Abstract: In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Abstract: A worm wheel is provided in which a step is not formed near a tooth face meshing with a worm, and noise does not easily occur during power transmission. A worm wheel 1 includes a circular arc-shaped tooth section 5 that is a portion meshing with a worm 101 and configuring a circular tube worm gear, and a helical tooth section 4 that is connected to one end side of the circular arc-shaped tooth section 5. An angle of torsion at an arbitrary reference point 14 in a tooth depth direction of a tooth 3 on a boundary 7 between the circular arc-shaped tooth section 5 and the helical tooth section 4 is equal to an angle of torsion at a second reference point 15 corresponding to the first reference point 14 in the tooth depth direction of the tooth 3 in a diameter portion P0 of a throat of the circular arc-shaped section 5. As a result, a step is not formed on a tooth face on the boundary 7 between the circular arc-shaped tooth section 5 and the helical tooth section 4.

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract: Provided is a method for producing metal by molten salt electrolysis, by which the metal can be efficiently produced. A method for producing metal by using an apparatus for molten salt electrolysis having an electrolytic cell and an electrode pair, wherein the molten salt electrolysis in the electrolytic cell and heating of the molten salt by a Joule heat generation between a pair of electrodes for electrolysis are simultaneously performed; and wherein the apparatus for molten salt electrolysis has at least two sets of electrode pair, and at least one set of the electrode pairs is electrically opened.

Abstract: A semiconductor device manufacturing method includes forming a dielectric film on a semiconductor substrate; forming a resist pattern on the dielectric film; irradiating an ionized gas cluster to a region of the dielectric film where the resist pattern is not formed; and removing a part of the region of the dielectric film in a thickness direction thereof where the ionized gas cluster is irradiated by a wet etching. The dielectric film serves as a gate insulating film, and two regions having different thicknesses of the dielectric film are formed.

Abstract: A method of manufacturing a substrate includes applying solder resist ink containing a mixing resin of epoxy-based resin and acrylic-based resin on at least one surface of a substrate body to form a solder resist layer, and irradiating a predetermined portion of the solder resist layer with ultraviolet rays and controlling an amount of irradiation of the ultraviolet rays irradiated to the predetermined of the solder resist layer to form the predetermined portion in transmissivity that transmits light.

Abstract: A storage apparatus which contains a plurality of microprocessors includes a virtual queue which stores a virtual command which is used in the storage apparatus; a real queue which stores a real command based on an actual communication protocol; a first pointer which is updated when the virtual command is stored in the virtual queue; a second pointer which is updated when the first pointer is updated; a checking unit which detects an update to the first pointer and updates the second pointer; and a controller. Upon detecting that the second pointer has been updated by the checking unit, the controller references the second pointer and the first pointer, and, after reading the virtual command stored in the virtual queue and converting the virtual command to the real command, stores the real command in the real queue.

Abstract: A storage apparatus which contains a plurality of microprocessors includes a virtual queue which stores a virtual command which is used in the storage apparatus; a real queue which stores a real command based on an actual communication protocol; a first pointer which is updated when the virtual command is stored in the virtual queue; a second pointer which is updated when the first pointer is updated; a checking unit which detects an update to the first pointer and updates the second pointer; and a controller. Upon detecting that the second pointer has been updated by the checking unit, the controller references the second pointer and the first pointer, and, after reading the virtual command stored in the virtual queue and converting the virtual command to the real command, stores the real command in the real queue.

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract: It is provided a storage system for inputting and outputting data in accordance with a request from a host computer, comprising: at least one processor for processing data requested to be input or output; a plurality of transfer controllers for transferring data between memories in the storage system; and at least one transfer sequencer for requesting a data transfer to the plurality of transfer controllers in accordance with an instruction from the processor. The processor transmits a series of data transfer requests to the at least one transfer sequencer. The at least one transfer sequencer requests a data transfer to each of the plurality of transfer controllers based on the series of data transfer requests. The each transfer controller transfers data between the memories in accordance with an instruction from the at least one transfer sequencer.

Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract: A semiconductor device manufacturing method includes forming a first high-k insulating film on a processing target object; performing a crystallization heat-treatment process on the first high-k insulating film at a temperature equal to or higher than about 650° C. for a time less than about 60 seconds; and forming, on the first high-k insulating film, a second high-k insulating film containing a metal element having an ionic radius smaller than that of a metal element of the first high-k insulating film and having a relative permittivity higher than that of the first high-k insulating film.

Abstract: A semiconductor device manufacturing method includes forming a dielectric film on a semiconductor substrate; performing a heat treatment on the dielectric film; forming an electrode on a first region of the dielectric film; irradiating an ionized gas cluster to a second region of the dielectric film where the electrode is not formed; and removing the second region of the dielectric film where the ionized gas cluster is irradiated by a wet etching after the irradiating of the ionized gas cluster.

Abstract: A worm wheel is provided in which a step is not formed near a tooth face meshing with a worm, and noise does not easily occur during power transmission. A worm wheel 1 includes a circular arc-shaped tooth section 5 that is a portion meshing with a worm 101 and configuring a circular tube worm gear, and a helical tooth section 4 that is connected to one end side of the circular arc-shaped tooth section 5. An angle of torsion at an arbitrary reference point 14 in a tooth depth direction of a tooth 3 on a boundary 7 between the circular arc-shaped tooth section 5 and the helical tooth section 4 is equal to an angle of torsion at a second reference point 15 corresponding to the first reference point 14 in the tooth depth direction of the tooth 3 in a diameter portion P0 of a throat of the circular arc-shaped section 5. As a result, a step is not formed on a tooth face on the boundary 7 between the circular arc-shaped tooth section 5 and the helical tooth section 4.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

Abstract: A mechanical seal device for obtaining appropriate sliding properties under any conditions, such as a pressure of seal is low or high. Both first grooves 463 and second grooves 464 are formed on a sliding face 46 of a stationary ring 46. The first grooves which are not in communication externally and act for reducing contact resistance of a sliding face by a dynamic pressure action when a rotary shaft rotates, the second grooves act for reducing the contact resistance of the sliding face constantly by introducing a pressure from external. Thus, a mechanical seal device which is available to seal sealed fluid under an appropriate dry contact status wherein a sliding face load is reduced in any condition can be provided.

Abstract: It is provided a storage system for inputting and outputting data in accordance with a request from a host computer, comprising: at least one processor for processing data requested to be input or output; a plurality of transfer controllers for transferring data between memories in the storage system; and at least one transfer sequencer for requesting a data transfer to the plurality of transfer controllers in accordance with an instruction from the processor. The processor transmits a series of data transfer requests to the at least one transfer sequencer. The at least one transfer sequencer requests a data transfer to each of the plurality of transfer controllers based on the series of data transfer requests. The each transfer controller transfers data between the memories in accordance with an instruction from the at least one transfer sequencer.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.