Patents by Inventor Koji Asakawa

Koji Asakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11320736
    Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: May 3, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Ryosuke Yamamoto, Seiji Morita, Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20220091510
    Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.
    Type: Application
    Filed: March 9, 2021
    Publication date: March 24, 2022
    Applicant: Kioxia Corporation
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20220049036
    Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.
    Type: Application
    Filed: October 29, 2021
    Publication date: February 17, 2022
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Publication number: 20220024114
    Abstract: According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 ?m. The first surface includes an unevenness.
    Type: Application
    Filed: October 5, 2021
    Publication date: January 27, 2022
    Applicant: Toshiba Memory Corporation
    Inventors: Koji ASAKAWA, Shinobu SUGIMURA
  • Patent number: 11192971
    Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: December 7, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
  • Patent number: 11192972
    Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: December 7, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Koji Asakawa, Norikatsu Sasao, Shinobu Sugimura
  • Patent number: 11177129
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: November 16, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
  • Patent number: 11167469
    Abstract: According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 ?m. The first surface includes an unevenness.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: November 9, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Koji Asakawa, Shinobu Sugimura
  • Patent number: 11161999
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: November 2, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20210296116
    Abstract: A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.
    Type: Application
    Filed: August 19, 2020
    Publication date: September 23, 2021
    Applicant: Kioxia Corporation
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Publication number: 20210296117
    Abstract: A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.
    Type: Application
    Filed: September 2, 2020
    Publication date: September 23, 2021
    Applicant: Kioxia Corporation
    Inventors: Ryosuke YAMAMOTO, Koji ASAKAWA, Ayaka SUKO
  • Publication number: 20210141310
    Abstract: A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.
    Type: Application
    Filed: January 14, 2021
    Publication date: May 13, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroko NAKAMURA, Koji ASAKAWA, Naoko KIHARA, Reiko YOSHIMURA, Ko YAMADA
  • Publication number: 20210082693
    Abstract: A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: Kioxia Corporation
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Publication number: 20210070898
    Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where ? carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.
    Type: Application
    Filed: March 10, 2020
    Publication date: March 11, 2021
    Applicant: Kioxia Corporation
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20210040345
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: October 28, 2020
    Publication date: February 11, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu SASAO, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Patent number: 10877374
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: December 29, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20200291155
    Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20200294795
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20200291156
    Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Patent number: 10672621
    Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: June 2, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura