Patents by Inventor Kiyonobu Kubota

Kiyonobu Kubota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7498294
    Abstract: The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.
    Type: Grant
    Filed: February 9, 2005
    Date of Patent: March 3, 2009
    Assignee: JSR Corporation
    Inventors: Tomohisa Konno, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7378349
    Abstract: Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
    Type: Grant
    Filed: April 11, 2005
    Date of Patent: May 27, 2008
    Assignee: JSR Corporation
    Inventors: Tomohisa Konno, Hirotaka Shida, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
  • Publication number: 20050227451
    Abstract: Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
    Type: Application
    Filed: April 11, 2005
    Publication date: October 13, 2005
    Applicant: JSR Corporation
    Inventors: Tomohisa Konno, Hirotaka Shida, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
  • Publication number: 20050176606
    Abstract: The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.
    Type: Application
    Filed: February 9, 2005
    Publication date: August 11, 2005
    Applicant: JSR Corporation
    Inventors: Tomohisa Konno, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 6527818
    Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: March 4, 2003
    Assignee: JSR Corporation
    Inventors: Masayuki Hattori, Kiyonobu Kubota, Kazuo Nishimoto, Nobuo Kawahashi
  • Patent number: 6409780
    Abstract: Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
    Type: Grant
    Filed: January 14, 2000
    Date of Patent: June 25, 2002
    Assignees: Kabushiki Kaisha Toshiba, JSR Corporation
    Inventors: Hiroyuki Yano, Nobuo Hayasaka, Katsuya Okumura, Akira Iio, Masayuki Hattori, Kiyonobu Kubota
  • Publication number: 20010039766
    Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.
    Type: Application
    Filed: February 8, 2001
    Publication date: November 15, 2001
    Applicant: JSR Corporation
    Inventors: Masayuki Hattori, Kiyonobu Kubota, Kazuo Nishimoto, Nobuo Kawahashi
  • Patent number: 4547200
    Abstract: Slurry composition comprising a solid fuel powder, water and a compound having in its molecule a tricyclodecane or tricyclodecene skeleton and a sulfonic acid group attached to the skeleton.
    Type: Grant
    Filed: October 26, 1984
    Date of Patent: October 15, 1985
    Assignee: Japan Synthetic Rubber Co., Ltd.
    Inventors: Hironobu Shinohara, Kiyonobu Kubota, Yoshinori Yoshida