Abstract: Provided is an electrophotographic apparatus including: an electrophotographic photosensitive member; a voltage application unit configured to cause discharge from an electroconductive member to the electrophotographic photosensitive member; a charge transfer amount detection unit configured to detect a charge transfer amount per unit time resulting from the discharge from the electroconductive member to the electrophotographic photosensitive member; and a charging potential control unit, wherein V1 and V2 defined by specific procedures for the electrophotographic photosensitive member satisfy a relationship represented by the following expression (E-4): 100V1<V2?V1 (E-4), and wherein the charging potential control unit is configured to control the charging potential of the electrophotographic photosensitive member at the time of image formation.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: A substrate processing apparatus includes an inner tube configured to accommodate a plurality of substrates and having a first opening portion; an outer tube surrounding the inner tube; a movable wall movably provided in the inner tube or between the inner tube and the outer tube and having a second opening portion; a gas supply part configured to supply a processing gas into the inner tube; an exhaust part provided outside the movable wall and configured to exhaust the processing gas supplied into the inner tube through the first opening portion and the second opening portion; and a pressure detection part configured to detect a pressure inside the inner tube.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: A substrate processing apparatus includes an inner tube installed to accommodate a plurality of substrates and having a first opening, an outer tube configured to surround the inner tube, a movable wall installed inside the inner tube or between the inner tube and the outer tube, configured to be movable, and having a second opening, a gas supply part configured to supply a process gas to the substrates and an exhaust part installed outside the movable wall and configured to exhaust the process gas supplied to the substrates.

Abstract: A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: A substrate processing apparatus includes an inner tube configured to accommodate a plurality of substrates and having a first opening portion; an outer tube surrounding the inner tube; a movable wall movably provided in the inner tube or between the inner tube and the outer tube and having a second opening portion; a gas supply part configured to supply a processing gas into the inner tube; an exhaust part provided outside the movable wall and configured to exhaust the processing gas supplied into the inner tube through the first opening portion and the second opening portion; and a pressure detection part configured to detect a pressure inside the inner tube.

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

Abstract: A gas introduction mechanism includes a manifold disposed in a process vessel and having an injector support part extending vertically along an inner wall surface of the process vessel and having an insertion hole, and a gas introduction part having a gas flow passage which protrudes outward from the injector support part and which communicates with the insertion hole and an outside of the process vessel so that a gas can flow through the insertion hole and the outside of the process vessel, an injector inserted and fitted into the insertion hole to be supported by the insertion hole, and extending linearly entirely within the injector along the inner wall surface and has an opening communicating with the gas flow passage at a position inserted into the insertion hole, and a rotation mechanism connected to a lower end portion of the injector to rotate the injector.

Abstract: A substrate processing apparatus includes an inner tube installed to accommodate a plurality of substrates and having a first opening, an outer tube configured to surround the inner tube, a movable wall installed inside the inner tube or between the inner tube and the outer tube, configured to be movable, and having a second opening, a gas supply part configured to supply a process gas to the substrates and an exhaust part installed outside the movable wall and configured to exhaust the process gas supplied to the substrates.

Abstract: In an apparatus for detecting tip-over of a rammer equipped with a crankcase accommodating an output shaft rotatably connected to an engine, a movable unit accommodating a converter mechanism for converting rotation of the output shaft to vertical motion of a movable member, a tamping shoe connected to the movable unit, and a handle operable by an user, and adapted to thrust upward in the gravitational direction by the vertical motion of the movable member and go into a free fall to compact a ground surface, it is determined whether a detected engine speed becomes equal to or smaller than a threshold value set lower than an engine idling speed when the engine has been operated at a rammer working speed set greater than the engine idling speed, and if it does, it is discriminated that the rammer has tipped over.

Abstract: A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container.

Abstract: A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.