Patents by Inventor Klaus J. Bachmann

Klaus J. Bachmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10512866
    Abstract: A filter housing can support filter media for a fan arrangement. The filter housing can include a filter body with a first opening at a first end and a second opening at a second end. A bell portion can be disposed between the air inlet opening and the air outlet opening and can define a cavity within the housing body. An air-permeable filter support can extend into the cavity to support the filter media within the cavity, with the filter media spaced apart from at least one of the first and second openings.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: December 24, 2019
    Assignee: Hoffman Enclosures, Inc.
    Inventors: Seng Chang, Douglas L. Neuenfeldt, Jeffrey Thibedeau, William J. Nepsha, Richard L. Raisanen, Michael J. Koehler, Paul H. Landgraf, Klaus-Peter Bachmann, Adam Pawlowski
  • Patent number: 6442319
    Abstract: An optical quantitative detection device comprising: a nonlinear waveguide sensor having a top cladding layer with a top surface for interacting with a target molecule; a second waveguide; a second cladding layer optically coupling the nonlinear waveguide sensor to the second waveguide. Wherein optical excitation of the sensor and optical excitation of the second waveguide enables quantitative discrimination of a target molecule.
    Type: Grant
    Filed: February 9, 2000
    Date of Patent: August 27, 2002
    Assignee: Xoetronics LLC
    Inventors: Nikolaus Dietz, Klaus J. Bachmann
  • Patent number: 5552327
    Abstract: Deposition or etching of a layer on a substrate is monitored by impinging P-polarized light on the layer during deposition at an angle which is approximately the Brewster's angle for the substrate, and detecting radiation which is reflected from the structure during deposition. In heterodeposition, a quarter wavelength interference signal having a predetermined periodicity is monitored. Maxima and/or minima in the quarter wavelength ratio are monitored and an amplitude modulated fine signal which is superimposed on the quarter wavelength interference signal is also monitored. The deposition process is controlled based on the monitored quarter wavelength interference signal, ratio of the maxima and/or minima, fine signal, fine signal amplitude modulation and/or combinations thereof by comparing the signals to a reference derived from mathematical models or empirical data. A heterodeposition or etching can also be used to calibrate a homodeposition or etching.
    Type: Grant
    Filed: August 26, 1994
    Date of Patent: September 3, 1996
    Assignee: North Carolina State University
    Inventors: Klaus J. Bachmann, Nikolaus Dietz, Amy E. Miller
  • Patent number: 4388382
    Abstract: Photovoltaic devices are fabricated by forming a thin passivating layer, for example, an oxide layer on a semiconductor material. The passivating layer on the semiconductor material is then contacted with an electrolyte such as an electrolyte containing vanadium ions. The resulting electrolyte/passivating layer/semiconductor (EPLS) structure exhibits excellent solar conversion efficiencies and good stability.
    Type: Grant
    Filed: February 13, 1981
    Date of Patent: June 14, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Klaus J. Bachmann, Hans-Joachim Lewerenz, Maria T. A. S. Menezes
  • Patent number: 4291323
    Abstract: Devices based on InAs.sub.1-x P.sub.x where 0.85.ltoreq.x<1 show advantageous properties. An exemplary device is a rectifying diode formed from indium tin oxide deposited on the subject InAs.sub.1-x P.sub.x.
    Type: Grant
    Filed: May 1, 1980
    Date of Patent: September 22, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Klaus J. Bachmann
  • Patent number: 4287527
    Abstract: Opto-electronic devices such as photodetectors have been made based on bulk crystals of Ga.sub.x In.sub.1-x P.sub.y As.sub.1-y. These bulk crystals have high purity, e.g., less than 10.sup.16 carriers/cm.sup.3 and low defect densities, e.g., less than 10.sup.6 cm.sup.-2. The properties of these crystals lead to photodetectors with good quantum efficiencies.
    Type: Grant
    Filed: September 7, 1979
    Date of Patent: September 1, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Klaus J. Bachmann, Charles T. Ryan