Abstract: A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member

Abstract: Although a conventional method of inspecting an ink discharge state in which the temperature change of the heater is detected enables accurate and high-speed inspection, due to the situation in which the inspection was performed, appropriate post-processing depending on the situation cannot be executed based on a result of the inspection. Therefore, it is necessary to determine the ink discharge state in detail. According to an embodiment of the present invention, a plurality of modes are provided in accordance with the purpose of performing an inspection of the ink discharge state, and a discharge inspection threshold is provided for each of these modes. By selectively executing or continuously executing these modes, it is possible to determine the ink discharge state in more detail.

Abstract: A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.

Abstract: An object of the present disclosure is to acquire an accurate temperature of a print head. The present disclosure is an ink jet printing apparatus comprising a print head, a transmission unit configured to transmit a control signal, and a detection unit configured to detect a temperature by reading an output of a Di sensor after the transmission, and as drive conditions for driving a printing element, there is a plurality of drive conditions whose driving cycle of the printing element is different from one another, within a predetermined period in length in accordance with the driving cycle, transmission of a control signal and temperature detection are performed, a part of a line used for transmission of the control signal and a part of a line connected with the Di sensor are in common.

Abstract: A printed wiring board includes a main substrate and a rising substrate. A support portion of the rising substrate is inserted into a slit in the main substrate. In a direction in which a plurality of first electrodes are aligned, a width of each of the plurality of first electrodes is larger than a width of each of a plurality of second electrodes, and the width of each of the plurality of second electrodes is arranged to fit within the width of each of the plurality of first electrodes.

Abstract: A printing apparatus, that uses a printhead including a circuit configured to inspect an ink discharge status of a selected nozzle using a temperature detection element, causes the printhead to inspect the ink discharge status by changing a threshold value for judging a detection result of the temperature detection element, in order to judge the ink discharge status in a state in which a heater in the selected nozzle is driven by each of a first pulse and a second pulse whose waveform is different from that of the first pulse, obtains first information about a change point where a judgment result obtained by the first pulse changes, and second information about a change point where a judgment result obtained by the second pulse changes, and sets the threshold value, based on the first and second information.

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.

Abstract: A laminated film includes, at least on one side thereof, a layer containing a hardening resin, having a total thickness of 1 to 100 ?m, a light transmittance of 70% or more at a wavelength of 400 nm, a Young's modulus of 5 GPa or more when applying a nanoindenter to make a 1 ?m depression in the thickness direction into the surface of the hardening layer, and undergoing a rate of deformation of 500 ppm or less after applying a stress of 0.5 MPa for 30 minutes.

Abstract: A car seat includes a first heater, a second heater, and a control unit which controls an output to the first heater and an output to the second heater. The control unit executes a temperature-difference adjustment control, in which the output of the second heater is controlled such that the temperature of the bulging portion heated by the second heater with respect to the temperature of the seating surface portion heated by the first heater is made lower when an ambient temperature is a first temperature than when the ambient temperature is a second temperature which is higher than the first temperature.

Abstract: There is provided a plasma processing apparatus and a plasma processing method for efficiently processing a wafer using plasma. The plasma processing apparatus includes two processing steps and a bridging step between the two processing steps.

Abstract: A car seat includes a first heater, a second heater, and a control unit which controls an output to the first heater and an output to the second heater. The control unit executes a temperature-difference adjustment control, in which the output of the second heater is controlled such that the temperature of the bulging portion heated by the second heater with respect to the temperature of the seating surface portion heated by the first heater is made lower when an ambient temperature is a first temperature than when the ambient temperature is a second temperature which is higher than the first temperature.

Abstract: The present invention has the object of providing a metal showerhead lighter than previous, at a low cost. A showerhead 3 furnished with an outer cylinder 31 in which a metal plate is plastically deformed and formed into a cylindrical shape in which the base end portion thereof is left open; and a water conduit member 32 which is inserted from the open end of the base end portion side into the outer cylinder to supply hot or cold water supplied from a hose into outer cylinder 31; whereby a gripping portion 311 for holding outer cylinder 31 by hand is provided on the base end portion of outer cylinder 31, and a spray portion 33 is provided in which multiple spray holes 33b are formed to spray hot or cold water supplied by water conduit member 32 to the front end portion side of outer cylinder 31.

Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

Abstract: A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member