Patents by Inventor Kiyofumi Ogino

Kiyofumi Ogino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240057378
    Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.
    Type: Application
    Filed: December 16, 2021
    Publication date: February 15, 2024
    Inventors: Daiki NAKAMURA, Tomoya AOYAMA, Yasutaka NAKAZAWA, Rai SATO, Seiji YASUMOTO, Kiyofumi OGINO, Takashi SHIRAISHI
  • Publication number: 20240014218
    Abstract: A semiconductor device including a transistor with high on-state current and a fabrication method thereof are provided. A semiconductor device having favorable electrical characteristics and a fabrication method thereof are provided. The semiconductor device includes a substrate, an island-shaped insulating layer over the substrate, and a transistor over the substrate and the insulating layer. The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, and a pair of conductive layers. One of the pair of the conductive layers includes a region overlapping with the insulating layer, and the other of the pair of the conductive layers includes a region not overlapping with the insulating layer. The level of a top surface of the other of the pair of the conductive layers is lower than the level of a top surface of the one of the pair of the conductive layers. Each of the pair of the conductive layers is in contact with the semiconductor layer.
    Type: Application
    Filed: November 8, 2021
    Publication date: January 11, 2024
    Inventors: Rai SATO, Yasuharu HOSAKA, Yasutaka NAKAZAWA, Takashi SHIRAISHI, Kiyofumi OGINO, Kenichi OKAZAKI
  • Patent number: 11848439
    Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: December 19, 2023
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Kiyofumi Ogino
  • Patent number: 11677073
    Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: June 13, 2023
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Nobuhiro Inoue, Kiyofumi Ogino
  • Publication number: 20220302433
    Abstract: A power storage device with high capacity is provided. A power storage device with high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode with high capacity is provided. An electrode with high energy density is provided. A highly reliable electrode is provided. Such a power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes active material particles, spaces provided on the periphery of the active material particles, graphene, and a binder. The active material particles are silicon. The active material particles and the spaces are surrounded by the graphene and the binder.
    Type: Application
    Filed: January 6, 2022
    Publication date: September 22, 2022
    Inventor: Kiyofumi OGINO
  • Patent number: 11289692
    Abstract: A power storage device with high capacity is provided. A power storage device with high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode with high capacity is provided. An electrode with high energy density is provided. A highly reliable electrode is provided. Such a power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes active material particles, spaces provided on the periphery of the active material particles, graphene, and a binder. The active material particles are silicon. The active material particles and the spaces are surrounded by the graphene and the binder.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: March 29, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Kiyofumi Ogino
  • Publication number: 20210210744
    Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
    Type: Application
    Filed: December 14, 2020
    Publication date: July 8, 2021
    Inventor: Kiyofumi OGINO
  • Publication number: 20210057738
    Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Inventors: Nobuhiro INOUE, Kiyofumi OGINO
  • Patent number: 10873072
    Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: December 22, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kiyofumi Ogino
  • Patent number: 10847791
    Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: November 24, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Kiyofumi Ogino
  • Patent number: 10658661
    Abstract: An electrode and a power storage device each of which achieves better charge-discharge cycle characteristics and is less likely to deteriorate owing to separation of an active material, or the like are manufactured. As the electrode for the power storage device, an electrode including a current collector and an active material layer that is over the current collector and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material layer or its separation from the current collector, can be suppressed.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: May 19, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Kiyofumi Ogino, Nobuhiro Inoue
  • Patent number: 10593940
    Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 ?m and less than or equal to 7 ?m.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: March 17, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kiyofumi Ogino, Yumiko Yoneda, Rika Yatabe, Nobuhiro Inoue
  • Patent number: 10187985
    Abstract: A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low coat and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: January 22, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Teppei Oguni, Kiyofumi Ogino, Hisao Ikeda
  • Publication number: 20180331357
    Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
    Type: Application
    Filed: July 11, 2018
    Publication date: November 15, 2018
    Inventors: Nobuhiro INOUE, Kiyofumi OGINO
  • Patent number: 10128498
    Abstract: A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: November 13, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Nobuhiro Inoue, Kiyofumi Ogino
  • Publication number: 20180309119
    Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 ?m and less than or equal to 7 ?m.
    Type: Application
    Filed: July 2, 2018
    Publication date: October 25, 2018
    Inventors: Kiyofumi OGINO, Yumiko YONEDA (Former SAITO), Rika YATABE, Nobuhiro INOUE
  • Publication number: 20180248169
    Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
    Type: Application
    Filed: April 27, 2018
    Publication date: August 30, 2018
    Inventor: Kiyofumi OGINO
  • Patent number: 10032918
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: July 24, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Daisuke Matsubayashi, Ryo Tokumaru, Yasumasa Yamane, Kiyofumi Ogino, Taichi Endo, Hajime Kimura
  • Patent number: 10026959
    Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: July 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Kiyofumi Ogino
  • Publication number: 20180184520
    Abstract: A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low coat and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
    Type: Application
    Filed: February 9, 2018
    Publication date: June 28, 2018
    Inventors: Shunpei Yamazaki, Teppei Oguni, Kiyofumi Ogino, Hisao Ikeda