the distance is measured become closer to the gate spacer decreases.
    Type: Application
    Filed: January 23, 2023
    Publication date: November 30, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki Hwan KIM, KYUNGHO KIM, KANG HUN MOON, CHOEUN LEE, Yonguk JEON
  • Publication number: 20230387206
    Abstract: A semiconductor device comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a plurality of gate structures disposed on the lower pattern to be spaced apart from each other in a second direction, each of the gate structures including a gate electrode and gate insulating films, source/drain recesses defined between adjacent gate structures and a source/drain pattern filling the source/drain recesses. Each source/drain pattern may include a first semiconductor liner, which extend along sidewalls and a bottom surface of the source/drain recesses, second semiconductor liners, which are on the first semiconductor liners and extend along the sidewalls and the bottom surface of the source/drain recesses, and a filling semiconductor film, which is on the second semiconductor liners and fills the source/drain recess.
    Type: Application
    Filed: March 3, 2023
    Publication date: November 30, 2023
    Inventors: Ki Hwan KIM, Kyung Ho KIM, Kang Hun MOON, Cho Eun LEE, Yong Uk JEON
  • Publication number: 20230369596
    Abstract: An electrode has a current collector and an active material layer, which can provide an electrode capable of ensuring high levels of adhesion force between particles, and adhesion force between the active material layer and the current collector compared with a binder content in the active material layer. An electrochemical element and a secondary battery having the electrode are also provided.
    Type: Application
    Filed: September 27, 2021
    Publication date: November 16, 2023
    Applicant: LG Energy Solution, Ltd.
    Inventors: Geun Sung Lee, Il Ha Lee, In Taek Song, Jin Woo Park, Ki Hwan Kim, Ho Chan Lee
  • Patent number: 11812837
    Abstract: A decoration member for a cosmetic container including: a color expression layer having a light reflecting layer and a light absorbing layer provided on the light reflecting layer; and a substrate provided on one surface of the color expression layer.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: November 14, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Yong Chan Kim, Ki Hwan Kim, Nansra Heo, Jeong Woo Shon, Pilsung Jo
  • Publication number: 20230335709
    Abstract: The present application relates to an electrode, a method for manufacturing the electrode, and a secondary battery comprising the electrode. The present application relates to an electrode comprising a current collector, an active material layer, and a thiophene polymer layer formed on the active material layer and can provide an electrode capable of ensuring a higher level of adhesion force between particles and adhesion force between the active material layer and the current collector relative to the binder content in the active material layer. In addition, the present application can provide a method for manufacturing the electrode, and a secondary battery comprising the same.
    Type: Application
    Filed: September 27, 2021
    Publication date: October 19, 2023
    Applicant: LG Energy Solution, Ltd.
    Inventors: Joon Koo Kang, Ki Hwan Kim, Il Ha Lee, Sang Joon Park
  • Patent number: 11791456
    Abstract: A negative electrode having a carbon-based thin film formed on at least one surface of a lithium metal layer, and a lithium secondary battery including the same. A carbon-based thin film formed on at least one surface of a lithium metal layer blocks side reactions caused by direct contact between the lithium metal layer and an electrolyte as well as increasing a specific surface area of a negative electrode, and thereby suppresses lithium dendrite formation, and by obtaining current density distribution uniformly, enhances cycle performance, reduces an overvoltage to improve electrochemical performance of a lithium secondary battery.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: October 17, 2023
    Assignee: LG ENERGY SOLUTION, LTD.
    Inventors: Heewon Choi, Eun Kyung Kim, Ki Hwan Kim, Sangwook Woo, Jeong Woo Shon, Ohbyong Chae
  • Publication number: 20230317955
    Abstract: An electrode has a current collector and an active material layer, which can provide an electrode capable of ensuring high levels of adhesion force between particles, and adhesion force between the active material layer and the current collector compared with a binder content in the active material layer. An-electrochemical element and a secondary battery comprising the electrode are also provided.
    Type: Application
    Filed: September 27, 2021
    Publication date: October 5, 2023
    Applicant: LG Energy Solution, Ltd.
    Inventors: Geun Sung Lee, Il Ha Lee, In Taek Song, Ki Hwan Kim, Yeong Bong Mok, Ho Chan Lee
  • Patent number: 11774647
    Abstract: The present disclosure relates to a decoration element comprising a light reflective layer; and a light absorbing layer provided on the light reflective layer, wherein the light absorbing layer has surface resistance of 20 ohm/square or greater.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: October 3, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Yong Chan Kim, Jeong Woo Shon, Pilsung Jo, Ki Hwan Kim, Song Ho Jang
  • Publication number: 20230307647
    Abstract: The present application provides an electrode active material having excellent electrical conductivity and ionic conductivity as well as excellent mechanical flexibility by forming a unique conductive polymer layer on an active material core, while preventing side reactions between the active material core and an electrolyte from occurring, and an electrode comprising the same. Accordingly, it is possible to provide a lithium secondary battery having an excellent capacity retention ratio (lifetime characteristics) according to charging/discharging while having a high energy density. The conductive polymer layer includes a thiophene-based polymer having one or more functional groups selected from the group consisting of a carboxyl group, a hydroxyl group, an amine group, a nitro group, an ether group, a carbonyl group and a flowable functional group.
    Type: Application
    Filed: August 19, 2021
    Publication date: September 28, 2023
    Applicant: LG Energy Solution, Ltd.
    Inventors: Joon Koo Kang, Il Ha Lee, Ki Hwan Kim
  • Publication number: 20230307545
    Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
    Type: Application
    Filed: June 1, 2023
    Publication date: September 28, 2023
    Inventors: Sung Uk JANG, Young Dae CHO, Ki Hwan KIM, Su Jin JUNG
  • Patent number: 11738536
    Abstract: A decoration element including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on a surface of the color developing layer. The substrate comprises a pattern layer, and the light absorbing layer comprises an aluminum oxynitride (AlaObNc).
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: August 29, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Nansra Heo, Yong Chan Kim, Song Ho Jang, Ki Hwan Kim, Jeong Woo Shon, Jin Suk Song, Pilsung Jo
  • Publication number: 20230263017
    Abstract: A display device includes: a substrate; a barrier layer on the substrate, and including: a trench area recessed in a direction towards the substrate; and a flat area surrounding the trench area, and having a flat upper surface; and a switching transistor and a driving transistor on the barrier layer. The switching transistor includes: a first active layer on the barrier layer, at least a portion of the first active layer being located at the trench area, the first active layer including a channel area, and a source area and a drain area at opposite sides of the channel area; a first gate electrode on the first active layer; and a first upper electrode and a second upper electrode on and connected to the first active layer.
    Type: Application
    Filed: October 6, 2022
    Publication date: August 17, 2023
    Inventors: JOON SEOK PARK, Saeroonter Oh, Ki Hwan KIM, MYOUNGHWA KIM, Min Goo KIM, JUN HYUNG LIM
  • Patent number: 11680309
    Abstract: A method for preparing an electrochromic device. In the method the device is prepared by inserting monovalent cations into a reducing electrochromic layer in advance, for instance, through a dry process. In particular, the method involves inserting monovalent cations into an electrochromic layer which includes a reducing electrochromic material. Then, subsequently and sequentially, placing an electrolyte layer and an ion storage layer on the electrochromic layer. In this way, it is possible to improve driving durability of the electrochromic device.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: June 20, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Yong Chan Kim, Ki Hwan Kim, Jeong Woo Shon, Pil Sung Jo
  • Patent number: 11673368
    Abstract: A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The substrate includes a pattern layer, and the light absorbing layer includes silicon (Si).
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: June 13, 2023
    Assignee: LG CHEM, LTD
    Inventors: Yong Chan Kim, Ki Hwan Kim, Nansra Heo, Jeong Woo Shon, Jin Suk Song, Pilsung Jo
  • Patent number: 11670716
    Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: June 6, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Uk Jang, Young Dae Cho, Ki Hwan Kim, Su Jin Jung
  • Publication number: 20230161089
    Abstract: The present disclosure relates to a decoration element comprising a light reflective layer; a light absorbing layer provided on the light reflective layer; and a color developing layer comprising a color film provided on a surface opposite to the surface facing the light absorbing layer of the light reflective layer, between the light reflective layer and the light absorbing layer, or on a surface opposite to the surface facing the light reflective layer of the light absorbing layer.
    Type: Application
    Filed: July 4, 2018
    Publication date: May 25, 2023
    Inventors: Pilsung Jo, Song Ho Jang, Yong Chan Kim, Jeong Woo Shon, Jin Suk Song, Ki Hwan Kim
  • Patent number: 11644730
    Abstract: An electrochromic device including an electrode layer, an electrochromic layer and a conductive band having a closed ring shape. The electrochromic device having the above structure has excellent color-switching speeds and electrochromic uniformity.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: May 9, 2023
    Assignee: LG CHEM, LTD.
    Inventors: Yong Chan Kim, Ki Hwan Kim, Pil Sung Jo