Patents by Inventor Kohei Sasaki

Kohei Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210020789
    Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.
    Type: Application
    Filed: February 25, 2019
    Publication date: January 21, 2021
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc., TDK Corporation
    Inventors: Kohei SASAKI, Minoru FUJITA, Jun HIRABAYASHI, Jun ARIMA
  • Patent number: 10861945
    Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: December 8, 2020
    Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Publication number: 20200348219
    Abstract: A detection device comprises a cyclone-type collection part for collecting particles contained in a gas into a collection liquid with a swirling airflow, a detection part for detecting the particles collected by the cyclone-type collection part; and a cleaning part for cleaning the cyclone-type collection part with a cleaning liquid. The cleaning part cleans the cyclone-type collection part by swirling the cleaning liquid with the swirling airflow generated in the cyclone-type collection part.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Inventors: AKIKO MURATA, KOHEI HARA, YOSHIKI SASAKI
  • Patent number: 10825935
    Abstract: A trench MOS-type Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer opposite to the first semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer opposite to the second semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench MOS gate that is embedded in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: November 3, 2020
    Assignees: TAMURA CORPORATION, National Institute of Information and Communications Technology
    Inventors: Kohei Sasaki, Masataka Higashiwaki
  • Publication number: 20200332194
    Abstract: The purpose of the present invention is to provide: elements, in particular, a display element and an optical element, which are obtained by controlling orientation of liquid crystals in a liquid crystal bulk without using a liquid crystal orientation film; and/or a photoreactive liquid crystal composition for manufacturing the elements. The present invention provides: a photoreactive liquid crystal composition comprising (A) a photoreactive polymer liquid crystal which includes a photoreactive side chain in which at least one type of reaction selected from the group consisting of (A-1) photocrosslinking and (A-2) photoisomerization occurs, and (B) a low molecular weight liquid crystal; and an optical element or display element which is formed having a liquid crystal cell including the composition.
    Type: Application
    Filed: July 7, 2020
    Publication date: October 22, 2020
    Applicants: UNIVERSITY OF HYOGO, NAGAOKA UNIVERSITY OF TECHNOLOGY, NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tomoyuki SASAKI, Hiroshi ONO, Nobuhiro KAWATSUKI, Kohei GOTO
  • Publication number: 20200323079
    Abstract: A printed wiring board includes a main substrate and a rising substrate. A support portion of the rising substrate is inserted into a slit in the main substrate. In a direction in which a plurality of first electrodes are aligned, a width of each of the plurality of first electrodes is larger than a width of each of a plurality of second electrodes, and the width of each of the plurality of second electrodes is arranged to fit within the width of each of the plurality of first electrodes.
    Type: Application
    Filed: June 23, 2020
    Publication date: October 8, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Shunsuke SASAKI, Kohei SATO, Yusuke MORIMOTO
  • Publication number: 20200310298
    Abstract: A cartridge includes a housing that has an opening and a conveyance member disposed near a bottom surface of the housing. The conveyance member is configured to convey developer along a first direction from a deep side to an opening side of the housing, or a second direction from the opening side to the deep side. The cartridge also includes a driving member connected to one end of the conveyance member, with the driving member being configured to reciprocate the conveyance member along a surface direction of the conveyance member in a manner such that a maximum acceleration of the conveyance member in the first direction and a maximum acceleration in the second direction are different from each other. The housing includes a regulation member that regulates movement of the conveyance member in a direction in which the conveyance member moves away from the bottom surface of the housing.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 1, 2020
    Inventors: Kentaro Kawata, Yasushi Katsuta, Kohei Matsuda, Shun Sato, Hiraku Sasaki, Hiroki Ogino
  • Publication number: 20200310334
    Abstract: Provided are a cleaning member that scrapes developer from a photosensitive drum attached to an opening of a cleaning frame, and a transport member that transports scraped developer from an opening side of the frame towards an opposing deep side. The transport member is driven such that an absolute value of maximum acceleration at the time of movement of the transport sheet in a direction from the opening side towards the deep side is smaller than an absolute value of maximum acceleration at the time of movement in a reverse direction of the former direction. In the longitudinal direction of the photosensitive drum, the width of the transport member is smaller than an abutting width of an abutting portion of the cleaning member with the photosensitive drum, and ends of the transport member in the longitudinal direction are positioned inward of ends of the abutting portion.
    Type: Application
    Filed: March 23, 2020
    Publication date: October 1, 2020
    Inventors: Kohei Matsuda, Hiraku Sasaki, Hiroki Ogino, Kentaro Kawata, Shun Sato, Yasushi Katsuta
  • Publication number: 20200310294
    Abstract: A developing device includes a rotatable developer carrying member, a frame, a partition wall partitioning an inside of the frame into a developing chamber and a developer accommodating portion and provided with an opening, and a feeding member. The feeding member includes a flexible sheet member and a driving member. Maximum acceleration of the sheet member driven by the driving member in a first direction in which the developer in the developer accommodating chamber is moved toward the opening is smaller than maximum acceleration in a second direction opposite to the first direction. When the sheet member is reciprocated in a surface direction by the driving member, the sheet member is deformable so as to follow a shape of an inner wall surface of the developer accommodating chamber.
    Type: Application
    Filed: March 16, 2020
    Publication date: October 1, 2020
    Inventors: Shun Sato, Yasushi Katsuta, Kohei Matsuda, Kentaro Kawata, Hiraku Sasaki, Hiroki Ogino
  • Publication number: 20200310332
    Abstract: Provided are a cleaning member that removes a developer from the surface of an image bearing member that is attached to an opening of a frame; a transport member that transports developer removed from the surface of the photosensitive member drum by the cleaning member, from an opening side of the frame towards an opposing deep side; and a driving unit for driving the transport member such that the transport member moves relatively to the cleaning member. The transport member is driven by the driving unit such that an absolute value of maximum acceleration at the time of movement of the transport member in a direction from the opening side of the frame towards the deep side is smaller than an absolute value of maximum acceleration at the time of movement in a direction from the deep side towards the opening side.
    Type: Application
    Filed: March 23, 2020
    Publication date: October 1, 2020
    Inventors: Hiroki Ogino, Kohei Matsuda, Hiraku Sasaki, Kentaro Kawata, Yasushi Katsuta, Shun Sato
  • Patent number: 10752839
    Abstract: A photoreactive liquid crystal composition containing (A) a photoreactive polymer liquid crystal which includes a photoreactive side chain in which at least one type of reaction selected from (A-1) photocrosslinking and (A-2) photoisomerization occurs, and (B) a low molecular weight liquid crystal. An optical element or display element is formed having a liquid crystal cell including the photoreactive liquid crystal composition.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: August 25, 2020
    Assignees: UNIVERSITY OF HYOGO, NAGAOKA UNIVERISTY OF TECHNOLOGY, NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tomoyuki Sasaki, Hiroshi Ono, Nobuhiro Kawatsuki, Kohei Goto
  • Patent number: 10757807
    Abstract: A printed wiring board includes a main substrate and a rising substrate. A support portion of the rising substrate is inserted into a slit in the main substrate. In a direction in which a plurality of first electrodes are aligned, a width of each of the plurality of first electrodes is larger than a width of each of a plurality of second electrodes, and the width of each of the plurality of second electrodes is arranged to fit within the width of each of the plurality of first electrodes.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: August 25, 2020
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shunsuke Sasaki, Kohei Sato, Yusuke Morimoto
  • Patent number: 10742933
    Abstract: In an in-vehicle picture storage device for a motorcycle having a camera mounted in a vehicle, and a storage device for storing pictures taken by the camera, the camera contains a first camera for imaging rider's facial expression, and the storage device stores vehicle environmental information in association with pictures taken by the first camera. The stored rider's pictures can be viewed in association with the vehicle environmental information, and a user can experience the conditions of a rider, a vehicle, etc. more realistically.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: August 11, 2020
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Kohei Noguchi, Takashi Sasaki
  • Publication number: 20200235234
    Abstract: A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.
    Type: Application
    Filed: September 26, 2018
    Publication date: July 23, 2020
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.
    Inventor: Kohei SASAKI
  • Publication number: 20200168711
    Abstract: A diode includes an n-type semiconductor layer including an n-type Ga2O3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.
    Type: Application
    Filed: July 23, 2018
    Publication date: May 28, 2020
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.
    Inventor: Kohei SASAKI
  • Publication number: 20200168460
    Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.
    Type: Application
    Filed: July 9, 2018
    Publication date: May 28, 2020
    Applicants: TAMURA CORPORATION, SICOXS Corporation, National Institute of Information and Communications Technology
    Inventors: Akito KURAMATA, Shinya WATANABE, Kohei SASAKI, Kuniaki YAGI, Naoki HATTA, Masataka HIGASHIWAKI, Keita KONISHI
  • Publication number: 20200144377
    Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.
    Type: Application
    Filed: April 26, 2018
    Publication date: May 7, 2020
    Applicants: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.
    Inventors: Masataka HIGASHIWAKI, Yoshiaki NAKATA, Takafumi KAMIMURA, Man Hoi WONG, Kohei SASAKI, Daiki WAKIMOTO
  • Patent number: 10633761
    Abstract: Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: April 28, 2020
    Assignee: TAMURA CORPORATION
    Inventor: Kohei Sasaki
  • Patent number: 10578885
    Abstract: A polarization coupling device includes a polarization combining element. The polarization combining element includes a polarization rotating unit that rotates a polarization direction of a first polarized wave incident on the polarization combining element, and a polarization combining unit that combines the first polarized wave with the polarization direction rotated by the polarization rotating unit and a second polarized wave incident on the polarization combining element with each other, and the polarization rotating unit and the polarization combining unit are integrated with each other. Due to this configuration, the polarization coupling device has an effect where downscaling of the device can be advanced.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: March 3, 2020
    Assignee: FUJITSU OPTICAL COMPONENTS LIMITED
    Inventors: Seimi Sasaki, Hiroshi Kato, Kohei Shibata, Takehito Tanaka
  • Publication number: 20200066921
    Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.
    Type: Application
    Filed: February 27, 2018
    Publication date: February 27, 2020
    Applicants: TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.
    Inventors: Kohei SASAKI, Masataka HIGASHIWAKI