Abstract: The nanoparticle assembly includes nanoparticles having an average primary particle size of 60 nm or less, and the nanoparticle assembly has a diameter of more than 500 nm and 5 ?m or less.

Abstract: The nanoparticle assembly includes nanoparticles having an average primary particle size of 60 nm or less, and the nanoparticle assembly has a diameter of more than 500 nm and 5 ?m or less.

Abstract: An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.

Abstract: An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.

Abstract: A ta-C thin film (1A) is formed by laminating a first unit structure (11) and a second unit structure (12) in this order on a base material (10). The first unit structure (11) has mutually different amounts of sp3 bonding in a first layer (11a) and a second layer (11b), and has mutually different amounts of sp3 bonding in the second layer (11b) and a third layer (11c). The second unit structure (12) has mutually different amounts of sp3 bonding in a first layer (12a) and a second layer (12b), and has mutually different amounts of sp3 bonding in the second layer (12b) and a third layer (12c).

Abstract: An optical device comprises a substrate provided with an insulation portion transmitting light, a first electrode and a second electrode transmitting light provided at said substrate sandwiching said insulation portion, and an output circuit to output voltage to said first electrode and second electrode so as to change an electric field of a surface of said substrate, wherein said first and second electrodes comprise main component which is identical with said insulation portion, and an electric resistivity is lower with respect to said insulation portion.

Abstract: Provided is a manufacturing method for manufacturing a film-formed article by using sputtering to form a film including a constituent element of a target on a substrate. The manufacturing method comprises setting a distance d between the target and the substrate in a range from 0.5 times to 1.5 times a mean free path of the constituent element in the sputtering gas.

Abstract: An optical device comprises a substrate provided with an insulation portion transmitting light, a first electrode and a second electrode transmitting light provided at said substrate sandwiching said insulation portion, and an output circuit to output voltage to said first electrode and second electrode so as to change an electric field of a surface of said substrate, wherein said first and second electrodes comprise main component which is identical with said insulation portion, and an electric resistivity is lower with respect to said insulation portion.