Abstract: A semiconductor memory device includes a first wiring, a second wiring, a memory pillar, a semiconductor layer, and a contact plug. The second wiring is provided above the first wiring in a first direction. The memory pillar penetrating at least one of a portion of the first wiring or a portion of the second wiring in the first direction. The semiconductor layer extends in the first direction provided in the memory pillar. The contact plug contains a metal and has a lower surface provided in the memory pillar, and the lower surface is in contact with the semiconductor layer below an upper surface of the second wiring.

Abstract: There is provided an electrically driven vehicle that well balances calculation volumes and communication volumes of two control devices configured to drive and control motors for driving. The electrically driven vehicle comprises at least one motor for driving and a first control device and a second control device configured to control the motor. The first control device is configured to calculate a target torque that is to be output from the motor, based on information including an accelerator position, to calculate a current command based on the calculated target torque, and to send the calculated current command to the second control device. The second control device is configured to use the current command, a phase current of the motor and a rotational angle of the motor such as to drive the motor by feedback control.

Abstract: According to one embodiment, a semiconductor memory device comprises a substrate, a first conductive layer, and a second conductive layer arranged in this order in a first direction and separated from each other, a first semiconductor film extending in the first direction, intersecting the first conductive layer, and being in contact with the second conductive layer, and a first charge storage film arranged between the first semiconductor film and the first conductive layer, and being in contact with the second conductive layer, wherein the first semiconductor film includes a first portion formed of an n-type semiconductor at approximately a same height as the first conductive layer.

Abstract: A semiconductor device including a first chip and a second chip. The first chip includes: a first substrate; a first transistor that is provided on the first substrate; and a first pad that is provided above the first transistor and that is electrically connected to the first transistor. The second chip includes: a second pad that is provided on the first pad; a second substrate that is provided above the second pad and that includes a first diffusion layer and a second diffusion layer, at least one of the first diffusion layer and the second diffusion layer being electrically connected to the second pad; and an isolation insulating film or an isolation trench that extends at least from an upper surface of the second substrate to a lower surface of the second substrate within the second substrate and that isolates the first diffusion layer from the second diffusion layer.

Abstract: In one embodiment, a semiconductor device includes first electrode layers spaced from one another in a first direction, and second electrode layers provided above the first electrode layers, and spaced from one another in the first direction. The device further includes a first columnar portion extending in the first direction in the first electrode layers, and including a first semiconductor layer, and a second columnar portion provided on the first columnar portion, extending in the first direction in the second electrode layers, and including a second semiconductor layer. The first columnar portion includes a first portion having a first width, and a second portion having a second width larger than the first width above the first portion. The second columnar portion includes a third portion having a third width, and a fourth portion having a fourth width larger than the third width above the third portion.

Abstract: Provided is an encoder, which is provided in a driving apparatus comprising a motor section configured to drive a first displacement section, which is connected to a fixed section via an elastic body, and a transmission section configured to convert a displacement of the first displacement section and transmit the displacement to the second displacement section, comprising: a first detector configured to detect first displacement information of the first displacement section; a second detector configured to detect second displacement information of the second displacement section; a third detector configured to detect third displacement information of the motor section relative to the fixed section; and a computing section configured to obtain information related to a driving amount of the motor section using the first displacement information and the second displacement information, and obtain information of a load on the motor section using the third displacement information.

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

Abstract: A power controller for an electric vehicle may include: an input terminal connected to a DC power source; a first inverter connected to the input terminal and configured to convert power of the DC power source to driving power for a first electric motor for propulsion; a second inverter connected to the input terminal and configured to convert the power of the DC power source to driving power for a second electric motor; and a switch configured to electrically disconnect the second inverter from the first inverter and the input terminal.

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

Abstract: A semiconductor device including a first chip and a second chip. The first chip includes: a first substrate; a first transistor that is provided on the first substrate; and a first pad that is provided above the first transistor and that is electrically connected to the first transistor. The second chip includes: a second pad that is provided on the first pad; a second substrate that is provided above the second pad and that includes a first diffusion layer and a second diffusion layer, at least one of the first diffusion layer and the second diffusion layer being electrically connected to the second pad; and an isolation insulating film or an isolation trench that extends at least from an upper surface of the second substrate to a lower surface of the second substrate within the second substrate and that isolates the first diffusion layer from the second diffusion layer.

Abstract: There is provided an electrically driven vehicle that well balances calculation volumes and communication volumes of two control devices configured to drive and control motors for driving. The electrically driven vehicle comprises at least one motor for driving and a first control device and a second control device configured to control the motor. The first control device is configured to calculate a target torque that is to be output from the motor, based on information including an accelerator position, to calculate a current command based on the calculated target torque, and to send the calculated current command to the second control device. The second control device is configured to use the current command, a phase current of the motor and a rotational angle of the motor such as to drive the motor by feedback control.

Abstract: A power converter may include first and second switching elements connected in parallel each other, first and second diodes connected to positive terminals of the switching elements, first and second current sensors, a reactor, and a controller that alternately turns on the first and second switching elements. One end of the reactor may be connected to first and second intermediate points. The first and second current sensors may detect currents flowing between the reactor and the first intermediate point and between the reactor and the second intermediate point, respectively. The first and second current sensors may respectively include first and second magnetism collecting ring cores, into which a first conductor between the reactor and the first intermediate point and a second conductor between the reactor and the second intermediate point are respectively inserted.

Abstract: Provided is a carrier for a developer of an electrostatic latent image, the carrier including a core particle, and a resin layer covering the core particle, where the resin layer includes metal compound particles, wherein the metal compound particles include magnesium compound particles or barium compound particles, and an exposed amount B (atomic %) of the magnesium or the barium on a surface of the carrier particle satisfies a relationship below: 10.0?B ?1.2.

Abstract: A carrier is provided including a core particle and a resin layer coating the surface of the core particle. The resin layer includes fine metal particles, and a detected metal element amount A obtained by X-ray photoelectron spectrometry of the surface of the carrier is in a range of 4.0 atomic %?A?20.0 atomic % and an average major-axis length B of the fine metal particle exposing from the resin layer is in a range of 100 nm?B?800 nm.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Abstract: A carrier including a resin layer including at least one kind of particles, wherein the at least one kind of the particles are particles of barium sulfate, wherein an amount of Ba detected is 0.3 atomic % or greater in a Ba analysis through X-ray photoelectron spectroscopy (XPS) of the carrier, and wherein circle-equivalent diameters of the particles of the barium sulfate are 400 nm or greater but 900 nm or smaller.

Abstract: A developing device, including: a developer containing toner and carrier; and developer bearer configured to have surface thereof bear the developer and endlessly move, and to develop latent image over surface of latent image bearer by supplying toner in developer to latent image in developing region facing the latent image bearer, wherein carrier contains fine particles, value X in volume resistivity R (=10X) (?·cm) of carrier is 11.5-16.0, developer bearer includes: magnetic field generating unit including a plurality of magnetic poles; and developing sleeve having a cylindrical shape enclosing magnetic field generating unit, and configured to bear developer over outer circumferential surface of cylindrical shape by magnetic force of the magnetic field generating unit and perform surface moving by rotating relative to developing device body, and developing device includes developing sleeve voltage applying unit configured to apply AC component-containing voltage to developing sleeve.

Abstract: Provided is a carrier for a developer of an electrostatic latent image, the carrier including a core particle, and a resin layer covering the core particle, where the resin layer includes metal compound particles, wherein the metal compound particles include magnesium compound particles or barium compound particles, and an exposed amount B (atomic %) of the magnesium or the barium on a surface of the carrier particle satisfies a relationship below: 10.0?B?1.2.

Abstract: A synthetic controlled variable is obtained by obtaining a synthetic quantity using measurement results of a first and a second measuring instruments and corresponding gains (or transfer function) and synthesizing the synthetic quantity and one of the measurement results of the first and the second measuring instruments, respectively, via a high pass filter and a low pass filter. A feedback control system is structured that obtains a control input using a synthetic controlled variable and a desired value, and gives a plant the control input. This makes adding of a high pass filter for removing offset of installation position of the first and the second measuring instruments no longer necessary, and allows a driving system which controls robust driving in a high bandwidth of a plate stage regardless of bandwidth in which resonance appears to be designed.

Abstract: A power supply system comprises a first battery, a second battery, an output electric circuit, a first switching element, a second switching element, and a third switching element. The output electric circuit includes a first electric circuit and a second electric circuit. The second electric circuit has a potential lower than a potential of the first electric circuit. The first, second and third switching elements are provided in series with each other from the first electric circuit toward the second electric circuit. The first battery is provided in parallel with the second switching element. The second battery is provided in parallel with a series connection between the second switching element and the third switching element.