Abstract: An electrophoresis dispersion liquid includes first electrophoretic particle of a scattering system having an ionic group on a surface thereof; second electrophoretic particle of a coloring system having a polarization group on the surface thereof; and a dispersion medium. It is preferable that the ionic group is an acidic group, and further includes a ring structure that forms an acidic group and a salt. It is preferable that the polarization group is an organic group having a main skeleton, and a substituent bonded to the main skeleton.

Abstract: According to an aspect, a display device includes an image display unit in which pixels each including a plurality of sub-pixels are arranged in a matrix, and a color converting unit that performs color conversion to reduce power consumption in the image display unit. The color converting unit does not perform the color conversion when total power consumption obtained by adding up the power consumption in the image display unit and power consumption in the color converting unit in a case where the color conversion is performed exceeds the power consumption in the image display unit in a case where the color conversion is not performed.

Abstract: A high powered current generator for electromagnetic inspection of hydrocarbon pipelines from an AC stabilized with rectangular waveform and whose measurements and interpretation are used for evaluating the condition of the lining of the pipelines of five main modules: self-programmable regulated voltage power source module; power source reference decoupling module; H Bridge inverter module; feedback module, and control and processing module. The generator was specifically designed as part of the instrumentation of (TI EMS); which supplies an electric current in the pipeline to produce electromagnetic radiation along the hydrocarbon pipeline. This energy is detected by antennas for obtaining the location of the pipeline and the electric current flowing therein. The generator produces an alternating current at a frequency that can be set within the range of 0.1 Hz to 1 KHz. However, to simplify the job of the operating personnel, default values of 0.1, 0.2, 0.

Abstract: An organic transistor includes an insulating substrate, a gate electrode on the substrate, a gate insulating layer disposed over the substrate and the gate electrode, a source and a drain electrode on the gate insulating layer, a nonpolar macromolecular insulating underlayer disposed on the gate insulating layer at least between the source electrode and the drain electrode, and an organic semiconductor layer disposed on the source electrode and the drain electrode and on the insulating underlayer between the source electrode and the drain electrode.

Abstract: A semiconductor device including: a substrate; a first electrode and a second electrode, each being formed on the substrate; a first region that is positioned between the first electrode and the second electrode; a second region that is connected with the first region; an organic semiconductor layer that is provided in the first region and in the second region; and a receptor of the organic semiconductor layer, the receptor being provided so as to surround the second region and having an opening that extends from the second region to the first region.

Abstract: A predetermined speed control pattern B is sct. In a mold clamping process, in a mold closing section Zm, mold closing control is performed at a mold closing speed Vm, and based on a current mold closing speed Vd and a current mold closing position Xd, which are both detected, a deceleration starting position Xmc of the deceleration section Zmd, where the current mold closing speed Vd becomes a zero (O) at a virtual stop position Xc, is sequentially forecasted at each predetermined time interval by calculation. Upon reaching the deceleration starting position Xmc the deceleration section Zmd is started, and in the deceleration section Zmd, based on the detected current mold closing position Xd, a speed command value Dm corresponding to the speed control pattern B is obtained sequentially by calculation, and according to the speed command value Dm deceleration control is performed.

Abstract: A predetermined speed control pattern A is set. In controlling mold opening, in the mold opening section Zm, mold opening control is performed at the mold opening speed Vm, and based on a current mold opening speed Vd and a current mold opening position Xd, which are both detected, a deceleration starting position Xmc of the deceleration section Zmd where a current mold opening speed Vd becomes a zero (O) at a virtual stop position Xso is sequentially forecasted at each predetermined time interval by calculation. Upon reaching the deceleration starting position Xmc the deceleration section Zmd is started, and in the deceleration section Zmd, based on the detected current mold opening position Xd, a speed command value Dm corresponding to the speed control pattern A is obtained sequentially by calculation, and according to the speed command value Dm deceleration control is performed. Upon reaching a last-transition speed Vc, a predetermined stop controlling processing is performed.

Abstract: An injection molding machine 1 includes mode selection means 8 that can selectively switch between a first control mode M1 and a second control mode M2. In the first control mode M1, control is performed by a first control system Cf in which a screw speed is controlled by feedback with a speed detection value Vd that is detected by screw speed detection means 5 and a speed target value Vfc, and an injection pressure is controlled by feedback with a pressure detection value Pid that is detected by injection pressure detection means 6 and a pressure target value Pic, whereas, in the second control mode M2, control is performed by a second control system Cs in which the screw speed is open-loop controlled with a speed target value Vsc, and a pump pressure is controlled by feedback with a pressure detection value Ppd that is detected by pump pressure detection means 7 and that is related to the pump pressure of the hydraulic pump 4 and a pressure target value Ppc.

Abstract: A method for producing an active-matrix substrate including a board, pixels, thin-film transistors that switch the pixels, and source lines and gate lines electrically connected to the thin-film transistors includes forming a conduction portion that provides electrical connection between the source lines and the gate lines using an organic conductive material at the same time as forming either the source lines or the gate lines; and breaking the electrical connection provided by the conduction portion.

Abstract: An organic transistor includes an insulating substrate, a gate electrode on the substrate, a gate insulating layer disposed over the substrate and the gate electrode, a source and a drain electrode on the gate insulating layer, a nonpolar macromolecular insulating underlayer disposed on the gate insulating layer at least between the source electrode and the drain electrode, and an organic semiconductor layer disposed on the source electrode and the drain electrode and on the insulating underlayer between the source electrode and the drain electrode.

Abstract: A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.

Abstract: A display apparatus includes a substrate; a display area including a plurality of pixels provided on the substrate; a switching element provided for each of the pixels, the switching element including a first semiconductor layer formed of a first organic semiconductor; and a humidity sensor provided on the substrate and outside the display area. The humidity sensor includes, as a humidity sensitive layer, a second semiconductor layer formed of a second organic semiconductor having a correlation in terms of electric characteristics with the first organic semiconductor.

Abstract: A semiconductor device including: a substrate; a first electrode and a second electrode, each being formed on the substrate; a first region that is positioned between the first electrode and the second electrode; a second region that is connected with the first region; an organic semiconductor layer that is provided in the first region and in the second region; and a receptor of the organic semiconductor layer, the receptor being provided so as to surround the second region and having an opening that extends from the second region to the first region.

Abstract: Test molding is performed by sequentially clamping a mold 2 with a mold clamping force (100%, 80%, 70%, . . . ) obtained by sequentially lowering a mold clamping force by a predetermined amount from the maximum mold clamping force (100%); with mold position sensors 4 provided on outer surfaces 3cf and 3mf of a fixed platen 3c supporting a fixed mold 2c of the mold 2 and a movable platen 3m supporting a movable mold 2m of the mold 2, a relative position (mold position Xc) of the movable platen 3m with respect to the fixed platen 3c in an injection process is detected; and, when at least a variation that meets predetermined conditions is produced on the mold position Xc, a mold clamping force obtained by increasing a mold clamping force at a time of occurrence of the variation by a predetermined amount is set as a proper mold clamping force Fs.

Abstract: When test molding is performed by sequentially clamping a mold with a mold clamping force (100%, 80%, 70%, . . .) obtained by sequentially lowering a mold clamping force by a predetermined amount from the maximum mold clamping force (100%), a mold clamping pressure Pc in an injection process is detected and a plurality of different monitored elements (Pc, Pcd and Per) corresponding to the variation of the mold clamping pressure Pc are monitored, and thus it is detected that at least one of the monitored elements is varied to exceed a predetermined threshold, a mold clamping force obtained by increasing a mold clamping force at the time of the production of the variation by a predetermined amount is set as a proper mold clamping force Fs.

Abstract: A method for manufacturing an organic device includes disposing a solution containing a conductive organic material in a first region on a substrate, drying the solution to form a conductive organic film in the first region, and irradiating the conductive organic film formed in a second region other than the first region with light to decrease the conductivity of the conductive organic film.

Abstract: In a hydraulic drive device (1) for an injection molding machine (M) that has a pressure control valve (Vs) incorporating a pressure sensor (2) for detecting a hydraulic pressure and a feedback control circuit (Cs) for controlling the hydraulic pressure by feedback based on a pressure detection value (Spd) obtained from the pressure sensor (2) and a pressure instruction value (Spc) fed from a molding machine controller (3), the molding machine controller (3) includes a second feedback control circuit (Cm) for correcting the pressure instruction value (Spc) that is fed to the pressure control valve (Vs) based on the pressure detection value (Spd) fed from the pressure control valve (Vs) and the pressure instruction value (Spci) obtained from the interior of the molding machine controller (3).

Abstract: The present invention comprises a speed feedback control system for carrying out speed feedback control on the basis of a speed detected value Vd obtained by converting a position detected value Xd obtained from a screw position sensor 4, a pressure feedback control system for carrying out a pressure feedback control on the basis of a pressure detected value Pdb obtained from an injection pressure sensor 6b, and a VP switching control function portion Fc for carrying out switching from a speed control region to a pressure control region Zp when a pressure deviation Ep between a preset pressure set value Ps and the pressure detected value Pdb becomes a preset switching determination value Eps or less and carrying out the switching to the pressure control region Zp after control of a speed command value in the speed control region Zv by a predetermined control pattern Dp at this switching.

Abstract: A thin film transistor includes a source electrode and a drain electrode which are disposed to face each other, an organic semiconductor layer provided at least between the source electrode and the drain electrode, a plurality of gate lines extending over the source electrode, the organic semiconductor layer, and the drain electrode, and a gate insulating layer interposed between the source electrode, the drain electrode, and the organic semiconductor layer and the plurality of gate lines.

Abstract: When test molding is performed by sequentially clamping a mold with a mold clamping force (100%, 80%, 70%, ...) obtained by sequentially lowering a mold clamping force by a predetermined amount from the maximum mold clamping force (100%), a mold clamping pressure Pc in an injection process is detected and a plurality of different monitored elements (Pc, Pcd and Per) corresponding to the variation of the mold clamping pressure Pc are monitored, and thus it is detected that at least one of the monitored elements is varied to exceed a predetermined threshold, a mold clamping force obtained by increasing a mold clamping force at the time of the production of the variation by a predetermined amount is set as a proper mold clamping force Fs.