Patents by Inventor Kimihiro AOYAMA

Kimihiro AOYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11441109
    Abstract: The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20° C. and a pH of 9.0-14.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: September 13, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Takahiro Kikunaga, Hiroaki Horie, Kimihiro Aoyama, Nobuo Tajima
  • Publication number: 20220243035
    Abstract: Provided is a cellulose solution (a composition) in which decomposition of cellulose does not easily proceed even if heated. Further, provided is a method for producing a cellulose fiber excellent in mechanical strength. The composition includes cellulose and a compound represented by the following formula (1), a concentration of 1-methylimidazolium chloride being 300 ppm or less on a mass basis with respect to the compound represented by the formula (1). In the formula (1), R is an alkyl group having 2 to 6 carbon atoms, and Me is a methyl group.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 4, 2022
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kimihiro AOYAMA, Tetsuhiko MIZUSAKA, Yasuyoshi NAKAYASU, Yasuo GOTOH
  • Publication number: 20210047594
    Abstract: The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20° C. and a pH of 9.0-14.
    Type: Application
    Filed: March 5, 2019
    Publication date: February 18, 2021
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Takahiro KIKUNAGA, Hiroaki HORIE, Kimihiro AOYAMA, Nobuo TAJIMA
  • Patent number: 10301581
    Abstract: Liquid cleaning compositions for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device, which comprise hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphonic acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass, and water.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: May 28, 2019
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kimihiro Aoyama, Nobuo Tajima
  • Publication number: 20170110363
    Abstract: [Problem] To provide a liquid cleaning composition for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device. [Solution] A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.
    Type: Application
    Filed: October 11, 2016
    Publication date: April 20, 2017
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kimihiro AOYAMA, Nobuo TAJIMA
  • Publication number: 20170101607
    Abstract: [Problem] To provide a liquid cleaning composition for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device. [Solution] A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass and water.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 13, 2017
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kimihiro AOYAMA, Nobuo TAJIMA
  • Patent number: 8956462
    Abstract: The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: February 17, 2015
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Hiroshi Matsunaga, Kimihiro Aoyama
  • Publication number: 20130260571
    Abstract: The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.
    Type: Application
    Filed: March 13, 2013
    Publication date: October 3, 2013
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Hiroshi MATSUNAGA, Kimihiro AOYAMA