Patents by Inventor Kiyofumi Ogino
Kiyofumi Ogino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240057378Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.Type: ApplicationFiled: December 16, 2021Publication date: February 15, 2024Inventors: Daiki NAKAMURA, Tomoya AOYAMA, Yasutaka NAKAZAWA, Rai SATO, Seiji YASUMOTO, Kiyofumi OGINO, Takashi SHIRAISHI
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Publication number: 20240014218Abstract: A semiconductor device including a transistor with high on-state current and a fabrication method thereof are provided. A semiconductor device having favorable electrical characteristics and a fabrication method thereof are provided. The semiconductor device includes a substrate, an island-shaped insulating layer over the substrate, and a transistor over the substrate and the insulating layer. The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, and a pair of conductive layers. One of the pair of the conductive layers includes a region overlapping with the insulating layer, and the other of the pair of the conductive layers includes a region not overlapping with the insulating layer. The level of a top surface of the other of the pair of the conductive layers is lower than the level of a top surface of the one of the pair of the conductive layers. Each of the pair of the conductive layers is in contact with the semiconductor layer.Type: ApplicationFiled: November 8, 2021Publication date: January 11, 2024Inventors: Rai SATO, Yasuharu HOSAKA, Yasutaka NAKAZAWA, Takashi SHIRAISHI, Kiyofumi OGINO, Kenichi OKAZAKI
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Patent number: 11848439Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.Type: GrantFiled: December 14, 2020Date of Patent: December 19, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventor: Kiyofumi Ogino
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Patent number: 11677073Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.Type: GrantFiled: November 10, 2020Date of Patent: June 13, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Nobuhiro Inoue, Kiyofumi Ogino
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Publication number: 20220302433Abstract: A power storage device with high capacity is provided. A power storage device with high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode with high capacity is provided. An electrode with high energy density is provided. A highly reliable electrode is provided. Such a power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes active material particles, spaces provided on the periphery of the active material particles, graphene, and a binder. The active material particles are silicon. The active material particles and the spaces are surrounded by the graphene and the binder.Type: ApplicationFiled: January 6, 2022Publication date: September 22, 2022Inventor: Kiyofumi OGINO
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Patent number: 11289692Abstract: A power storage device with high capacity is provided. A power storage device with high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode with high capacity is provided. An electrode with high energy density is provided. A highly reliable electrode is provided. Such a power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes active material particles, spaces provided on the periphery of the active material particles, graphene, and a binder. The active material particles are silicon. The active material particles and the spaces are surrounded by the graphene and the binder.Type: GrantFiled: July 11, 2016Date of Patent: March 29, 2022Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventor: Kiyofumi Ogino
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Publication number: 20210210744Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.Type: ApplicationFiled: December 14, 2020Publication date: July 8, 2021Inventor: Kiyofumi OGINO
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Publication number: 20210057738Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.Type: ApplicationFiled: November 10, 2020Publication date: February 25, 2021Inventors: Nobuhiro INOUE, Kiyofumi OGINO
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Patent number: 10873072Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.Type: GrantFiled: April 27, 2018Date of Patent: December 22, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Kiyofumi Ogino
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Patent number: 10847791Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.Type: GrantFiled: July 11, 2018Date of Patent: November 24, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Nobuhiro Inoue, Kiyofumi Ogino
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Patent number: 10658661Abstract: An electrode and a power storage device each of which achieves better charge-discharge cycle characteristics and is less likely to deteriorate owing to separation of an active material, or the like are manufactured. As the electrode for the power storage device, an electrode including a current collector and an active material layer that is over the current collector and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material layer or its separation from the current collector, can be suppressed.Type: GrantFiled: August 28, 2012Date of Patent: May 19, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazutaka Kuriki, Kiyofumi Ogino, Nobuhiro Inoue
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Patent number: 10593940Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 ?m and less than or equal to 7 ?m.Type: GrantFiled: July 2, 2018Date of Patent: March 17, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kiyofumi Ogino, Yumiko Yoneda, Rika Yatabe, Nobuhiro Inoue
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Patent number: 10187985Abstract: A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low coat and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.Type: GrantFiled: February 9, 2018Date of Patent: January 22, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Teppei Oguni, Kiyofumi Ogino, Hisao Ikeda
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Publication number: 20180331357Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.Type: ApplicationFiled: July 11, 2018Publication date: November 15, 2018Inventors: Nobuhiro INOUE, Kiyofumi OGINO
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Patent number: 10128498Abstract: A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.Type: GrantFiled: May 26, 2016Date of Patent: November 13, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazutaka Kuriki, Nobuhiro Inoue, Kiyofumi Ogino
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Publication number: 20180309119Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 ?m and less than or equal to 7 ?m.Type: ApplicationFiled: July 2, 2018Publication date: October 25, 2018Inventors: Kiyofumi OGINO, Yumiko YONEDA (Former SAITO), Rika YATABE, Nobuhiro INOUE
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Publication number: 20180248169Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.Type: ApplicationFiled: April 27, 2018Publication date: August 30, 2018Inventor: Kiyofumi OGINO
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Patent number: 10032918Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film.Type: GrantFiled: April 17, 2017Date of Patent: July 24, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Daisuke Matsubayashi, Ryo Tokumaru, Yasumasa Yamane, Kiyofumi Ogino, Taichi Endo, Hajime Kimura
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Patent number: 10026959Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.Type: GrantFiled: May 18, 2015Date of Patent: July 17, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Nobuhiro Inoue, Kiyofumi Ogino
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Publication number: 20180184520Abstract: A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low coat and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.Type: ApplicationFiled: February 9, 2018Publication date: June 28, 2018Inventors: Shunpei Yamazaki, Teppei Oguni, Kiyofumi Ogino, Hisao Ikeda