Patents by Inventor Koichi Miyata

Koichi Miyata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200320970
    Abstract: An electronic horn for use, e.g., in a vehicle, includes a piezoelectric element (52) that excites a plate-shaped oscillator (51). A resonator (7) is provided with an opening (71) and covers forward of the oscillator such that a resonance space (S) is defined between the resonator and the oscillator. An inner cylinder (62) and an outer conical housing (63) are provided concentrically around the resonator. A circular cover (8) covers the inner cylinder (62) and the outer conical housing (63) from the front, such that a buffer chamber (BR), at least one first sound amplifying chamber (MH1), and a second sound amplifying chamber (MH2) are defined around an entire circumference of the opening of the resonator.
    Type: Application
    Filed: November 9, 2017
    Publication date: October 8, 2020
    Inventors: Katsunori UCHIMURA, Koichi TOYAMA, Junjiro YOSHIMURA, Toshihiko KAWAMURA, Yoshio MIYATA
  • Publication number: 20200313395
    Abstract: There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 1, 2020
    Inventors: Junichi OKAMOTO, Koichi KOBAYASHI, Takashi MIYATA
  • Publication number: 20200313393
    Abstract: A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W1>W3 and W2>W3, W1 is a width of the oxidized region of the first part, W2 is a width of the oxidized region of the second part, and W3 is a width of the oxidized region of the third part.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 1, 2020
    Inventors: Junichi OKAMOTO, Takashi HAGINO, Koichi KOBAYASHI, Takashi MIYATA
  • Publication number: 20200066243
    Abstract: An electronic horn includes a cover (8) on a front side of an intermediate element (6). A first passage (P1) within the horn is defined by a central portion (82) of the cover (8) that projects into a cylindrical interior of a cylindrical water-proofing wall (621). Second passages (P2, P3, P4) extend generally concentrically with respect to the first passage (P1) and are respectively defined by water-proofing walls (83, 84) that are formed on the cover (8) and project into the interior spaces of water-proofing walls (622, 633). The outermost second passage (P4) opens toward the forward direction. The first and second passages (P1-P4) extend in a back-and-forth path that prevents any rainwater, which has entered the interior of the horn through the opening of the outermost second passage (P4), from reaching a resonance space (7) defined between the resonator (7) and a sound-generating oscillator (51).
    Type: Application
    Filed: February 23, 2018
    Publication date: February 27, 2020
    Inventors: Katsunori UCHIMURA, Koichi TOYAMA, Yoshio MIYATA, Tetsuo MOMO, Toshihiko KAWAMURA
  • Patent number: 10546671
    Abstract: A voltage nonlinear resistor according to the present invention includes a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components. The accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: January 28, 2020
    Assignee: HITACHI, LTD.
    Inventors: Motoyuki Miyata, Junichiro Miyake, Koichi Tsuda
  • Publication number: 20080296098
    Abstract: The present invention prevents cracking of a brake shoe even when the sliding surface of the brake shoe is heated to a high temperature and provides high reliability. The present invention provides a brake shoe for elevator emergency stop which generates a braking force by pressing brake shoes against a guide rail and making the brake shoes 5 slide to stop an elevator cage in the event of anomalies, including the brake shoes made of a cast iron material having a plurality of grooves 3 formed in a direction substantially perpendicular to the guide rail and gear teeth which constitute a sliding surface with the brake shoes 5 formed as gaps between the grooves, wherein the depth of the grooves is 3 mm or more and not more than 1.7 times the width of the gear teeth.
    Type: Application
    Filed: June 4, 2008
    Publication date: December 4, 2008
    Inventors: Goro Sato, Takahiko Sawada, Masato Nakayama, Takashi Teramoto, Koichi Miyata, Mitsugu Omori, Hidetaka Zama, Toshihiko Gotoh
  • Patent number: 6080378
    Abstract: Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: June 27, 2000
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Yoshihiro Yokota, Takeshi Tachibana, Koichi Miyata, Koji Kobashi
  • Patent number: 5888846
    Abstract: A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: March 30, 1999
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Koichi Miyata, Koji Kobashi, Kohei Suzuki, Toshihisa Nozawa
  • Patent number: 5814149
    Abstract: A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.
    Type: Grant
    Filed: November 17, 1995
    Date of Patent: September 29, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Yoshihiro Shintani, Takeshi Tachibana, Kozo Nishimura, Koichi Miyata, Yoshihiro Yokota, Koji Kobashi
  • Patent number: 5757344
    Abstract: Disclosed is planar and vertical cold cathode emitter elements including an semiconducting diamond emitter portion having a high thermal resistance and a high breakdown voltage, thereby suppressing the deterioration of the electron emission characteristics and enabling the operation with a high electric power.
    Type: Grant
    Filed: September 30, 1992
    Date of Patent: May 26, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Koichi Miyata, Kozo Nishimura, Koji Kobashi
  • Patent number: 5755879
    Abstract: A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.
    Type: Grant
    Filed: November 17, 1995
    Date of Patent: May 26, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Yoshihiro Shintani, Takeshi Tachibana, Kozo Nishimura, Koichi Miyata, Yoshihiro Yokota, Koji Kobashi
  • Patent number: 5612548
    Abstract: A diamond light-emitting element capable of intense light emission at low operation voltage. A conductive substrate is disposed on a metallic plate such as copper to form an ohmic contact. A first diamond layer is formed on the conductive substrate. The boron atom concentration in the first diamond layer is 10.sup.19 cm.sup.-3 or higher. A second diamond layer is formed on the first diamond layer. The second diamond layer has a crystal defect density of 10.sup.11 cm.sup.-2 or higher. A second electrode is formed on the second diamond layer. A power supply is connected to the second electrode and the copper plate. When voltage is applied, holes in the first diamond layer recombine with electrons from the second electrode, and hence light emission takes place. The defect levels in the second diamond layer form the recombination centers to achieve high brightness at low operation voltage.
    Type: Grant
    Filed: February 12, 1996
    Date of Patent: March 18, 1997
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kimitsugu Saito, Koichi Miyata
  • Patent number: 5523160
    Abstract: The highly-oriented diamond film is a diamond film formed by chemical vapor deposition, with at least 95% of its area consisting of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} between the adjacent crystals satisfying (.vertline..DELTA..alpha..vertline..ltoreq.1.degree., .vertline..DELTA..beta..vertline..ltoreq.1.degree. and .vertline..DELTA..gamma..vertline..ltoreq.1.degree.) simultaneously. Thus obtained highly-oriented diamond film has few grain boundaries and high carrier mobility. And the area of the diamond film can be large.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: June 4, 1996
    Assignee: Kobe Steel USA, Inc.
    Inventors: Koji Kobashi, Kozo Nishimura, Koichi Miyata, Takeshi Tachibana, Brian R. Stoner
  • Patent number: 5512873
    Abstract: The highly-oriented diamond film thermistor has a temperature sensing part formed of a highly-oriented diamond film grown by chemical vapor deposition. This highly-oriented diamond film satisfies the conditions that at least 65% of the film surface area is covered by (100) or (111) planes of diamond and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy conditions, .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree., between adjacent crystal planes.
    Type: Grant
    Filed: June 10, 1994
    Date of Patent: April 30, 1996
    Inventors: Kimitsugu Saito, Koichi Miyata, John P. Bade, Jr., Brian R. Stoner, Jesko A. von Windheim, Scott R. Sahaida
  • Patent number: 5493131
    Abstract: The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least 80% of the surface area consists of (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..bet a..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent crystal planes. The diamond rectifying element thus constructed have an excellent electrical characteristics, and multiple of the elements can be produced on a large area at low cost. The diamond rectifying elements can be used for heat-resistant and high-power rectifying elements.
    Type: Grant
    Filed: September 28, 1994
    Date of Patent: February 20, 1996
    Assignee: Kobe Steel USA, Inc.
    Inventors: Koichi Miyata, Kimitsugu Saito, David L. Dreifus
  • Patent number: 5491348
    Abstract: A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.<10.
    Type: Grant
    Filed: September 28, 1994
    Date of Patent: February 13, 1996
    Assignee: Kobe Steel USA, Inc.
    Inventors: Hisasi Koyamao, Koichi Miyata, Kimitsugu Saito, David L. Dreifus, Brian R. Stoner
  • Patent number: 5442199
    Abstract: An undoped highly-oriented diamond film is formed on a single crystalline silicon substrate, a p-type highly-oriented diamond film is formed on the insulating diamond film. An ohmic electrode is formed on said p-type semiconducting diamond film and an ohmic electrode is also formed on a n-type .beta.-SiC layer. The highly-oriented diamond films are grown by chemical vapor deposition and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystals simultaneously satisfy the following relations: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline.5.degree. between adjacent crystal planes.
    Type: Grant
    Filed: May 14, 1993
    Date of Patent: August 15, 1995
    Assignee: Kobe Steel USA, Inc.
    Inventors: Kimitsugu Saito, Koichi Miyata, Kalyankumar Das
  • Patent number: 5427054
    Abstract: A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.
    Type: Grant
    Filed: June 6, 1994
    Date of Patent: June 27, 1995
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kimitsugu Saito, Koichi Miyata
  • Patent number: 5373172
    Abstract: A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.
    Type: Grant
    Filed: January 4, 1993
    Date of Patent: December 13, 1994
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Koji Kobashi, Koichi Miyata, Kazuo Kumagai, Shigeaki Miyauchi, Yuichi Matsui
  • Patent number: 5371383
    Abstract: A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..
    Type: Grant
    Filed: May 14, 1993
    Date of Patent: December 6, 1994
    Assignee: Kobe Steel USA Inc.
    Inventors: Koichi Miyata, Kimitsugu Saito, David L. Dreifus, Brian R. Stoner