Patents by Inventor Koji Asakawa

Koji Asakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210082693
    Abstract: A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: Kioxia Corporation
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Publication number: 20210070898
    Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where ? carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.
    Type: Application
    Filed: March 10, 2020
    Publication date: March 11, 2021
    Applicant: Kioxia Corporation
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Patent number: 10937942
    Abstract: A piezoelectric element includes a substrate, a first electrode formed on the substrate, a piezoelectric layer, which is a layered structure of a plurality of piezoelectric films each containing potassium, sodium, and niobium, formed on the first electrode, and a second electrode formed on the piezoelectric layer. A sodium concentration in the piezoelectric layer has a Na local maximum value, which is a local maximum value of the sodium concentration, in a first piezoelectric film, which is among the plurality of piezoelectric films, in the vicinity of the first electrode, a sodium concentration gradient decreasing from the Na local maximum value toward the second electrode, and a Na local minimum value, which is a local minimum value of the sodium concentration, near a boundary between the first piezoelectric film and a second piezoelectric film formed immediately above the first piezoelectric film.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: March 2, 2021
    Inventors: Kazuya Kitada, Koji Sumi, Tomohiro Sakai, Toshiaki Takahashi, Tsutomu Asakawa
  • Publication number: 20210040345
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: October 28, 2020
    Publication date: February 11, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu SASAO, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Patent number: 10877374
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: December 29, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20200339208
    Abstract: A storage box power supply structure for a saddled vehicle includes a storage box (30), a carrier (50) configured to detachably mount the storage box (30) on a vehicle body, a hook (33) configured to connect the storage box (30) to the carrier (50), a hook receiving section (53) configured to receive the hook (33), a hook-side terminal (70) provided inside the hook (33) and configured to supply electric power to an electrical component (46), and a receiving-side terminal (80) provided in the hook receiving section (53) and connected to the hook-side terminal (70) when the storage box (30) is mounted on the carrier (50).
    Type: Application
    Filed: December 27, 2018
    Publication date: October 29, 2020
    Inventors: Koji Inose, Eijiro Asakawa, Yoshiyuki Horii
  • Publication number: 20200324843
    Abstract: A storage box power supply structure for a saddled vehicle includes a storage box (30), a carrier (50) configured to detachably mount the storage box (30) on a vehicle body, a stopper (36) configured to position the storage box (30) on the carrier (50), a stopper receiving section (56) configured to receive the stopper (36), a stopper-side terminal (70) provided on the stopper (36) and configured to supply electric power to an electrical component (46), and a receiving-side terminal (80) provided on the stopper receiving section (56), connected to the stopper-side terminal (70) when the storage box (30) is mounted on the carrier (50) and configured to rub against the stopper-side terminal (70).
    Type: Application
    Filed: September 18, 2018
    Publication date: October 15, 2020
    Inventors: Koji Inose, Yoshiyuki Horii, Eijiro Asakawa
  • Publication number: 20200291155
    Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20200294795
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20200291156
    Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Patent number: 10672621
    Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: June 2, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20200123299
    Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Tomoaki SAWABE, Naoko KIHARA, Shinobu SUGIMURA
  • Patent number: 10553443
    Abstract: According to one embodiment, a pattern formation method includes forming a structure body on a first surface of a patterning member, the structure body having protrusions and a recess. The protrusions are arranged at a first pitch along a first direction. The first direction is aligned with the first surface. The recess is between the protrusions. The method further includes forming a resin film of a block copolymer on the structure body. The block copolymer includes first portions and second portions. The first and second portions are arranged alternately at a second pitch along the first direction. The structure body includes first and second regions. The first portions are on the first regions. The second portions on the second regions. The method further includes removing the second portions and the second regions, introducing a metal to the first regions, and etching the patterning member using the first regions.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: February 4, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Tomoaki Sawabe, Shinobu Sugimura, Koji Asakawa
  • Patent number: 10534260
    Abstract: According to one embodiment, a pattern formation method can include performing a first processing of causing a surface of a first member of a processing body to be hydrophobic. The processing body includes the first member and a second member. The second member is provided at a portion of the first member. The method can include performing a second processing of causing the processing body to contact an atmosphere including a metal compound. The second processing is after the first processing. The method can include performing a third processing of processing the processing body in an atmosphere including at least one selected from the group consisting of water, oxygen, and ozone. The third processing is after the second processing. In addition, the method can include removing, after the third processing, at least a portion of another portion of the first member by using the second member as a mask.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: January 14, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Tomoaki Sawabe, Shinobu Sugimura, Koji Asakawa
  • Publication number: 20200006076
    Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.
    Type: Application
    Filed: March 12, 2019
    Publication date: January 2, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190218321
    Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.
    Type: Application
    Filed: September 6, 2018
    Publication date: July 18, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Ryosuke YAMAMOTO, Seiji Morita, Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190169461
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 6, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190121232
    Abstract: According to one embodiment, a pattern formation method can include performing a first processing of causing a surface of a first member of a processing body to be hydrophobic. The processing body includes the first member and a second member. The second member is provided at a portion of the first member. The method can include performing a second processing of causing the processing body to contact an atmosphere including a metal compound. The second processing is after the first processing. The method can include performing a third processing of processing the processing body in an atmosphere including at least one selected from the group consisting of water, oxygen, and ozone. The third processing is after the second processing. In addition, the method can include removing, after the third processing, at least a portion of another portion of the first member by using the second member as a mask.
    Type: Application
    Filed: August 13, 2018
    Publication date: April 25, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Tomoaki SAWABE, Shinobu Sugimura, Koji Asakawa
  • Publication number: 20190086804
    Abstract: A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.
    Type: Application
    Filed: March 16, 2018
    Publication date: March 21, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroko Nakamura, Koji Asakawa, Naoko Kihara, Reiko Yoshimura, Ko Yamada
  • Publication number: 20190084829
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: March 9, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji Asakawa, Seekei Lee, Naoko Kihara, Tomoaki Sawabe, Shinobu Sugimura