Patents by Inventor Koichi Nagakura

Koichi Nagakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10192774
    Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: January 29, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
  • Publication number: 20180366334
    Abstract: A method capable of increasing a degree of freedom of process conditions that can be set in a plasma treatment while limiting deterioration in the electrical characteristics of a silicon or metal oxide film exposed to plasma, in performing the plasma treatment on a substrate. The method includes: processing a substrate on which a silicon or metal oxide film is formed, with plasma obtained by plasmarizing a process gas composed of a halogen compound; and subsequently, heating the substrate at a temperature of 450 degrees C. or higher in an inert gas atmosphere or a vacuum atmosphere in a state where the metal oxide film exposed to the plasma is exposed. Thus, deterioration in the characteristics of the oxide film caused by the plasma treatment are restored.
    Type: Application
    Filed: November 21, 2016
    Publication date: December 20, 2018
    Inventors: Koichi NAGAKURA, Tamotsu MORIMOTO, Shuichiro UDA, Takeshi SAITO
  • Publication number: 20170301579
    Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 19, 2017
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
  • Publication number: 20170243725
    Abstract: In a plasma processing apparatus, insulating members are horizontally and separately arranged above a mounting unit in a processing chamber. Each insulating member serves as a partition between a vacuum atmosphere in the processing chamber and an external atmosphere of the processing chamber. Antennas are provided on the respective insulating members to generate an inductively coupled plasma. A first processing gas is supplied into the processing chamber and adsorbed onto a substrate on the mounting unit. A second processing gas is turned into a plasma by power supplied from the antennas and is supplied to activate the first processing gas adsorbed onto the substrate or react with the first processing gas adsorbed onto the substrate. The supply of the first processing gas and the supply of the second processing gas are alternately repeated multiple times with a process of evacuating an inside of the processing chamber interposed therebetween.
    Type: Application
    Filed: February 16, 2017
    Publication date: August 24, 2017
    Inventors: Ryoji YAMAZAKI, Susumu SAITO, Koichi NAGAKURA, Akitaka SHIMIZU, Hidetoshi KINOSHITA
  • Publication number: 20170200618
    Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.
    Type: Application
    Filed: January 10, 2017
    Publication date: July 13, 2017
    Inventors: Keiko HADA, Akitaka SHIMIZU, Koichi NAGAKURA, Mitsuhiro TACHIBANA
  • Patent number: 8124539
    Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
    Type: Grant
    Filed: August 4, 2010
    Date of Patent: February 28, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
  • Patent number: 8071473
    Abstract: An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate. A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-containing film and transferring a pattern of a pattern mask stacked on the silicon-containing film onto the silicon-containing film to form a patterned silicon-containing film; removing the pattern mask using plasma to expose the surface of the silicon-containing film; and etching the surface of the organic film through the patterned silicon-containing film by use of oxygen active species in plasma to form a concave portion on the organic film. Thereafter, the silicon-containing film is sputtered to form silicon-containing protection films on the inner wall surfaces of the concave portion. The concave portion is further etched in its depth direction through the patterned silicon-containing film by use of oxygen active species in plasma.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: December 6, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Kazuki Narishige, Koichi Nagakura
  • Publication number: 20110000883
    Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
    Type: Application
    Filed: August 4, 2010
    Publication date: January 6, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
  • Publication number: 20090045165
    Abstract: An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate. A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-containing film and transferring a pattern of a pattern mask stacked on the silicon-containing film onto the silicon-containing film to form a patterned silicon-containing film; removing the pattern mask using plasma to expose the surface of the silicon-containing film; and etching the surface of the organic film through the patterned silicon-containing film by use of oxygen active species in plasma to form a concave portion on the organic film. Thereafter, the silicon-containing film is sputtered to form silicon-containing protection films on the inner wall surfaces of the concave portion. The concave portion is further etched in its depth direction through the patterned silicon-containing film by use of oxygen active species in plasma.
    Type: Application
    Filed: August 13, 2008
    Publication date: February 19, 2009
    Inventors: Kazuki Narishige, Koichi Nagakura
  • Publication number: 20040261946
    Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
    Type: Application
    Filed: April 21, 2004
    Publication date: December 30, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
  • Patent number: 5753365
    Abstract: A rubber composition includes a rubber component and particulates of a crystalline syndiotactic-1,2-polybutadiene resin dispersed therein. The particulates have an average particle diameter of 1 to 500 .mu.m, and the melting point of the crystalline syndiotactic-1,2-polybutadiene resin is not less than 110.degree. C. The compounding ratio of the resin is 5 to 60 parts by weight relative to 100 parts by weight of the rubber component. The rubber composition is useful for tires, other rubber articles, etc. With respect to tires in particular, a pneumatic tire includes a rubber composition used for a tread, wherein the rubber composition includes a rubber component and particulates of crystalline syndiotactic-1,2-polybutadiene resin. The matrix portion of the tread rubber other than the above particulates is preferably a foamed rubber.
    Type: Grant
    Filed: February 5, 1996
    Date of Patent: May 19, 1998
    Assignees: Bridgestone Corporation, Ube Industries, Ltd.
    Inventors: Yoshiyuki Morimoto, Koji Yamauchi, Seiichiro Iwafune, Tatsuro Hamada, Masanori Aoyama, Eiji Yamanaka, Koichi Nagakura, Koji Ishiguchi
  • Patent number: 4602063
    Abstract: A process for producing a reinforced rubber composition comprising the steps of:dispersing fine fibers of thermoplastic polymer having ##STR1## groups in a continuous phase comprising vulcanizable synthetic rubber, other than butadiene rubber, containing a tackifier incorporated thereinto; andgrafting the vulcanizable synthetic rubber onto the thermoplastic polymer at the interface of the fine fibers through a novolak type phenol resin.This reinforced rubber composition is capable of providing a vulcanizate having an excellent strength and modulus.
    Type: Grant
    Filed: December 26, 1984
    Date of Patent: July 22, 1986
    Assignee: Ube Industries, Ltd.
    Inventors: Shinji Yamamoto, Kohei Kaijiri, Koichi Nagakura