Patents by Inventor Kiyohiko Maeda
Kiyohiko Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7871938Abstract: Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber which is in a heated state to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein the hydrogen-containing gas is supplied from a plurality of locations of a region corresponding to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.Type: GrantFiled: March 13, 2009Date of Patent: January 18, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Takashi Ozaki, Kazuhiro Yuasa, Kiyohiko Maeda
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Patent number: 7858534Abstract: A semiconductor device manufacturing method comprises a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.Type: GrantFiled: August 7, 2008Date of Patent: December 28, 2010Assignee: Hitachi Kokusai Electric Inc.Inventor: Kiyohiko Maeda
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Patent number: 7795143Abstract: A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel openinType: GrantFiled: August 9, 2007Date of Patent: September 14, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Kiyohiko Maeda, Takeo Hanashima, Masanao Osanai
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Publication number: 20100190355Abstract: A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel openinType: ApplicationFiled: March 26, 2010Publication date: July 29, 2010Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kiyohiko Maeda, Takeo Hanashima, Masanao Osanai
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Publication number: 20090305517Abstract: A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type betweeType: ApplicationFiled: March 27, 2007Publication date: December 10, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Sadao Nakashima, Takahiro Maeda, Kiyohiko Maeda, Kenji Kameda, Yushin Takasawa
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Publication number: 20090258504Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a reaction vessel configured to process a substrate, a heater configured to heat an inside of the reaction vessel, a gas supply line configured to supply gas into the reaction vessel, a first valve installed at the gas supply line, a flow rate controller installed at the gas supply line, a main exhaust line configured to exhaust the inside of the reaction vessel, a second valve installed at the main exhaust line, a slow exhaust line installed at the main exhaust line, a third valve installed at the slow exhaust line, a throttle part installed at the slow exhaust line, a vacuum pump installed at the main exhaust line, and a controller configured to control the valves and the flow rate controller.Type: ApplicationFiled: April 9, 2009Publication date: October 15, 2009Inventors: Naoharu NAKAISO, Kiyohiko MAEDA, Masayuki YAMADA
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Publication number: 20090239387Abstract: Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber which is in a heated state to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein the hydrogen-containing gas is supplied from a plurality of locations of a region corresponding to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.Type: ApplicationFiled: March 13, 2009Publication date: September 24, 2009Inventors: Takashi OZAKI, Kazuhiro Yuasa, Kiyohiko Maeda
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Publication number: 20090233452Abstract: Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein in the oxidation-processing, the hydrogen-containing gas is supplied from a plurality of locations of a region which is in proximity to the inner wall of the processing chamber and which corresponds to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.Type: ApplicationFiled: March 13, 2009Publication date: September 17, 2009Inventors: Takashi Ozaki, Kazuhiro Yuasa, Kiyohiko Maeda
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Publication number: 20090188431Abstract: A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.Type: ApplicationFiled: March 9, 2009Publication date: July 30, 2009Inventors: Takashi Ozaki, Tomoshi Taniyama, Hiroshi Unami, Kiyohiko Maeda, Shinya Morita, Yoshikazu Takashima, Sadao Hisakado
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Publication number: 20090163040Abstract: A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel openinType: ApplicationFiled: August 9, 2007Publication date: June 25, 2009Applicant: Hitachi Kokusai Electric Inc.Inventors: Kiyohiko Maeda, Takeo Hanashima, Masanao Osanai
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Patent number: 7534730Abstract: Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1) carried in the process chamber (4), a step for supplying a hydrogen-containing gas from at least one location corresponding to a position within the region where substrates (1) are placed in the process chamber (4), a step for oxidizing the substrates (1) by reacting the oxygen-containing gas with the hydrogen-containing gas in the process chamber (4), and a step for carrying the thus-processed substrates (1) out of the process chamber (4).Type: GrantFiled: August 25, 2004Date of Patent: May 19, 2009Assignee: Hitachi Kokusai Electric In.Inventors: Takashi Ozaki, Kazuhiro Yuasa, Kiyohiko Maeda
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Publication number: 20090117752Abstract: A high quality interface is formed at a low oxygen-carbon density between a substrate and a thin film while preventing heat damage on the substrate and increase of thermal budget. This method includes a step of loading a wafer into a reaction furnace, a step of pretreating the wafer in the reaction furnace, a step of performing a main processing of the pretreated wafer in the reaction furnace, and a step of unloading the wafer from the reaction furnace after the main processing. Hydrogen gas is continuously supplied to the reaction furnace in the period from the end of the pretreating step to the start of the main processing and at least during vacuum-exhausting an interior of the reaction furnace.Type: ApplicationFiled: November 2, 2005Publication date: May 7, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takashi Ozaki, Osamu Kasahara, Takaaki Noda, Kiyohiko Maeda, Atsushi Moriya, Minoru Sakamoto
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Publication number: 20090087964Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.Type: ApplicationFiled: March 15, 2007Publication date: April 2, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki, Akihito Yoshino, Yasunobu Koshi, Yuji Urano
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Patent number: 7494941Abstract: At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber. Provided are a step of loading at least one wafer 200 into a reaction chamber 201, a step of introducing reaction gas into the reaction chamber 201, and exhausting an inside of the reaction chamber 201, thereby processing the wafer 200, and a step of unloading the processed wafer 200 from the reaction chamber 201. In the step of loading the wafer 200 or/and in the step of unloading the wafer 200, the inside of the reaction chamber 201 is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the wafer 200.Type: GrantFiled: November 19, 2004Date of Patent: February 24, 2009Assignee: Hitachi Kokusai Electric Inc.Inventors: Osamu Kasahara, Kiyohiko Maeda, Akihiko Yoneda
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Publication number: 20090042408Abstract: A semiconductor device manufacturing method comprises a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.Type: ApplicationFiled: August 7, 2008Publication date: February 12, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventor: Kiyohiko MAEDA
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Patent number: 7432215Abstract: A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF3 gas flowing into the reaction container.Type: GrantFiled: June 12, 2007Date of Patent: October 7, 2008Assignee: Kokusai Electric Co., Ltd.Inventors: Norikazu Mizuno, Kiyohiko Maeda
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Publication number: 20080090415Abstract: There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.Type: ApplicationFiled: October 10, 2007Publication date: April 17, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki
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Publication number: 20070238292Abstract: A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF3 gas flowing into the reaction container.Type: ApplicationFiled: June 12, 2007Publication date: October 11, 2007Applicant: KOKUSAI ELECTRIC CO., LTD.Inventors: Norikazu MIZUNO, Kiyohiko MAEDA
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Publication number: 20070157882Abstract: Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1) carried in the process chamber (4), a step for supplying a hydrogen-containing gas from at least one location corresponding to a position within the region where substrates (1) are placed in the process chamber (4), a step for oxidizing the substrates (1) by reacting the oxygen-containing gas with the hydrogen-containing gas in the process chamber (4), and a step for carrying the thus-processed substrates (1) out of the process chmaber (4).Type: ApplicationFiled: August 25, 2004Publication date: July 12, 2007Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takashi Ozaki, Kazuhiro Yuasa, Kiyohiko Maeda
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Publication number: 20070032045Abstract: At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber. Provided are a step of loading at least one wafer 200 into a reaction chamber 201, a step of introducing reaction gas into the reaction chamber 201, and exhausting an inside of the reaction chamber 201, thereby processing the wafer 200, and a step of unloading the processed wafer 200 from the reaction chamber 201. In the step of loading the wafer 200 or/and in the step of unloading the wafer 200, the inside of the reaction chamber 201 is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the wafer 200.Type: ApplicationFiled: November 19, 2004Publication date: February 8, 2007Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Osamu Kasahara, Kiyohiko Maeda, Akihiko Yoneda