Abstract: According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous existence of the light-emitting element section is equal to or higher than 10 lm/mm2 and equal to or lower than 100 lm/mm2. The thermal radiation member has an area equal to or larger than five times the area of the mounting region.

Abstract: A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.

Abstract: According to an embodiment, a light emitting device including a substrate, a plurality of semiconductor light emitting elements and a wavelength conversion layer is provided. The semiconductor light emitting elements are provided on the substrate. The wavelength conversion layer covers the semiconductor light emitting elements and converts a wavelength of light emitted from the semiconductor light emitting elements. A first distance between an upper surface of the wavelength conversion layer in a first region between two adjacent semiconductor light emitting elements in the semiconductor light emitting elements and the substrate is shorter than a second distance between the upper surface of the wavelength conversion layer and the substrate in a second region on the two adjacent semiconductor light emitting elements.

Abstract: A light-emitting device includes a substrate having a front surface on which a semiconductor light-emitting element is mounted. A front cover is provided which thermally contacts the front surface of the substrate at a periphery of the semiconductor light-emitting element and is disposed on a front side of the substrate. A heat conduction path is formed along which heat generated by the semiconductor light-emitting element is conducted in order of the substrate and the front cover and the heat is radiated from a front surface of the front cover, so that a heat radiation property from a front surface of the light-emitting device is improved.

Abstract: A luminaire includes a semiconductor light source having a light emission peak in a range of wavelength smaller than 480 nm and a phosphor excited by light radiated from the semiconductor light source to radiate light having wavelength equal to or larger than 480 nm. A spectrum of radiated light obtained by combining the light radiated from the semiconductor light source and the light radiated from the phosphor has a light emission peak in a range of wavelength equal to or larger than 610 nm and smaller than 650 nm. A ratio of radiation energy in a range of wavelength equal to or larger than 650 nm and equal to or smaller than 780 nm to radiation energy in a range of wavelength equal to or larger than 600 nm and smaller than 650 nm is equal to or lower than 35%. A color gamut area ratio exceeds 100%.

Abstract: According to one embodiment, the light-emitting apparatus is provided with a substrate, a plurality of light-emitting devices, and a phosphor layer. The plurality of light-emitting devices are mounted on the substrate. The phosphor layer is formed of a translucent resin containing a phosphor and includes a phosphor portion that is formed in a convex shape and covers a predetermined number of the light-emitting device. Bases of the adjacent phosphor portions are formed by being linked with one another.

Abstract: A luminaire includes a semiconductor light source having a light emission peak in a range of wavelength smaller than 480 nm and a phosphor excited by light radiated from the semiconductor light source to radiate light having wavelength equal to or larger than 480 nm. A spectrum of radiated light obtained by combining the light radiated from the semiconductor light source and the light radiated from the phosphor has a light emission peak in a range of wavelength equal to or larger than 610 nm and smaller than 650 nm. A ratio of radiation energy in a range of wavelength equal to or larger than 650 nm and equal to or smaller than 780 nm to radiation energy in a range of wavelength equal to or larger than 600 nm and smaller than 650 nm is equal to or lower than 35%. A color gamut area ratio exceeds 100%.

Abstract: According to one embodiment, a light emitting device which is attached to an illumination apparatus and radiates light having a correlated color temperature of 2900 to 3600K is provided. The light emitting device includes a substrate, blue light emitting LED elements and red light emitting LED elements mounted on the substrate, and a wavelength converting unit. The red light emitting LED elements have a luminous intensity of 0.2 to 2.5 times as large as that of the blue light emitting LED elements at normal use temperature in a state where the light emitting device is attached to the illumination apparatus. The wavelength converting unit is excited by light emitted from the blue light emitting LED elements and converts the light to light having a peak wavelength within a range of 500 to 600 nm.

Abstract: To improve an angular color difference and emit uniform illumination light. According to an embodiment, a light-emitting device in an embodiment includes a light-emitting module (15). The light-emitting module (15) includes a substrate (21), a plurality of light-emitting elements (45) made of semiconductor, and a plurality of sealing members (54). The light-emitting elements (45) are disposed on the substrate (21). The sealing members (54) contain, as a main component, translucent resin mixed with a phosphor. The sealing members (54) are heaped up from the bottom surfaces thereof bonded on the substrate (21) and are each formed to bury a singularity or a plurality of the light-emitting elements (45). A ratio (H/D) of a diameter D of the bottom surfaces to height H of the heaps of the sealing members (54) is set to 0.22 to 1.0.

Abstract: A light-emitting device includes a substrate, and a plurality of light-emitting elements mounted on the substrate. The light-emitting elements are placed to meet conditions that the number B of light-emitting elements per unit area (cm2) of a mounting part is not less than 0.4 and a mean mounting density D is not less than 58 to not greater than 334, when a relationship of formula “D=A×B” is established, assuming D as a mean mounting density of light-emitting elements on a substrate, A as a current (mA) flowing through one light-emitting element, and B as the number of light-emitting elements per unit area (cm2) of a substantial mounting part for light-emitting elements.

Abstract: According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous exitance of the light-emitting element section is equal to or higher than 101 m/mm2 and equal to or lower than 1001 m/mm2. The thermal radiation member has an area equal to or larger than five times the area of the mounting region.

Abstract: A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.

Abstract: The light source unit is provided with a substrate and a decorative cover having thermal conductivity. The substrate includes a circuit pattern area, in which a plurality of LED chips are disposed, at the middle part thereof, has thermal conductivity, and transmits heat from the circuit pattern area to an area in the outer circumferential direction thereof. The decorative cover encloses the substrate, is electrically insulated from the circuit pattern area, and is thermally coupled to the surface side of the substrate at the periphery of the circuit pattern area by being face-contacted thereto. Heat of the substrate can be radiated by the decorative cover while securing an electric insulation property with respect to the circuit pattern area.

Abstract: A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.

Abstract: According to one embodiment, a wiring board includes a base assuming a flat plate shape, a wiring pattern provided in a position on one surface of the base and apart from a peripheral edge of the base, a first metal layer provided on the opposite side of the base side of the wiring pattern, and a second metal layer configured to cover the first metal layer and a sidewall of the wiring pattern.

Abstract: A light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.

Abstract: According to one embodiment, a light-emitting device comprises a substrate on which a plurality of light-emitting elements are arranged and mounted in two lines; and sealing members of two lines each sealing the plurality of light-emitting elements of each line. A distance between the lines of the sealing members is equal to 0.5 times or more but 2 times or less a width of the sealing member of each line.

Abstract: According to one embodiment, a light-emitting device comprises a substrate on a surface of which a light-emitting element is mounted, a light reflection layer formed on a second area of the surface of the substrate other than a first area on which the light-emitting element is mounted, and a sealing member sealing the light-emitting element. An engagement protrusion part protruding toward the sealing member is provided at an edge part of the light reflection layer at which the light reflection layer is in contact with the area on which the light-emitting element is mounted. The engagement protrusion part juts out into the sealing member to prevent exfoliation of the sealing member.

Abstract: A light-emitting circuit is formed as a straight tube in a stable shape and capable of appropriately housing and holding an LED module and the like. The light-emitting circuit includes: a plurality of light-emitting elements configured to emit light; a substrate, functioning as an arrangement member, including an arrangement surface on which the plurality of light-emitting elements are arranged; and a substantially cylindrical lamp body including a translucent section at least in a part thereof, including the arrangement member disposed on the inside, and including a louver functioning as a projecting body projecting from an inner wall opposed to the arrangement surface and extending toward the arrangement surface.

Abstract: According to one embodiment, a wiring board device is provided in which even if the temperature of a ceramic board becomes high, the influence on a connector can be reduced and the occurrence of defects due to heat can be prevented. The wiring board device includes a common member. The ceramic board and the connector are placed on the common member. A wiring pattern of the ceramic board and the connector are electrically connected by wiring.