Patents by Inventor Kimitoshi Satou

Kimitoshi Satou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9616530
    Abstract: A heat exchanger tube inserting apparatus includes a roller conveyor section and a pushing section. The roller conveyor section includes a roller that advances the heat exchanger tube to thereby insert the heat exchanger tube into the insertion holes of the fins and to a first position by rotation of the roller. The pushing section pushes the heat exchanger tube, which has been moved to the first position by the roller conveyor section, to a second position located further inside than the first position.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: April 11, 2017
    Assignee: Daikin Industries, Ltd.
    Inventors: Takuya Kondou, Kimitoshi Satou, Tomonari Sera, Takayuki Takahashi, Yoshikazu Tanaka
  • Publication number: 20150367461
    Abstract: A heat exchanger tube inserting apparatus includes a roller conveyor section and a pushing section. The roller conveyor section includes a roller that advances the heat exchanger tube to thereby insert the heat exchanger tube into the insertion holes of the fins and to a first position by rotation of the roller. The pushing section pushes the heat exchanger tube, which has been moved to the first position by the roller conveyor section, to a second position located further inside than the first position.
    Type: Application
    Filed: January 29, 2014
    Publication date: December 24, 2015
    Inventors: Takuya KONDOU, Kimitoshi SATOU, Tomonari SERA, Takayuki TAKAHASHI, Yoshikazu TANAKA
  • Patent number: 8304899
    Abstract: A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.
    Type: Grant
    Filed: July 14, 2008
    Date of Patent: November 6, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou, Yasuo Yamaguchi
  • Patent number: 7802612
    Abstract: In a die-casting mold used in a casting method, a fixed insert includes a recessed cavity portion, and a fixed mold body is arranged to hold the fixed insert. The fixed insert includes a first insert and a second insert. The first insert is held with the fixed mold body. The second insert is fitted and held within a recess formed on the first insert. The size of the second insert is minimized so as to just surround the recessed cavity portion.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: September 28, 2010
    Assignee: Yamaha Hatsudoki Kabushiki Kaisha
    Inventors: Hiroshi Yoshii, Kimitoshi Satou, Takayoshi Inamura
  • Publication number: 20090260773
    Abstract: In a die-casting mold used in a casting method, a fixed insert includes a recessed cavity portion, and a fixed mold body is arranged to hold the fixed insert. The fixed insert includes a first insert and a second insert. The first insert is held with the fixed mold body. The second insert is fitted and held within a recess formed on the first insert. The size of the second insert is minimized so as to just surround the recessed cavity portion.
    Type: Application
    Filed: July 31, 2006
    Publication date: October 22, 2009
    Applicant: YAMAHA HATSUDOKI KABUSHIKI KAISHA
    Inventors: Hiroshi Yoshii, Kimitoshi Satou, Takayoshi Inamura
  • Publication number: 20090230485
    Abstract: A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.
    Type: Application
    Filed: July 14, 2008
    Publication date: September 17, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Mika OKUMURA, Makio Horikawa, Kimitoshi Satou, Yasuo Yamaguchi
  • Patent number: 7533570
    Abstract: In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: May 19, 2009
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yasuo Yamaguchi, Makio Horikawa, Mika Okumura, Kimitoshi Satou
  • Patent number: 7495301
    Abstract: A thin film structure including a conductive thin film provided on a substrate and configured to be displaced in response to an applied acceleration, a pair of electrode pads formed on the substrate such that the pair of electrode pads are disposed on respective sides of the thin film, and a nonconductive film covering a top surface of the thin film and the side of the thin film facing the electrode pads. A top surface of the conductive thin film being higher than top surfaces of the electrode pads.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: February 24, 2009
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou
  • Publication number: 20070062285
    Abstract: In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.
    Type: Application
    Filed: April 6, 2006
    Publication date: March 22, 2007
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yasuo YAMAGUCHI, Makio Horikawa, Mika Okumura, Kimitoshi Satou
  • Publication number: 20070031638
    Abstract: The present invention provides a thin film structure configured such that: thin films 8a and 8b and an electrode pad 7 are provided on a substrate 5; and a nonconductive shielding film 11 is formed on the sides of the thin films 8a facing the electrode pad 7 such that the top surface of the shielding film 11 is higher than the top surface of the electrode pad 7. That is, the shielding film 11 covers the top surfaces and sides of the thin films 8a between adjacent electrode pads. This arrangement allows one to reduce the parasitic capacitance between adjacent electrode pads and prevent a change in the characteristics, as well as canceling the fringe effect.
    Type: Application
    Filed: February 24, 2006
    Publication date: February 8, 2007
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Mika OKUMURA, Makio Horikawa, Kimitoshi Satou
  • Patent number: 7094620
    Abstract: A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.
    Type: Grant
    Filed: January 29, 2003
    Date of Patent: August 22, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou
  • Publication number: 20050227477
    Abstract: An object of the present invention is to provide a technique for reducing a step height to be covered by photoresist during formation of an electrode connected to a semiconductor substrate, e.g. a silicon substrate on which an acceleration sensor resides. In order to achieve this object, an opening (80) for formation of an electrode (90) is formed before formation of a sacrificial layer (4), semiconductor film (50), and fixed electrode (51). Therefore thick photoresist is not required.
    Type: Application
    Filed: January 29, 2003
    Publication date: October 13, 2005
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou
  • Patent number: 5335550
    Abstract: A small, precise semiconductor pressure sensor has a flat, thin diaphragm of uniform thickness that is formed by a simple process. A first silicon substrate and a second silicon substrate are bonded to each other with an interface insulating film interposed between them and circuitry including gauge resistors is fabricated on the primary surface of the second silicon substrate. The interface insulating film may be disposed in the recess of a vacuum chamber and may have a two layer structure. If alignment marks are formed, the circuitry can be accurately formed relative to the vacuum chamber.
    Type: Grant
    Filed: June 24, 1992
    Date of Patent: August 9, 1994
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kimitoshi Satou