Patents by Inventor Koei Yamamoto
Koei Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105463Abstract: There is provided a technique that includes: (a) loading a substrate into a process container at a loading temperature; (b) setting an interior of the process container to a film formation temperature; (c) forming a metal film on a surface of the substrate by supplying a process gas into the process container; (d) setting the interior of the process container to an unloading temperature lower than the loading temperature; and (e) unloading the substrate from the process container.Type: ApplicationFiled: September 20, 2023Publication date: March 28, 2024Applicant: Kokusai Electric CorporationInventors: Koei KURIBAYASHI, Kaoru Yamamoto
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Patent number: 11860032Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.Type: GrantFiled: July 26, 2021Date of Patent: January 2, 2024Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takuya Fujita, Yusei Tamura, Kenji Makino, Takashi Baba, Koei Yamamoto
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Publication number: 20230045038Abstract: A method for manufacturing a back-illuminated solid-state imaging device includes a first step of preparing a first conduction-type semiconductor layer having a front surface and a back surface, a second step of forming a first asperity region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer, a third step of forming a second asperity region on the front surface of the semiconductor layer by smoothening asperities of the first asperity region, and a fourth step of forming an insulating layer along the second asperity region and forming a plurality of charge transfer electrodes on the insulating layer.Type: ApplicationFiled: January 19, 2021Publication date: February 9, 2023Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Koei YAMAMOTO, Tatsuki KASUYA, Kazuhiro TANIZAKI, Yoshiyuki SUZUKI
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Patent number: 11322635Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.Type: GrantFiled: November 9, 2017Date of Patent: May 3, 2022Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takashi Baba, Shunsuke Adachi, Shigeyuki Nakamura, Terumasa Nagano, Koei Yamamoto
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Patent number: 11289614Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.Type: GrantFiled: December 12, 2016Date of Patent: March 29, 2022Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Koei Yamamoto, Shigeyuki Nakamura, Terumasa Nagano, Kenichi Sato
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Patent number: 11183608Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.Type: GrantFiled: November 9, 2017Date of Patent: November 23, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Shigeyuki Nakamura, Shunsuke Adachi, Takashi Baba, Terumasa Nagano, Koei Yamamoto
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Publication number: 20210356319Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.Type: ApplicationFiled: July 26, 2021Publication date: November 18, 2021Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takuya FUJITA, Yusei TAMURA, Kenji MAKINO, Takashi BABA, Koei YAMAMOTO
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Patent number: 11125616Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.Type: GrantFiled: January 24, 2019Date of Patent: September 21, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takuya Fujita, Yusei Tamura, Kenji Makino, Takashi Baba, Koei Yamamoto
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Publication number: 20200370954Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.Type: ApplicationFiled: January 24, 2019Publication date: November 26, 2020Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takuya FUJITA, Yusei TAMURA, Kenji MAKINO, Takashi BABA, Koei YAMAMOTO
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Patent number: 10816681Abstract: A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.Type: GrantFiled: October 28, 2016Date of Patent: October 27, 2020Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Keiji Abe, Toshiyuki Izawa, Koei Yamamoto
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Publication number: 20200257006Abstract: A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.Type: ApplicationFiled: October 28, 2016Publication date: August 13, 2020Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Keiji ABE, Toshiyuki IZAWA, Koei YAMAMOTO
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Publication number: 20200058821Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.Type: ApplicationFiled: November 9, 2017Publication date: February 20, 2020Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takashi BABA, Shunsuke ADACHI, Shigeyuki NAKAMURA, Terumasa NAGANO, Koei YAMAMOTO
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Publication number: 20190334050Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.Type: ApplicationFiled: November 9, 2017Publication date: October 31, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Shigeyuki NAKAMURA, Shunsuke ADACHI, Takashi BABA, Terumasa NAGANO, Koei YAMAMOTO
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Patent number: 10249784Abstract: An optical sensor includes: a light emitting element 40; a lower substrate 20 on which the light emitting element 40 is provided; an upper substrate 10 provided so that the light emitting element 40 is positioned between the upper substrate 10 and the lower substrate 20; and an optical block 30 provided on the upper substrate 10. The upper substrate 10 includes a division-type photodiode SD. The optical block 30 is configured to reflect light emitted from the light emitting element 40 toward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.Type: GrantFiled: April 23, 2015Date of Patent: April 2, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Koei Yamamoto, Hiroshi Okamoto, Masaomi Takasaka, Yuki Okuwa, Shinya Iwashina
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Patent number: 10224361Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.Type: GrantFiled: June 10, 2016Date of Patent: March 5, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Koei Yamamoto, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
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Publication number: 20190051767Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.Type: ApplicationFiled: December 12, 2016Publication date: February 14, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Koei YAMAMOTO, Shigeyuki NAKAMURA, Terumasa NAGANO, Kenichi SATO
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Patent number: 10205296Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.Type: GrantFiled: June 7, 2017Date of Patent: February 12, 2019Assignees: NIPPON TELEGRAPH AND TELEPHONE CORPORATION, HAMAMATSU PHOTONICS K.K., NTT Advanced Technology CorporationInventors: Seiji Toyoda, Yuzo Sasaki, Takashi Sakamoto, Joji Yamaguchi, Tadashi Sakamoto, Koei Yamamoto, Masatoshi Fujimoto, Mahiro Yamada, Shogo Yagi, Yukihiko Ushiyama, Eiichi Sugai, Koji Yoneyama, Kazuo Fujiura
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Patent number: 10192923Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.Type: GrantFiled: June 10, 2016Date of Patent: January 29, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Koei Yamamoto, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
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Publication number: 20170358899Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.Type: ApplicationFiled: June 7, 2017Publication date: December 14, 2017Applicants: Nippon Telegraph and Telephone Corporation, Hamamatsu Photonics K.K., NTT Advanced Technology CorporationInventors: Seiji TOYODA, Yuzo Sasaki, Takashi Sakamoto, Joji Yamaguchi, Tadashi Sakamoto, Koei Yamamoto, Masatoshi Fujimoto, Mahiro Yamada, Shogo Yagi, Yukihiko Ushiyama, Eiichi Sugai, Koji Yoneyama, Kazuo Fujiura
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Patent number: 9823359Abstract: A radiation image detecting device includes a photodetecting element that detects fluorescence light, and a prism that is disposed on an optical path of excitation light traveling toward an imaging plate and between the photodetecting element and the imaging plate. The prism includes, as surface thereof, a side face that is opposed to the imaging plate, and a side face and a side face that are inclined relative to the side face. The prism is disposed so that the excitation light incident through the side face propagates inside and is output from the side face and so that reflection from the imaging plate incident through the side face propagates inside and is output from the side face. The photodetecting element is disposed so as to be opposed to a region different from a region where the reflection from the imaging plate is output, in the surface of the prism.Type: GrantFiled: January 24, 2014Date of Patent: November 21, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Koei Yamamoto, Toshihiro Oikawa, Hiroki Suzuki, Yuichi Miyamoto, Naoto Sakurai