Patents by Inventor Koei Yamamoto

Koei Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240105463
    Abstract: There is provided a technique that includes: (a) loading a substrate into a process container at a loading temperature; (b) setting an interior of the process container to a film formation temperature; (c) forming a metal film on a surface of the substrate by supplying a process gas into the process container; (d) setting the interior of the process container to an unloading temperature lower than the loading temperature; and (e) unloading the substrate from the process container.
    Type: Application
    Filed: September 20, 2023
    Publication date: March 28, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Koei KURIBAYASHI, Kaoru Yamamoto
  • Patent number: 11860032
    Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: January 2, 2024
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takuya Fujita, Yusei Tamura, Kenji Makino, Takashi Baba, Koei Yamamoto
  • Publication number: 20230045038
    Abstract: A method for manufacturing a back-illuminated solid-state imaging device includes a first step of preparing a first conduction-type semiconductor layer having a front surface and a back surface, a second step of forming a first asperity region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer, a third step of forming a second asperity region on the front surface of the semiconductor layer by smoothening asperities of the first asperity region, and a fourth step of forming an insulating layer along the second asperity region and forming a plurality of charge transfer electrodes on the insulating layer.
    Type: Application
    Filed: January 19, 2021
    Publication date: February 9, 2023
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei YAMAMOTO, Tatsuki KASUYA, Kazuhiro TANIZAKI, Yoshiyuki SUZUKI
  • Patent number: 11322635
    Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: May 3, 2022
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takashi Baba, Shunsuke Adachi, Shigeyuki Nakamura, Terumasa Nagano, Koei Yamamoto
  • Patent number: 11289614
    Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: March 29, 2022
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Shigeyuki Nakamura, Terumasa Nagano, Kenichi Sato
  • Patent number: 11183608
    Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: November 23, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shigeyuki Nakamura, Shunsuke Adachi, Takashi Baba, Terumasa Nagano, Koei Yamamoto
  • Publication number: 20210356319
    Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.
    Type: Application
    Filed: July 26, 2021
    Publication date: November 18, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takuya FUJITA, Yusei TAMURA, Kenji MAKINO, Takashi BABA, Koei YAMAMOTO
  • Patent number: 11125616
    Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: September 21, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takuya Fujita, Yusei Tamura, Kenji Makino, Takashi Baba, Koei Yamamoto
  • Publication number: 20200370954
    Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.
    Type: Application
    Filed: January 24, 2019
    Publication date: November 26, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takuya FUJITA, Yusei TAMURA, Kenji MAKINO, Takashi BABA, Koei YAMAMOTO
  • Patent number: 10816681
    Abstract: A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 27, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Keiji Abe, Toshiyuki Izawa, Koei Yamamoto
  • Publication number: 20200257006
    Abstract: A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.
    Type: Application
    Filed: October 28, 2016
    Publication date: August 13, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Keiji ABE, Toshiyuki IZAWA, Koei YAMAMOTO
  • Publication number: 20200058821
    Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.
    Type: Application
    Filed: November 9, 2017
    Publication date: February 20, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takashi BABA, Shunsuke ADACHI, Shigeyuki NAKAMURA, Terumasa NAGANO, Koei YAMAMOTO
  • Publication number: 20190334050
    Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.
    Type: Application
    Filed: November 9, 2017
    Publication date: October 31, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Shigeyuki NAKAMURA, Shunsuke ADACHI, Takashi BABA, Terumasa NAGANO, Koei YAMAMOTO
  • Patent number: 10249784
    Abstract: An optical sensor includes: a light emitting element 40; a lower substrate 20 on which the light emitting element 40 is provided; an upper substrate 10 provided so that the light emitting element 40 is positioned between the upper substrate 10 and the lower substrate 20; and an optical block 30 provided on the upper substrate 10. The upper substrate 10 includes a division-type photodiode SD. The optical block 30 is configured to reflect light emitted from the light emitting element 40 toward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: April 2, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Hiroshi Okamoto, Masaomi Takasaka, Yuki Okuwa, Shinya Iwashina
  • Patent number: 10224361
    Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: March 5, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
  • Publication number: 20190051767
    Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.
    Type: Application
    Filed: December 12, 2016
    Publication date: February 14, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei YAMAMOTO, Shigeyuki NAKAMURA, Terumasa NAGANO, Kenichi SATO
  • Patent number: 10205296
    Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: February 12, 2019
    Assignees: NIPPON TELEGRAPH AND TELEPHONE CORPORATION, HAMAMATSU PHOTONICS K.K., NTT Advanced Technology Corporation
    Inventors: Seiji Toyoda, Yuzo Sasaki, Takashi Sakamoto, Joji Yamaguchi, Tadashi Sakamoto, Koei Yamamoto, Masatoshi Fujimoto, Mahiro Yamada, Shogo Yagi, Yukihiko Ushiyama, Eiichi Sugai, Koji Yoneyama, Kazuo Fujiura
  • Patent number: 10192923
    Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 29, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
  • Publication number: 20170358899
    Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.
    Type: Application
    Filed: June 7, 2017
    Publication date: December 14, 2017
    Applicants: Nippon Telegraph and Telephone Corporation, Hamamatsu Photonics K.K., NTT Advanced Technology Corporation
    Inventors: Seiji TOYODA, Yuzo Sasaki, Takashi Sakamoto, Joji Yamaguchi, Tadashi Sakamoto, Koei Yamamoto, Masatoshi Fujimoto, Mahiro Yamada, Shogo Yagi, Yukihiko Ushiyama, Eiichi Sugai, Koji Yoneyama, Kazuo Fujiura
  • Patent number: 9823359
    Abstract: A radiation image detecting device includes a photodetecting element that detects fluorescence light, and a prism that is disposed on an optical path of excitation light traveling toward an imaging plate and between the photodetecting element and the imaging plate. The prism includes, as surface thereof, a side face that is opposed to the imaging plate, and a side face and a side face that are inclined relative to the side face. The prism is disposed so that the excitation light incident through the side face propagates inside and is output from the side face and so that reflection from the imaging plate incident through the side face propagates inside and is output from the side face. The photodetecting element is disposed so as to be opposed to a region different from a region where the reflection from the imaging plate is output, in the surface of the prism.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: November 21, 2017
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Toshihiro Oikawa, Hiroki Suzuki, Yuichi Miyamoto, Naoto Sakurai