Patents by Inventor Koichi Kitahara
Koichi Kitahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240100583Abstract: Provided is a burring processing method, which is a method for forming a buffing processed portion including a raised portion and a curved portion in a metal component having a pilot hole formed therein, the method being characterized by including: a preforming step of enlarging a diameter of the pilot hole, moving an edge portion of the pilot hole relative to the metal component in a first direction of a thickness direction of the metal component in a first range around the pilot hole of the metal component, and forming the whole first range into a preformed portion raised from the metal component in the first direction; and a main forming step of deforming the preformed portion in a second direction opposite to the first direction, forming a second range on an outer diameter side of the preformed portion to have the same height as the first range in the first direction, and forming part of a third range on an inner diameter side of the preformed portion from the second range to be part of the curved portionType: ApplicationFiled: January 12, 2022Publication date: March 28, 2024Applicant: NIPPON STEEL CORPORATIONInventors: Kenichiro OTSUKA, Masafumi AZUMA, Koichi HAMADA, Ryo TABATA, Ryo URUSHIBATA, Yuuki KITAHARA
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Patent number: 6740565Abstract: There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 &OHgr;cm or greater, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 &OHgr;cm or greater.Type: GrantFiled: November 26, 2002Date of Patent: May 25, 2004Assignee: Nippon Steel CorporationInventors: Atsuki Matsumura, Tsutomu Sasaki, Koichi Kitahara
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Publication number: 20030170940Abstract: There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 &OHgr;cm or greater, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 &OHgr;cm or greater.Type: ApplicationFiled: November 26, 2002Publication date: September 11, 2003Inventors: Atsuki Matsumura, Tsutomi Sasaki, Koichi Kitahara
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Publication number: 20010021593Abstract: A chemical vapor deposition apparatus for forming a semiconductor film, which includes a lateral reaction tube including a susceptor for placing a substrate thereon; a round-shaped heater for heating the substrate; and a gas inlet for introducing a gas containing at least one source gas, the inlet being provided so as to be substantially parallel to the substrate, wherein the heating density of an upstream portion, with respect to the flow of the gas, of the round-shaped heater is higher than that of the remaining portion of the heater. A chemical vapor deposition process employing the chemical vapor deposition apparatus is also disclosed.Type: ApplicationFiled: February 26, 2001Publication date: September 13, 2001Applicant: Japan Pionics Co., Ltd.Inventors: Shiro Sakai, Koichi Kitahara, Yukichi Takamatsu, Yuji Mori
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Patent number: 5670445Abstract: A cleaning agent for removing acidic gases which are harmful materials from a harmful gas containing such acidic gases, and a cleaning method using the cleaning agent are disclosed. The cleaning agent comprises a molded product of a composition comprising strontium hydroxide and an iron oxide, and the harmful gas is passed through a cleaning column packed with the cleaning agent to contact the harmful gas with the cleaning agent, thereby removing the acidic gases from the harmful gas.Type: GrantFiled: March 23, 1995Date of Patent: September 23, 1997Assignee: Japan Pionics Co., Ltd.Inventors: Koichi Kitahara, Kenji Otsuka, Toshiya Hatakeyama, Hideki Fukuda
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Patent number: 5493148Abstract: A semiconductor device includes a resistor network having a plurality of trimming polysilicon resistors. The polysilicon resistors have the same width and different lengths and can be selectively fused according to the value of current which is caused to flow therein. The resultant resistance of the resistor network is changed by selectively fusing the polysilicon resistors. The output characteristic of the semiconductor device can be adjusted by changing the resultant resistance.Type: GrantFiled: October 2, 1992Date of Patent: February 20, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Yu Ohata, Koichi Kitahara, Yosuke Takagi
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Patent number: 5429762Abstract: A cooling agent which cools by an endothermic reaction resulting from the dissolving of crystals of inorganic salts water, the salts crystallizing at about room temperature by supplying heat. The cooling agent comprises a mixture of (i) a sodium phosphate salt, (ii) a sodium ammonium phosphate salt or an ammonium phosphate salt, and (iii) water. The cooling agent is produced in a manner which avoids the conglomeration of the crystals, which was a difficulty in the art. Moreover, the cooling agent of the present invention can be used repeatedly. When a nucleating agent, a highly water absorbent polymer or a thickener is added to the cooling agent, the precipitation of the crystals occurs in a still finer and stabler state. The cooling agent can be used in a cooling pillow having a desirable cooling property and a soft and agreeable touch, which offers comfort with safety and which is free from conglomeration of crystals, even after a long period of time.Type: GrantFiled: December 30, 1993Date of Patent: July 4, 1995Assignee: Japan Pionics Co., Ltd.Inventors: Koichi Kitahara, Yasuhiko Koiso, Yoshiki Matsumoto, Masayuki Fujisawa, Isao Nagatsu, Mamoru Takahashi
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Patent number: 5418383Abstract: At least one power output element made of an insulated gate semiconductor element, a surge protection element for an input electrode of the power output element, and a circuit element block for controlling the power output element, are formed on the same semiconductor substrate. A predetermined electrode of the power output element and one end of the surge protection element are connected to each other. In this state, first, second, and third electrode wiring layers are connected to an output terminal of the circuit element block, the other end of the surge protection element, and the input electrode of the power output element, respectively, and the first to third electrode wiring layers are formed separately from one another. In order to connect the first to third electrode wiring layers to each other, a fourth electrode wiring layer is formed thereon.Type: GrantFiled: October 29, 1993Date of Patent: May 23, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Yosuke Takagi, Yu Ohata, Koichi Kitahara
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Patent number: 5294422Abstract: Highly purified rare gas (helium, neon, argon, krypton, xenon, etc.) is obtained by removing impurities contained therein, such as nitrogen, hydrocarbon, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, at relatively low temperatures by the use of a getter. This getter is a two-component alloy of zirconium and vanadium, or a multi-component alloy containing, as well as zirconium and vanadium, at least one of chromium, nickel and cobalt.Type: GrantFiled: October 5, 1992Date of Patent: March 15, 1994Assignee: Japan Pionics Co., Ltd.Inventors: Koichi Kitahara, Kenji Ohtsuka, Noboru Takemasa, Shinobu Kamiyama
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Patent number: 5261241Abstract: A refrigerant containing two or more constituent components that exhibit an endothermic action when mixed with each other, the refrigerant including, as the constituent components, an inorganic salt and a salt hydrate containing at least a hydrate of strontium hydroxide. The refrigerant has a superior cooling capability such as a low attainable cooling temperature and a long duration of the cooled state, and also has no fear of melting or deterioration even where the atmospheric temperature is increased during storage.Type: GrantFiled: January 29, 1992Date of Patent: November 16, 1993Assignee: Japan Pionics Co., Ltd.Inventors: Koichi Kitahara, Yoshiki Matsumoto, Masayuki Fujisawa, Isao Nagatsu, Miyoko Hiramoto, Shigeo Ariki
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Patent number: 5194233Abstract: Highly purified rare gas (helium, neon, argon, krypton, xenon, etc.) is obtained by removing impurities contained therein, such as nitrogen, hydrocarbon, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, at relatively low temperatures by the use of a getter. This getter is a two-component alloy of zirconium and vanadium, or a multi-component alloy containing, as well as zirconium and vanadium, at least one of chromium, nickel and cobalt.Type: GrantFiled: September 3, 1991Date of Patent: March 16, 1993Assignee: Japan Pionics Co., Ltd.Inventors: Koichi Kitahara, Kenji Ohtsuka, Noboru Takemasa, Shinobu Kamiyama
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Patent number: 5019364Abstract: A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material selected from copper arsenides, copper phosphides, copper silicides, copper selenides, copper borides or copper sulfides to remove oxygen contained in the crude gaseous hydride.Type: GrantFiled: November 13, 1990Date of Patent: May 28, 1991Assignee: Japan Pionics Co., Ltd.Inventors: Koichi Kitahara, Takashi Shimada, Keiichi Iwata
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Patent number: 4996030Abstract: A method for cleaning an exhaust gas comprising a base gas and at least one toxic component selected from the group consisting of arsine, phosphine, diborane and hydrogen selenide is disclosed. The method comprises contacting the exhaust gas with a molded cleaning agent having a composition consisting essentially of (1) cupric oxide, (2) manganese dioxide, and (3) at least one metal oxide selected from the group consisting of silicon oxide, aluminum oxide and zinc oxide and having a density of from 0.6 to 1.5 g/ml, said composition having a metal atomic ratio M/(M+Cu+Mn) in the range of from 0.02 to 0.70 and a metal atomic ratio Cu/(Cu+Mn) in the range of from 0.1 to 0.9; wherein Cu represents a number of gram atom of copper; Mn represents a number of gram atom of manganese; and M represents a total number of gram atom of silicon, aluminum and/or zinc, to remove the toxic component from the exhaust gas. The method is effective even at low temperatures below 10.degree. C.Type: GrantFiled: June 1, 1988Date of Patent: February 26, 1991Assignee: Japan Pionics, Ltd.Inventors: Koichi Kitahara, Takashi Shimada, Noboru Akita, Tadashi Hiramoto, Kohhei Sasaki
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Patent number: 4985745Abstract: The main surface of a first semiconductor substrate is bonded to the main surface of a second semiconductor substrate with an insulation film interposed therebetween to form a composite substrate. The first semiconductor substrate and insulation film are selectively etched to form an etched portion which reaches at least the second semiconductor substrate. An impurity layer with an impurity concentration different from that of the first semiconductor substrate is formed on or in the surface area exposed to the etched portion of the first and second semiconductor substrates. An epitaxial layer having an impurity concentration different from that of the impurity layer is formed in the etched portion. The first semiconductor substrate, impurity layer and epitaxial layer are planarized.Type: GrantFiled: January 3, 1989Date of Patent: January 15, 1991Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Kitahara, Yoshinori Natsume, Yoshinori Hosoki
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Patent number: 4976942Abstract: A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material from nickel arsenides, nickel phosphides, nickel silicides, nickel selenides, or nickel borides to remove oxygen contained in the crude gaseous hydride.Type: GrantFiled: September 26, 1989Date of Patent: December 11, 1990Assignee: Japan Pionics, Ltd.Inventors: Koichi Kitahara, Takashi Shimada, Keiichi Iwata, Noboru Akita
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Patent number: 4948748Abstract: A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates whose major surfaces are bonded to each other with an insulating layer interposed therebetween. In this substrate structure, an epitaxial layer is grown from part of the second semiconductor substrate, forming one element area, and another element area is formed in the first semiconductor substrate area and isolated from the epitaxial layer.Type: GrantFiled: August 21, 1989Date of Patent: August 14, 1990Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Kitahara, Yu Ohata, Tsuyoshi Kuramoto
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Patent number: 4910001Abstract: A method for cleaning a gas containing at least one toxic component selected from the group consisting of arsine, phosphine, monosilane, diborane, and hydrogen selenide, which comprises contacting the gas with a cleaning agent containing a molded composition comprising (1) manganese dioxide and (2) cupric oxide, having deposited thereon (3) a silver compound, wherein the weight ratio of cupric oxide to manganese dioxide ranges from 0.2 to 1.2 and the amount of the deposited silver compound ranges from 0.01 to 10.5% by weight based on the cleaning agent. By the cleaning method, the toxic component can be removed from a gas, e.g., air, at high efficiency and at a high rate even in case of sudden leakage of the toxic component out of a bomb.Type: GrantFiled: August 30, 1988Date of Patent: March 20, 1990Assignee: Japan Pionics, Ltd.Inventors: Koichi Kitahara, Noboru Akita, Takashi Shimada, Kohhei Sasaki, Tadashi Hiramoto
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Patent number: 4879584Abstract: A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.Type: GrantFiled: February 10, 1988Date of Patent: November 7, 1989Assignee: Kabushiki Kaisha ToshibaInventors: Yosuke Takagi, Yu Ohata, Koichi Kitahara, Tsuyoshi Kuramoto
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Patent number: 4743435Abstract: A method for cleaning an exhaust gas containing at least one toxic component selected from the group consisting of arsine, phosphine, diborane and hydrogen selenide is disclosed. The method comprises contacting the toxic component with a molded cleaning agent having a composition consisting essentially of (1) cupric oxide and (2) at least one metal oxide selected from the group consisting of silicon oxide, aluminum oxide and zinc oxide and having a density of from about 1.5 to about 3.5 g/ml, said composition having a metal atomic ratio M/(M+Cu) in the range of from about 0.02 to about 0.7 wherein Cu represents a number of gram atom of copper and M represents a total number of gram atom of silicon, aluminum and/or zinc, to remove the toxic component from the exhaust gas.Type: GrantFiled: March 13, 1985Date of Patent: May 10, 1988Assignee: Japan Pionics., Ltd.Inventors: Koichi Kitahara, Takashi Shimada
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Patent number: RE34025Abstract: A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.Type: GrantFiled: November 28, 1990Date of Patent: August 11, 1992Assignee: Kabushiki Kaisha ToshibaInventors: Yosuke Takagi, Yu Ohata, Koichi Kitahara, Tsuyoshi Kuramoto