Abstract: Provided is a cleaning device including a vacuum cleaner including a dust collector into which dirt and dust is collected, a docking station connected to the dust collector and having a long axis extending in a first direction, and the docking station includes a docking part coupled to the dust collector to remove dirt and dust collected in the dust collector, a sucking device sucking up the dirt and dust and inside air in the dust collector docked with the docking part through the docking part, and a circulation duct arranged for the air sucked up by the sucking device to be circulated to the docking part.

Abstract: A cleaning apparatus includes a cleaner including a dust container in which contaminants are collected and a dust container cover rotatably coupled to the dust container to open or close the dust container, and a docking station on which the cleaner is detachably mounted, the docking station including a collecting portion to collect the contaminants in the dust container in response to the mounting and a duct portion forming a channel to guide the contaminants in the dust container to the collecting portion in response to the mounting; a cover opening device configured to open the dust container cover, and a cover closing device configured to close the dust container cover, the cover closing device including a rotary lever configured to be movable between a first position forming a portion of the channel of the duct portion and a second position supporting the dust container cover in a closing direction.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: The present invention relates to a use of microRNA(miR)-188-5p which can be used for treatment of Alzheimer's disease, and the pharmaceutical composition comprising miR-188-5p as an active ingredient of the present invention can inhibit the expression of NRP2 protein when it is added to a subject having Alzheimer's disease, thereby restoring the reduced density of dendritic spines and enhancing synaptic transmission, and thus it can prevent or treat Alzheimer's disease effectively.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: The present invention relates to a use of microRNA(miR)-188-5p which can be used for treatment of Alzheimer's disease, and the pharmaceutical composition comprising miR-188-5p as an active ingredient of the present invention can inhibit the expression of NRP2 protein when it is added to a subject having Alzheimer's disease, thereby restoring the reduced density of dendritic spines and enhancing synaptic transmission, and thus it can prevent or treat Alzheimer's disease effectively.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.