Patents by Inventor Koichi Murata

Koichi Murata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220190114
    Abstract: A vertical metal oxide semiconductor field effect transistor, including a starting substrate of a first conductivity type, a second first-conductivity-type epitaxial layer provided on a first surface of the starting substrate via a first first-conductivity-type epitaxial layer, a first semiconductor region of the first conductivity type provided as a portion of the second first-conductivity-type epitaxial layer, a second-conductivity-type epitaxial layer forming a pn junction interface with the second first-conductivity-type epitaxial layer and supplying a minority carrier to the second first-conductivity-type epitaxial layer, a plurality of second semiconductor regions of the first conductivity type selectively provided in the second-conductivity-type epitaxial layer, a plurality of trenches penetrating through the second semiconductor regions and the second-conductivity-type epitaxial layer, and a plurality of gate electrodes provided in the trenches via gate insulating films.
    Type: Application
    Filed: October 29, 2021
    Publication date: June 16, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Takeshi TAWARA, Hidekazu TSUCHIDA, Koichi MURATA
  • Publication number: 20220173001
    Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.
    Type: Application
    Filed: November 24, 2021
    Publication date: June 2, 2022
    Applicant: Showa Denko K.K.
    Inventors: Naoto ISHIBASHI, Koichi MURATA, Hidekazu TSUCHIDA
  • Publication number: 20220146564
    Abstract: A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.
    Type: Application
    Filed: November 5, 2021
    Publication date: May 12, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Koichi Murata, Isaho KAMATA, Hidekazu TSUCHIDA, Akira MIYASAKA
  • Publication number: 20220086368
    Abstract: A vehicular display system shows an image of a surrounding area of a vehicle in a superior visibility mode. Embodiments include an imaging unit that captures an image of the surrounding area of the vehicle; an image processing unit that converts the image captured by the imaging unit into a view image of the area seen from a predetermined virtual viewpoint in the cabin; and a display unit that shows the view image generated by the image processing unit. The image processing unit can generate, as the view image, a first view image acquired when a first direction is seen from the virtual viewpoint, and a second view image acquired when a second direction differing from the first direction is seen from the virtual viewpoint. Each of the first and second view images is shown at a horizontal angle of view that corresponds to a stable visual field.
    Type: Application
    Filed: September 8, 2021
    Publication date: March 17, 2022
    Applicant: MAZDA MOTOR CORPORATION
    Inventors: Daichi SUGAWARA, Koichi MURATA, Erika HORI, Tomonori OHTSUBO, Yoshiaki MATSUBA
  • Publication number: 20220086400
    Abstract: A vehicular display system shows a view image including a blind area with superior visibility. Embodiments include an imaging unit that captures an image of a surrounding area of a vehicle; an image processing unit that converts the image into a view image of the surrounding area of the vehicle seen from inside a cabin; and a display unit. The image processing unit generates a rear-view image acquired when an area behind the vehicle is seen from a first virtual viewpoint located in the cabin, and a front-view image acquired when an area in front of the vehicle is seen from a second virtual viewpoint located behind the first virtual viewpoint in the cabin. The display unit shows the rear-view image when the vehicle travels backward, the front-view image when the vehicle travels forward, and shows both of the view images at substantially the same angle of view.
    Type: Application
    Filed: September 8, 2021
    Publication date: March 17, 2022
    Applicant: MAZDA MOTOR CORPORATION
    Inventors: Daichi SUGAWARA, Koichi MURATA, Erika HORI, Tomonori OHTSUBO, Yoshiaki MATSUBA
  • Patent number: 11183590
    Abstract: A semiconductor device including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided at a front surface of the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a first semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer and having an impurity concentration higher than that of the semiconductor substrate, a trench penetrating the first semiconductor region and the second semiconductor layer, to reach the first semiconductor layer, and a gate electrode provided in the trench, via a gate insulating film. The trench has a sidewall that includes a terrace portion, surface roughness of the terrace portion being at most 0.1 nm.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: November 23, 2021
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Tae Tawara, Shinji Fujikake, Aki Takigawa, Hidekazu Tsuchida, Koichi Murata
  • Publication number: 20210269591
    Abstract: A fluorinated ether compound and a composition capable of forming a light resistant surface layer and an article are provided. The fluorinated ether compound of the present invention has a poly(oxyfluoroalkylene) chain, a reactive silyl group and a group (A) represented by —NR—C(O)— (wherein R is a hydrogen atom or an alkyl group), wherein the carbonyl carbon in the group (A) is bonded to a carbon atom, and the poly(oxyfluoroalkylene) chain is located at the nitrogen end of the group (A).
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Applicant: AGC Inc.
    Inventors: Keigo MATSUURA, Eiichiro ANRAKU, Ryuta TAKASHITA, Koki WATANABE, Makoto UNO, Koichi MURATA, Takafumi KAWAKAMI
  • Publication number: 20210178447
    Abstract: A vehicle panel roller hemming device includes roller hem equipment including: a positioning mechanism configured to position an outer panel on a hemming die by a locator; and a suction and fixing mechanism configured to suck and fix a lower face of the outer panel by a vacuum pad. The suction and fixing mechanism includes a pad base part; a skirt part continuously rising with a predetermined thickness from an edge of the pad base part and including an opening on an end edge thereof; a decompression space formed by an inner wall of the pad base part and an inner wall of the skirt part; and a suction through pipe penetrating the pad base part and communicating with the decompression space, and configured to suck air inside the decompression space.
    Type: Application
    Filed: June 10, 2019
    Publication date: June 17, 2021
    Inventors: Shinichi TAKATSU, Koichi MURATA, Yoshihiro AOKI
  • Patent number: 10981584
    Abstract: A wheel load adjusting apparatus used in a railcar, and the railcar includes: first and second air springs arranged between a carbody and a first bogie so as to be spaced apart from each other in a car width direction; third and fourth air springs arranged between the carbody and a second bogie so as to be spaced apart from each other in the car width direction; and first to fourth automatic level controlling valves provided upstream of the first four air springs and configured to adjust heights of the four air springs to maintain constant height of the air springs, wherein when the railcar passes through a curve, the wheel load adjusting apparatus limits an air supply/air discharge operation of at least one of the four automatic level controlling valves to suppress an increase in a pressure difference between at least two of the four air springs.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: April 20, 2021
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Yuta Yoshimatsu, Takafumi Okamoto, Takehiro Nishimura, Yoshi Sato, Keiichiro Kamura, Koichi Murata, Hirohide Matsushima
  • Publication number: 20210074850
    Abstract: A semiconductor device including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided at a front surface of the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a first semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer and having an impurity concentration higher than that of the semiconductor substrate, a trench penetrating the first semiconductor region and the second semiconductor layer, to reach the first semiconductor layer, and a gate electrode provided in the trench, via a gate insulating film. The trench has a sidewall that includes a terrace portion, surface roughness of the terrace portion being at most 0.1 nm.
    Type: Application
    Filed: August 3, 2020
    Publication date: March 11, 2021
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Tae TAWARA, Shinji FUJIKAKE, Aki TAKIGAWA, Hidekazu TSUCHIDA, Koichi MURATA
  • Patent number: 10913470
    Abstract: A railcar steering bogie includes a bogie frame, a wheelset, an axle box suspension, a steering mechanism configured to steer the wheelset, a brake unit, and a brake unit support link. The brake unit includes: a main body frame; a brake shoe supported by the main body frame and pressed against a wheel tread of the wheel during braking. The brake unit support link couples the axle box suspension and the brake unit and transmits displacement of the axle box in a car longitudinal direction to the brake unit at least during steering performed by the steering mechanism. The brake unit support link restricts the brake unit from being displaced outward in a car width direction by a predetermined distance or more during the braking. At least one of a side surface of the brake unit support link and a side surface of the brake unit includes a sliding surface.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: February 9, 2021
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takehiro Nishimura, Yoshi Sato, Yukitaka Taga, Yousuke Tsumura, Keiichiro Kamura, Fumikazu Kounoike, Koichi Murata, Francois Olivier Uchida, Yuta Yoshimatsu
  • Patent number: 10868122
    Abstract: During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 ?m from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: December 15, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Takeshi Tawara, Koji Nakayama, Yoshiyuki Yonezawa, Hidekazu Tsuchida, Koichi Murata
  • Patent number: 10800436
    Abstract: A railcar steering bogie includes: a bogie frame including a cross beam; pair of axles; axle boxes accommodating bearings; axle box suspensions each including a coupling member coupling the corresponding axle box and bogie frame while allowing relative displacement in a car longitudinal direction; plate spring extending in the car longitudinal direction and including car longitudinal direction end portions extending obliquely upward along the car longitudinal direction and supported above the respective axle boxes and a car longitudinal direction middle portion unfixedly arranged under the cross beam; support seats including respective inclined upper surfaces and supporting the both respective longitudinal direction end portions of the plate spring; and gap bodies each provided between an upper surface of the corresponding axle box suspension and a lower surface of the corresponding support seat and configured to allow displacement of the axle box suspension and the support seat in the car longitudinal direct
    Type: Grant
    Filed: December 5, 2016
    Date of Patent: October 13, 2020
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takehiro Nishimura, Yoshi Sato, Yukitaka Taga, Yousuke Tsumura, Keiichiro Kamura, Fumikazu Kounoike, Koichi Murata, Francois Olivier Uchida, Yuta Yoshimatsu
  • Patent number: 10730534
    Abstract: A railcar steering bogie includes: a bogie frame supporting a bolster such that the bolster is swingable relative to the bogie frame about a vertical axis; two wheelsets each including an axle and a pair of wheels; and a steering mechanism configured to steer at least one of the two wheelsets in accordance with the swinging of the bolster relative to the bogie frame. The steering mechanism includes: a steering lever configured to turn relative to the bogie frame about a fulcrum axis; a coupling link coupling the bolster and the steering lever and configured to operate in conjunction with the swinging of the bolster relative to the bogie frame; and a steering link coupled to the steering lever and configured to steer the wheelset in conjunction with the turning of the steering lever. The steering link is coupled to the steering lever by a pin member.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: August 4, 2020
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takehiro Nishimura, Yoshi Sato, Yukitaka Taga, Yousuke Tsumura, Keiichiro Kamura, Fumikazu Kounoike, Koichi Murata, Francois Olivier Uchida, Yuta Yoshimatsu
  • Patent number: 10730533
    Abstract: A railcar steering bogie includes: a bogie frame supporting a bolster such that the bolster is swingable relative to bogie frame about a vertical axis; two wheelsets; axle box suspensions including respective axle beams coupling corresponding axle boxes to bogie frame, the axle boxes accommodating respective bearings supporting corresponding axles; and a steering mechanism steering at least one of the two wheelsets in accordance with the bolster's swinging relative to the bogie frame. The steering mechanism includes: a steering lever configured to turn relative to the bogie frame about fulcrum axis; a coupling link coupling the bolster and steering lever and configured to operate in conjunction with the bolster's swinging relative to the bogie frame; and at least one steering link coupling steering lever and axle beam and configured to steer the corresponding wheelset by displacing corresponding axle box through the corresponding axle beam in conjunction with steering lever's turning.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: August 4, 2020
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takehiro Nishimura, Yoshi Sato, Yukitaka Taga, Yousuke Tsumura, Keiichiro Kamura, Fumikazu Kounoike, Koichi Murata, Francois Olivier Uchida, Yuta Yoshimatsu
  • Patent number: 10676112
    Abstract: An axle box suspension includes: an axle beam including an axle beam main body portion extending from the axle box in a car longitudinal direction and a pin portion projecting from a tip end of the axle beam main body portion in the car longitudinal direction; a tubular elastic bushing including an inner tube portion, an outer tube portion, and an elastic portion interposed between the inner tube portion and the outer tube portion, the inner tube portion being fitted to the pin portion; an adapter attached to the outer tube portion and coupling the axle beam and the bogie frame; and a first stopper attached to the pin portion and configured to, when the axle box is displaced relative to the bogie frame toward one side in the car longitudinal direction by a predetermined distance, contact the adapter to restrict displacement of the axle box.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: June 9, 2020
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takehiro Nishimura, Yoshi Sato, Yukitaka Taga, Yousuke Tsumura, Keiichiro Kamura, Fumikazu Kounoike, Koichi Murata, Francois Olivier Uchida, Yuta Yoshimatsu
  • Patent number: 10665681
    Abstract: On a front surface of an n+-type starting substrate containing silicon carbide, a pin diode is configured having silicon carbide layers constituting an n+-type buffer layer, an n?-type drift layer, and a p+-type anode layer sequentially formed by epitaxial growth. The n+-type buffer layer is formed by so-called co-doping of nitrogen and vanadium, which forms a recombination center, together with an n-type impurity. The n+-type buffer layer includes a first part disposed at a side of a second interface of the buffer layer with the substrate and a second part disposed at side of a first interface of the buffer layer with the drift layer. The vanadium concentration in the second part is lower than that in the first part. The vanadium concentration in the second part is at most one tenth of the maximum value Vmax of the vanadium concentration in the n+-type buffer layer.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: May 26, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Takeshi Tawara, Hidekazu Tsuchida, Koichi Murata
  • Patent number: 10522667
    Abstract: The SiC-IGBT includes a p-type collector layer, an n?-type voltage-blocking-layer provided on the collector layer, p-type base regions provided on the n?-type voltage-blocking-layer, n+-type emitter regions provided in an upper portion of the p-type base region, a gate insulating film provided in an upper portion of the voltage-blocking-layer, and a gate electrode provided on the gate insulating film. The p-type buffer layer has thickness of five micrometers or more and 20 micrometers or less and is doped with Al at impurity concentration of 5×1017 cm?3 or more and 5×1018 cm?3 or less and doped with B at impurity concentration of 2×1016 cm?3 or more and less than 5×1017 cm?3.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: December 31, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Takeshi Tawara, Hidekazu Tsuchida, Koichi Murata
  • Publication number: 20190393312
    Abstract: During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 ?m from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.
    Type: Application
    Filed: May 31, 2019
    Publication date: December 26, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Takeshi TAWARA, Koji Nakayama, Yoshiyuki Yonezawa, Hidekazu Tsuchida, Koichi Murata
  • Patent number: 10508410
    Abstract: An automatic swing device for a work machine is capable of performing a sieve operation in the posture where a work device is always at a posture suitable for sieve operation. An automatic swing device includes a posture sensor that detects a posture of a work device, and a controller that outputs signals to operate at least a stick cylinder and a bucket cylinder of the work device. The controller has an automatic swing mode in which the work device is automatically swung while the posture detected by the posture sensor is maintained to be in the range of a predetermined posture.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: December 17, 2019
    Assignee: Caterpillar SARL
    Inventors: Shota Hoshaku, Koichi Murata, Masashi Shibata