Patents by Inventor Kiyoshi Hayashi
Kiyoshi Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8759007Abstract: The present invention provides a method for detecting modified LDL, abnormal cells or bacteria using an intermolecular interaction analysis method, in which a region involved in ligand recognition by a receptor is expressed, without modification or as a biotinylated protein, in cells or in a test tube, and thereafter, the expressed region or the expressed biotinylated protein is immobilized via avidin or streptavidin to a solid phase while the orientation thereof is maintained, and the immobilized protein is utilized; and a kit for detecting the modified LDL or the like.Type: GrantFiled: December 11, 2009Date of Patent: June 24, 2014Assignee: National Food Research InstituteInventors: Sachiko Machida, Kiyoshi Hayashi, Ken Tokuyasu, Yoshikiyo Sakakibara, Shigeru Matsunaga
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Patent number: 8754471Abstract: There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.Type: GrantFiled: March 4, 2011Date of Patent: June 17, 2014Assignee: Renesas Electronics CorporationInventors: Toshiaki Iwamatsu, Kozo Ishikawa, Masashi Kitazawa, Kiyoshi Hayashi, Takahiro Maruyama, Masaaki Shinohara, Kenji Kawai
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Publication number: 20140054928Abstract: A floor panel, a rear end member which is provided at a rear portion of the floor panel and extends in a vehicle width direction, and a rear end trim which covers a surface on a baggage-compartment side of the rear end member are provided. A step portion is formed at a connection portion connecting an upper portion of the rear end member and a lower portion of the rear end member which is positioned in front of and below the upper portion. An opening is formed at the step portion. An attachment portion, by which the rear end trim is attachable to the rear end member, is provided at the rear end trim. This attachment portion is configured to be inserted from above into the opening for engagement.Type: ApplicationFiled: July 29, 2013Publication date: February 27, 2014Applicant: MAZDA MOTOR CORPORATIONInventors: Takashi NARAHARA, Kiyoshi HAYASHI, Hayato MIYAZAKI
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Publication number: 20130010428Abstract: A fixing spring for fixing an electronic component to a heat sink member includes a seat part that extends in a horizontal direction, a holding part that is provided to extend from one of two first sides of the seat part that face each other toward the horizontal direction of the first sides and that presses the electronic component onto the heat sink member, a leg part that is provided to extend substantially perpendicularly downwardly from one of two second sides of the seat part that face each other, a leg part body that extends from the leg part, and a claw part that is provided at a tip end of the leg body. The holding part biases the electronic component downwardly and thereby fixes the electronic component on the heat sink member when the claw part is engaged with the engagement hole.Type: ApplicationFiled: July 5, 2012Publication date: January 10, 2013Applicant: TDK CorporationInventor: Kiyoshi HAYASHI
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Publication number: 20120309157Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.Type: ApplicationFiled: August 16, 2012Publication date: December 6, 2012Inventors: Toshiaki IWAMATSU, Takashi TERADA, Hirofumi SHINOHARA, Kozo ISHIKAWA, Ryuta TSUCHIYA, Kiyoshi HAYASHI
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Patent number: 8308622Abstract: A centrifugally cast composite roll comprising an outer layer having a composition comprising by mass 2.5-9% of C, 0.1-3.5% of Si, 0.1-3.5% of Mn, and 11-40% of V, the balance being Fe and inevitable impurities; an intermediate layer made of a high-speed steel alloy, which is formed inside the outer layer; and an inner layer made of cast iron or steel, which is formed inside the intermediate layer.Type: GrantFiled: March 13, 2006Date of Patent: November 13, 2012Assignee: Hitachi Metals, Ltd.Inventors: Kiyoshi Furushima, Shunji Matsumoto, Ryota Honda, Kiyoshi Hayashi, Takashi Honda, Masatsugu Uchida, Seiji Oyama, Takuya Osue
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Patent number: 8269288Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.Type: GrantFiled: October 17, 2008Date of Patent: September 18, 2012Assignee: Renesas Electronics CorporationInventors: Toshiaki Iwamatsu, Takashi Terada, Hirofumi Shinohara, Kozo Ishikawa, Ryuta Tsuchiya, Kiyoshi Hayashi
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Publication number: 20120218712Abstract: A spring fixture includes a base, first and second holding parts extending in opposite lateral directions from the base, and a height registration part extending downwardly from the base relative to the lateral directions. The heat sink member has a height adjustment hole at a location corresponding to the height registration part. The height registration part is inserted through the height adjustment hole so that electronic components are fixed to a heat sink member by the first and second holding parts. A distance between the base and the heat sink member can be changed by varying a size of the height adjustment hole to accommodate varying heights of the electronic components. Therefore, the spring fixture can be used for various types of the electronic components with different heights without changing the designs and manufacturing methods for the spring fixture.Type: ApplicationFiled: February 27, 2012Publication date: August 30, 2012Applicant: TDK CORPORATIONInventor: Kiyoshi HAYASHI
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Patent number: 8156651Abstract: A method for producing an outer layer for a roll having a structure having MC carbide dispersed at an area ratio of 20-60%, comprising the steps of (1) centrifugally casting a melt having a composition comprising, by mass, 2.2-6.0% of C, 0.1-3.5% of Si, 0.1-3.5% of Mn, and 8-22% of V, the balance being Fe and inevitable impurity elements, to produce a cylindrical body comprising an inner layer having concentration MC carbide, an MC-carbide-poor outer layer, and a concentration gradient layer between the inner layer and the outer layer, in which the area ratio of MC carbide changes, and (2) cutting the cylindrical body to a depth at which the area ratio of MC carbide is 20% or more.Type: GrantFiled: September 13, 2005Date of Patent: April 17, 2012Assignee: Hitachi Metals, Ltd.Inventors: Kiyoshi Furushima, Shunji Matsumoto, Ryota Honda, Kiyoshi Hayashi, Takashi Honda, Masatsugu Uchida
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Patent number: 8039143Abstract: To provide an electrode unit for a prismatic battery capable of increasing the output of the battery while suppressing the battery internal resistance value and improving the degree of freedom of the size of the electrode plate. An electrode unit for a prismatic battery including an electrode group in which positive electrode plates and negative electrode plates in an almost rectangular shape are alternately stacked with separators interposed therebetween. In each of the positive electrode plate and the negative electrode plate, core material exposed portions are formed at least on two side edges. The positive electrode plates and the negative electrode plate are stacked such that their core material exposed portions are directed not to overlap each other in the stack direction.Type: GrantFiled: October 25, 2006Date of Patent: October 18, 2011Assignee: Panasonic EV Energy Co., Ltd.Inventors: Hideki Kasahara, Kiyoshi Hayashi
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Publication number: 20110215423Abstract: There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.Type: ApplicationFiled: March 4, 2011Publication date: September 8, 2011Inventors: Toshiaki IWAMATSU, Kozo ISHIKAWA, Masashi KITAZAWA, Kiyoshi HAYASHI, Takahiro MARUYAMA, Masaaki SHINOHARA, Kenji KAWAI
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Publication number: 20110031552Abstract: To provide, in FINFET whose threshold voltage is determined essentially by the work function of a gate electrode, a technology capable of adjusting the threshold voltage of FINFET without changing the material of the gate electrode. FINFET is formed over an SOI substrate comprised of a substrate layer, a buried insulating layer formed over the substrate layer, and a silicon layer formed over the buried insulating layer. The substrate layer has therein a first semiconductor region contiguous to the buried insulating layer. The silicon layer of the SOI substrate is processed into a fin. A ratio of the height of the fin to the width of the fin is adjusted to fall within a range of from 1 or greater but not greater than 2. In addition, a voltage can be applied to the first semiconductor region.Type: ApplicationFiled: August 6, 2010Publication date: February 10, 2011Inventors: Toshiaki IWAMATSU, Kozo Ishikawa, Kiyoshi Hayashi
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Patent number: 7842413Abstract: A rechargeable battery reducing internal resistance and equalizing the distribution of current flow in an electrode plate assembly. A plurality of battery jars are connected to one another through partition walls. A power generation element including an electrode plate assembly, in which a cathode plate and an anode plate are stacked together with a separator arranged in between, and collector plates joined to opposite ends of the electrode plate assembly are accommodated in each battery jar. The collector plates on opposite sides of the partition wall formed between two adjacent battery jars are connected to each other. Connection holes are formed in the partition wall at a plurality of locations. Connection projections, which project from the collector plates, are fitted into the connection holes and welded. The connection projections have distal ends that are in contact with each other.Type: GrantFiled: October 26, 2006Date of Patent: November 30, 2010Assignee: Panasonic EV Energy Co., Ltd.Inventors: Kiyoshi Hayashi, Hideki Kasahara
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Publication number: 20100167340Abstract: The present invention provides a method for detecting modified LDL, abnormal cells or bacteria using an intermolecular interaction analysis method, in which a region involved in ligand recognition by a receptor is expressed, without modification or as a biotinylated protein, in cells or in a test tube, and thereafter, the expressed region or the expressed biotinylated protein is immobilized via avidin or streptavidin to a solid phase while the orientation thereof is maintained, and the immobilized protein is utilized; and a kit for detecting the modified LDL or the like.Type: ApplicationFiled: December 11, 2009Publication date: July 1, 2010Applicant: NATIONAL FOOD RESEARCH INSTITUTEInventors: Sachiko Machida, Kiyoshi Hayashi, Ken Tokuyasu, Yoshikiyo Sakakibara, Shigeru Matsunaga
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Publication number: 20090233173Abstract: Novel cobalt oxyhydroxide is provided with which a positive electrode of an alkaline storage battery having conductivity higher than that of the conventional positive electrodes can be produced, and a method for producing the same is provided. Furthermore, an alkaline storage battery having a high capacity and that can be manufactured easily is provided. The cobalt oxyhydroxide is used for a positive electrode of an alkaline storage battery, in which a first peak corresponding to a crystal plane (003) of the cobalt oxyhydroxide and a second peak corresponding to a crystal plane (012) of the cobalt oxyhydroxide are present on a diffraction line obtained by X-ray diffraction measurement when employing copper K? radiation as a radiation source, a half-power band width of the first peak is 0.6° or less, and a value obtained by dividing a strength of the first peak by a strength of the second peak is 10 or less.Type: ApplicationFiled: May 19, 2009Publication date: September 17, 2009Applicants: PANASONIC CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Kojiro ITO, Kiyoshi HAYASHI, Toshihiro YAMADA
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Publication number: 20090101977Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.Type: ApplicationFiled: October 17, 2008Publication date: April 23, 2009Inventors: Toshiaki Iwamatsu, Takashi Terada, Hirofumi Shinohara, Kozo Ishikawa, Ryuta Tsuchiya, Kiyoshi Hayashi
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Publication number: 20090092852Abstract: A centrifugally cast composite roll comprising an outer layer having a composition comprising by mass 2.5-9% of C, 0.1-3.5% of Si, 0.1-3.5% of Mn, and 11-40% of V, the balance being Fe and inevitable impurities; an intermediate layer made of a high-speed steel alloy, which is formed inside the outer layer; and an inner layer made of cast iron or steel, which is formed inside the intermediate layer.Type: ApplicationFiled: March 13, 2006Publication date: April 9, 2009Applicant: Hitachi Metals, Ltd.Inventors: Kiyoshi Furushima, Shunji Matsumoto, Ryota Honda, Kiyoshi Hayashi, Takashi Honda, Masatsugu Uchida, Seiji Oyama, Takuya Osue
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Publication number: 20080226936Abstract: A method for producing an outer layer for a roll having a structure having MC carbide dispersed at an area ratio of 20-60%, comprising the steps of (1) centrifugally casting a melt having a composition comprising, by mass, 2.2-6.0% of C, 0.1-3.5% of Si, 0.1-3.5% of Mn, and 8-22% of V, the balance being Fe and inevitable impurity elements, to produce a cylindrical body comprising an inner layer having concentration MC carbide, an MC-carbide-poor outer layer, and a concentration gradient layer between the inner layer and the outer layer, in which the area ratio of MC carbide changes, and (2) cutting the cylindrical body to a depth at which the area ratio of MC carbide is 20% or more.Type: ApplicationFiled: September 13, 2002Publication date: September 18, 2008Applicant: Hitachi Metals, Ltd.Inventors: Kiyoshi Furushima, Shunji Matsumoto, Ryota Honda, Kiyoshi Hayashi, Takashi Honda, Masatsugu Uchida
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Publication number: 20070099075Abstract: A rechargeable battery reducing internal resistance and equalizing the distribution of current flow in an electrode plate assembly. A plurality of battery jars are connected to one another through partition walls. A power generation element including an electrode plate assembly, in which a cathode plate and an anode plate are stacked together with a separator arranged in between, and collector plates joined to opposite ends of the electrode plate assembly are accommodated in each battery jar. The collector plates on opposite sides of the partition wall formed between two adjacent battery jars are connected to each other. Connection holes are formed in the partition wall at a plurality of locations. Connection projections, which project from the collector plates, are fitted into the connection holes and welded. The connection projections have distal ends that are in contact with each other.Type: ApplicationFiled: October 26, 2006Publication date: May 3, 2007Applicant: PANASONIC EV ENERGY CO., LTD.Inventors: Kiyoshi HAYASHI, Hideki KASAHARA
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Publication number: 20070092791Abstract: A rechargeable battery for eliminating the need for attaching a joining metal member to a collector plate, while lowering the cost for forming collector plates and lowering resistance in the collector plate and in a joining portion. The rechargeable battery includes an electrode plate group formed by alternately superimposing positive electrode plates having positive electrode plate collector portions and negative electrode plates having negative electrode plate collector portions with separators arranged therebetween. Collector plates, formed by metal plates, are joined to the corresponding positive and negative electrode plate collector portions. Each collector plate is bent at a predetermined portion to form a joining portion having a ridge-shaped cross-section. The joining portion of each collector plate is pressed into the edge of the corresponding electrode plate collector portion and joined to the electrode plate collector portion by performing resistance welding.Type: ApplicationFiled: October 19, 2006Publication date: April 26, 2007Applicant: PANASONIC EV ENERGY CO., LTD.Inventors: Kiyoshi HAYASHI, Hideki KASAHARA