Patents by Inventor Kiyoshi Shimamura

Kiyoshi Shimamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340429
    Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: July 2, 2019
    Assignees: KOHA CO., LTD., TAMURA CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Daisuke Inomata, Hiroaki Sano, Seitaro Yoshida, Kazuo Aoki, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Publication number: 20180175281
    Abstract: A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by La3Ga5SiO14, and at least the content of the element M is insufficient for the stoichiometric composition represented by Ca3TaM3Si2O14. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.
    Type: Application
    Filed: June 1, 2016
    Publication date: June 21, 2018
    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Kiyoshi SHIMAMURA, Encarnacion Antonia GARCIA VILLORA, Isao SAKAGUCHI, Naoki OHASHI
  • Publication number: 20180044588
    Abstract: A flat plate-shaped phosphor member includes a plurality of granular single crystal phosphors, each of which including a YAG crystal as a mother crystal, the YAG crystal having a composition represented by a formula of Y3-x-yGdxCeyAl5O12-w (0.03?x?0.2, 0.003?y?0.2, ?0.2?w?0.2). Reduction of fluorescence intensity of the phosphor is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25° C. to 100° C.
    Type: Application
    Filed: October 4, 2017
    Publication date: February 15, 2018
    Inventors: Makoto WATANABE, Daisuke INOMATA, Kazuo AOKI, Kiyoshi SHIMAMURA, Encarnacion Antonia GARCIA VILLORA
  • Publication number: 20170186923
    Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.
    Type: Application
    Filed: March 16, 2017
    Publication date: June 29, 2017
    Applicants: KOHA CO., LTD., TAMURA CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Daisuke INOMATA, Hiroaki SANO, Seitaro YOSHIDA, Kazuo AOKI, Kiyoshi SHIMAMURA, Encarnacion Antonia GARCIA VILLORA
  • Publication number: 20170179346
    Abstract: A light-emitting device includes a light-emitting element to emit a bluish light, and a yellowish phosphor to absorb the light emitted by the light-emitting element and produce a yellowish fluorescence. The yellowish phosphor comprises a single crystal phosphor comprising a composition represented by a compositional formula (Y1-a-bLuaCeb)3+cAl5-cO12 (where 0?a?0.9994, 0.001?b?0.0067, ?0.016?c?0.315. Commission International de l'Eclairage (CIE) chromaticity coordinates x and y of an emission spectrum obtained by using CIE 1931 color-matching function to satisfy a relationship of ?0.4377x+0.7384?y??0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25° C. The single crystal phosphor is disposed off of the light-emitting element.
    Type: Application
    Filed: March 9, 2017
    Publication date: June 22, 2017
    Inventors: Daisuke INOMATA, Yusuke ARAI, Hiroaki SANO, Kazuo AOKI, Kiyoshi SHIMAMURA, Encarnacion Antonia GARCIA VILLORA
  • Patent number: 9634216
    Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: April 25, 2017
    Assignees: Koha Co., Ltd., Tamura Corporation, National Institute for Materials Science
    Inventors: Daisuke Inomata, Hiroaki Sano, Seitaro Yoshida, Kazuo Aoki, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Patent number: 9617470
    Abstract: An optical material used in a UV-excited yellow light-emitting material and an optical isolator, capable of emitting yellow light stably and highly efficiently even if a large current is fed to obtain the high luminance emission. The optical material used for the UV-excited yellow light-emitting material (2) and the optical isolator (210) is an oxide containing Ce, which is a terbium cerium aluminum garnet type single crystal wherein a part of terbium of a terbium aluminum garnet type single crystal is substituted by cerium. The ratio of number of moles of cerium to the total number of moles of terbium and cerium, namely the composition ratio of cerium, preferably falls within the range from 0.01 mol % to 50 mol %. A part of aluminum may be substituted by scandium or further by any one of terbium, cerium, yttrium, lutetium, ytterbium, and thulium.
    Type: Grant
    Filed: April 27, 2013
    Date of Patent: April 11, 2017
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Patent number: 9441153
    Abstract: A UV photoexcited red light-emitting material comprising a fluoride single crystal represented by the chemical formula: M1?xRExF2+x?w, wherein M is at least one metal element belonging to Group 2 of the Periodic Table selected from the group consisting of Be, Mg, Ca, Sr, and Ba, RE is a rare earth element, and the relationships: 0<x?0.4 and 0?w?0.5 are satisfied.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: September 13, 2016
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Publication number: 20160240748
    Abstract: As one of purposes, the present invention provides: a single-crystal phosphor which can exhibit excellent properties under high-temperature conditions; and a light-emitting device in which the phosphor is used. As one embodiment, a single-crystal phosphor is provided, which has a chemical composition represented by the compositional formula: (Y1-x-y-zLuxGdyCez)3+aAl5-aO12(0?x?0.9994, 0?y?0.0669, 0.0002?z?0.0067, ?0.016?a?0.315).
    Type: Application
    Filed: October 20, 2014
    Publication date: August 18, 2016
    Applicants: KOHA CO., LTD., NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Daisuke Inomata, Kazuo Aoki, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Publication number: 20160190418
    Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.
    Type: Application
    Filed: August 8, 2014
    Publication date: June 30, 2016
    Applicants: KOHA CO., LTD., TAMURA CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Daisuke INOMATA, Hiroaki SANO, Seitaro YOSHIDA, Kazuo AOKI, Kiyoshi SHIMAMURA, Encarnacion Antonia GARCIA VILLORA
  • Publication number: 20160043289
    Abstract: Provided are a YAG-based single crystal phosphor which produces fluorescence in an unconventional color and a phosphor-containing member and a light emitting device including the single crystal phosphor. Provided is a single crystal phosphor which includes a composition represented by composition formula (Y1?a?bLuaCeb)3+cAl5?cO12 (wherein 0?a?0.9994, 0.0002?b?0.0067 and ?0.016?c?0.315), and in which CIE chromaticity coordinates x and y of an emission spectrum satisfy a relationship of ?0.4377x+0.7384?y??0.4585x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25° C.
    Type: Application
    Filed: October 22, 2014
    Publication date: February 11, 2016
    Applicant: National Institute for Materials Science
    Inventors: Daisuke INOMATA, Yusuke ARAI, Hiroaki SANO, Kazuo AOKI, Kiyoshi SHIMAMURA, Encarnacion Antonia GARCIA VILLORA
  • Patent number: 9217910
    Abstract: The inorganic optical filter of the invention consists of a NdF3 single crystal. The optical element of the invention comprises a wavelength conversion element wherein incident light is subjected to wavelength conversion to twice the frequency by quasi-phase-matching using primary matching or tertiary matching, and emitted, and an inorganic optical filter situated in the optical path of light emitted from the wavelength conversion element, wherein the wavelength conversion element consists of a ferroelectric fluoride single crystal represented by Ba1?y(Mg1?xZnx)1+yF4 (where 0?x?1, and ?0.2?y?0.2), and the inorganic optical filter consists of a NdF3 single crystal.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: December 22, 2015
    Assignee: National Institute for Materials Science
    Inventors: Keiji Sumiya, Kiyoshi Shimamura, Garcia Villora
  • Patent number: 9190483
    Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm?2 or less and a thickness of 300 ?m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and ?40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of ?40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: November 17, 2015
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yoshihiro Irokawa, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Patent number: 9159800
    Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm?2 or less and a thickness of 300 ?m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and ?40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of ?40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: October 13, 2015
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yoshihiro Irokawa, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Patent number: 9117974
    Abstract: A light emitting element that includes a Ga2O3 substrate; an AlxGa1-xN buffer layer (0?×?1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: August 25, 2015
    Assignee: KOHA CO., LTD.
    Inventors: Noboru Ichinose, Kiyoshi Shimamura, Yukio Kaneko, Encarnacion Antonia Garcia Villora, Kazuo Aoki
  • Patent number: 9112123
    Abstract: [Problem] To provide a light-emitting device which does not undergo the deterioration in luminous efficiency associated with the long-term use. [Solution] A light-emitting device (1) comprises a light-emitting element (10) which can emit blue light and a phosphor (2) which is composed of a single kind of single crystal and can emit yellow light upon the irradiation with the light emitted from the light-emitting element (10) which serves as excitation light. Thus, it becomes possible to prevent the deterioration in luminous efficiency associated with the deterioration in a binder or the like compared with a light-emitting device which utilizes multiple kinds of granular phosphors, because any binder for binding phosphors to each other is not required in the light-emitting device (1).
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: August 18, 2015
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Kazuo Aoki, Makoto Watanabe, Kiyoshi Shimamura, Villora Encarnacion Antonia Garcia
  • Patent number: 9051662
    Abstract: The present invention provides a single crystal for an optical isolator having a Faraday rotation angle exceeding that of TGG single crystal in a wavelength region of 1064 nm or longer or in a wavelength region of shorter than 1064 nm, and is capable of realizing enlargement of crystal size, a production process thereof, an optical isolator, and an optical processor that uses the optical isolator. The single crystal according to the present invention is composed of a terbium aluminum garnet single crystal, and mainly a portion of the aluminum is replaced with lutetium.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: June 9, 2015
    Assignees: FUJIKURA LTD., NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Kazuo Sanada, Kiyoshi Shimamura, Villora Encarnacion Antonia Garcia
  • Patent number: 9030739
    Abstract: The present invention provides a garnet single crystal comprising a terbium aluminum garnet single crystal, wherein a portion of the aluminum is substituted with scandium, and a portion of at least one of the aluminum and terbium is substituted with at least one type selected from the group consisting of thulium, ytterbium and yttrium.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: May 12, 2015
    Assignees: Fujikura Ltd., National Institute for Materials Science
    Inventors: Tsubasa Hatanaka, Akiharu Funaki, Kiyoshi Shimamura, Villora Encarnacion Antonia Garcia
  • Publication number: 20150083967
    Abstract: A phosphor (and a method for manufacturing the same, and a light-emitting device that uses this phosphor) includes single crystals including YAG crystals as a mother crystal, the quantum efficiency of the phosphor at 25° C. being 92% or higher at an excitation light wavelength of 460 nm.
    Type: Application
    Filed: April 18, 2013
    Publication date: March 26, 2015
    Inventors: Makoto Watanabe, Daisuke Inomata, Kazuo Aoki, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora
  • Publication number: 20150034961
    Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm?2 or less and a thickness of 300 ?m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and ?40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of ?40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.
    Type: Application
    Filed: January 30, 2013
    Publication date: February 5, 2015
    Inventors: Yoshihiro Irokawa, Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora