Abstract: An optoelectronic device uses microcode to perform an end of life calculation for the optoelectronic device. In a disclosed example, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for itself based on one or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can provide a result in a format which is useful to a host system with which the device is connected. The optoelectronic device may automatically shut itself down upon reaching its calculated end of life.

Abstract: An optoelectronic device uses microcode to perform an end of life calculation for the optoelectronic device. In a disclosed example, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for itself based on one or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can provide a result in a format which is useful to a host system with which the device is connected. The optoelectronic device may automatically shut itself down upon reaching its calculated end of life.

Abstract: An optoelectronic device uses microcode to perform an end of life calculation for the optoelectronic device. In particular, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for itself based on one or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can provide a result in a format which is useful to a host system with which the device is connected. The optoelectronic device may automatically shut itself down upon reaching its calculated end of life.

Abstract: An optoelectronic device that uses microcode to perform an end of life calculation for a laser in the optoelectronic device is disclosed. In particular, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for the laser based one on or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can further provide a result in a format which is useful to a host system with which the device is connected.

Abstract: A system and method for intentional doping, including variable doping, within a semiconductor structure for improved efficiency is described. One embodiment includes a method for forming a semiconductor structure, the method comprising forming a first semiconductor layer, wherein the first semiconductor layer comprises a first semiconductor material, and forming a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer comprises a second semiconductor material, wherein the second semiconductor material is an oppositely-typed semiconductor material from the first semiconductor material, and wherein the second semiconductor layer comprises a first region adjacent to the first semiconductor layer, wherein the first region comprises second semiconductor material, and a second region adjacent to the first region, wherein the second region comprises intentionally doped second semiconductor material to increase a built-in potential of the semiconductor structure.

Abstract: A system and method for variable doping within a semiconductor structure for improved efficiency is described. One embodiment includes a semiconductor structure comprising a first semiconductor layer comprising a first semiconductor material, and a second semiconductor layer comprising a second semiconductor material, wherein the second semiconductor material is an oppositely-typed semiconductor material from the first semiconductor material, and wherein the second semiconductor layer comprises a first region adjacent to the first semiconductor layer, wherein the first region comprises low-doped second semiconductor material, and a second region adjacent to the first region, wherein the second region comprises highly-doped second semiconductor material to increase a built-in potential of the semiconductor structure.

Abstract: A method for fabricating a photovoltaic cell with an integrated shunt protection diode. The photovoltaic cell and corresponding integrated shunt protection diode are created by first scribing a transparent conductive oxide layer on a substrate to define a plurality of transparent conductive oxide areas. Next, a semiconductor layer is deposited onto a surface of the transparent conductive oxide layer. This semiconductor layer is scribed to expose a portion of each of the transparent conductive oxide areas. A conductive layer is then deposited onto a surface of the semiconductor layer. Subsequently, the conductive layer is scribed into conductive areas.

Abstract: An optoelectronic transceiver comprises an active linear TOSA circuit mounted on a header. The active linear TOSA circuit includes input nodes for receiving a differential signal pair, a first bipolar transistor, a second bipolar transistor and an electro-optical transducer. A base terminal of the first bipolar transistor is coupled to the two input nodes and an emitter terminal of the first bipolar transistor is coupled to a base terminal of the second bipolar transistor. A collector terminal of the first bipolar transistor is coupled to a first terminal of the electro-optical transducer, the first terminal of the electro-optical transducer also being configured to be coupled to a voltage source. A collector terminal of the second bipolar transistor is coupled to a second terminal of the electro-optical transducer and an emitter terminal of the second bipolar transistor is coupled to a signal ground which is not the header ground.

Abstract: A method for calibrating the calculation of a laser power measurement with respect to specified operational and/or environmental parameters in an optoelectronic device, such as an optical transceiver module having a laser diode, is disclosed. In particular, the method includes sensing analog data that relates to light emission from the laser diode using a monitor photodiode disposed in the optical transceiver module. Additional sensors are then used to sense analog data that relates to the temperature and voltage of the monitor photodiode. The analog data is converted into digital data, then a formulaic relationship that relates the light emission data to the temperature and voltage data is used to calculate the laser power of the laser diode. Calibration by this method accounts for unintended effects caused by temperature and voltage fluctuations in the optical transceiver module.

Abstract: Media converters for use in optical-to-electrical and electrical-to-optical conversion. A media converter includes an outer housing, an electrical plug disposed on one end of the outer housing, an optical cable disposed on an opposite end of the outer housing, and circuitry that connects to both the electrical plug and the optical cable. In this example, the circuitry receives electrical signals from the electrical plug and outputs corresponding optical signals to the optical cable. In addition, the circuitry also receives optical signals from the optical cable and outputs corresponding electrical signals to the electrical plug.

Abstract: An optoelectronic transceiver comprises an active linear TOSA circuit mounted on a header. The active linear TOSA circuit includes input nodes for receiving a differential signal pair, a first bipolar transistor, a second bipolar transistor and an electro-optical transducer. A base terminal of the first bipolar transistor is coupled to the two input nodes and an emitter terminal of the first bipolar transistor is coupled to a base terminal of the second bipolar transistor. A collector terminal of the first bipolar transistor is coupled to a first terminal of the electro-optical transducer, the first terminal of the electro-optical transducer also being configured to be coupled to a voltage source. A collector terminal of the second bipolar transistor is coupled to a second terminal of the electro-optical transducer and an emitter terminal of the second bipolar transistor is coupled to a signal ground which is not the header ground.

Abstract: An optoelectronic device uses microcode to perform an end of life calculation for the optoelectronic device. In particular, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for itself based on one or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can provide a result in a format which is useful to a host system with which the device is connected. The optoelectronic device may automatically shut itself down upon reaching its calculated end of life.

Abstract: Media converters for use in optical-to-electrical and electrical-to-optical conversion. A media converter includes an outer housing, an electrical plug disposed on one end of the outer housing, an optical cable disposed on an opposite end of the outer housing, and circuitry that connects to both the electrical plug and the optical cable. In this example, the circuitry receives electrical signals from the electrical plug and outputs corresponding optical signals to the optical cable. In addition, the circuitry also receives optical signals from the optical cable and outputs corresponding electrical signals to the electrical plug.

Abstract: An optoelectronic device that uses microcode to perform an end of life calculation for a laser in the optoelectronic device is disclosed. In particular, the optoelectronic device senses environmental and operational parameters under changing conditions during device operation. The optoelectronic device then calculates the end of life for the laser based one on or more of the sensed environmental and/or operational parameters. The calculation can be done in real time and using digital logic. The calculation can further provide a result in a format which is useful to a host system with which the device is connected.

Abstract: A method for calibrating the calculation of a laser power measurement with respect to specified operational and/or environmental parameters in an optoelectronic device, such as an optical transceiver module having a laser diode, is disclosed. In particular, the method includes sensing analog data that relates to light emission from the laser diode using a monitor photodiode disposed in the optical transceiver module. Additional sensors are then used to sense analog data that relates to the temperature and voltage of the monitor photodiode. The analog data is converted into digital data, then a formulaic relationship that relates the light emission data to the temperature and voltage data is used to calculate the laser power of the laser diode. Calibration by this method accounts for unintended effects caused by temperature and voltage fluctuations in the optical transceiver module.

Abstract: A relatively small, pluggable optical transceiver utilizes a set of at least three separate printed wiring boards (PWBs), coupled together with a pair of flexible wiring boards, allows for the “middle” (base) PWB to be disposed in a horizontal plane, with the PWBs on either side (i.e., a transmitter PWB and a receiver PWB) to be disposed parallel to the base PWB, by virtue of using the flexible PWBs. Advantageously, the optoelectronic transmitter and receiver modules are directly connected (hardwired) to their respective, vertical PWBs, to form a rugged arrangement. Crosstalk between the vertical boards is reduced by using a shielding plate between the boards. Undesired fiber movement is reduced (as compared to the prior art) by separating the optical path from the electrical path, which also provides mechanical relief for the transmitter and receiver PWBs.

Abstract: Output optical power of an optical transmitter is regulated to compensate for fluctuations in output optical power and for tracking error. Dual loop automatic power control includes an optical sensor feedback loop for sensing optical energy proximate a back facet of the optical transmitter and a thermal sensor feedback loop for sensing thermal energy at point proximate the optical transmitter. Fluctuations in sensed thermal energy are indicative of the tracking error of the optical transmitter. Signals indicative of the sensed optical and thermal energy are combined and utilized to regulate the output optical power to be approximately constant over a predetermined range of temperatures.