Patents by Inventor Koji Fujisaki

Koji Fujisaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190292046
    Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.
    Type: Application
    Filed: November 7, 2018
    Publication date: September 26, 2019
    Applicant: HITACHI, LTD.
    Inventors: Toshiyuki MINE, Keiji WATANABE, Koji FUJISAKI, Masaharu KINOSHITA, Masatoshi MORISHITA, Daisuke RYUZAKI
  • Patent number: 10305344
    Abstract: A drive device includes a shaft rotatably supported by a first bearing and a second bearing. The first bearing is disposed in a shaft hole of an output frame end. The second bearing is disposed in a bearing box of an opposite-to-output frame end. An oil seal is fixed in the shaft hole and is closer to an output end than the first bearing is, and is in sliding contact with an outer circumference of the shaft. A biasing member is housed in the bearing box and biases an outer race of the second bearing toward the output end. Accordingly, a deflection amount and a bend amount of the shaft at the location where the oil seal is disposed may be reduced.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: May 28, 2019
    Assignee: DENSO CORPORATION
    Inventors: Katsuya Fujisaki, Koji Isogai, Hiroki Tomizawa, Makoto Taniguchi, Masahiro Goto
  • Patent number: 10196542
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: February 5, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD
    Inventors: Hisataka Minami, Toshiaki Akutsu, Tomohiro Iwano, Koji Fujisaki
  • Patent number: 9932497
    Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces a liquid phase having a content of a non-volatile component of 300 ppm or more when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×105 G.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: April 3, 2018
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Publication number: 20170040379
    Abstract: An object of the present invention is to reduce a pitch of selection transistors to select two directions in a semiconductor substrate surface of a three-dimensional vertical semiconductor storage device to reduce a dimension in the semiconductor substrate surface. Gates of selection transistors extending in the same direction are formed by a different process for every other gate, so that the thickness of channel semiconductor layers of the selection transistors can be reduced to almost the same thickness of the thickness of an inversion layer while the channel semiconductor layers and an electrode are contacted over a wide area. On/off control can be executed independently on the channel semiconductor layers formed at two sidewalls of the gates of the selection transistors formed at a pitch of 2F. As a result, dimensions of two directions in the semiconductor substrate surface can be set to 2F without generating double selection.
    Type: Application
    Filed: December 27, 2013
    Publication date: February 9, 2017
    Inventors: Yoshitaka SASAGO, Hiroshi YOSHITAKE, Koji FUJISAKI, Takashi KOBAYASHI, Makoto KUDO
  • Patent number: 9490328
    Abstract: In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: November 8, 2016
    Assignee: HITACHI, LTD.
    Inventors: Naoki Tega, Keisuke Kobayashi, Koji Fujisaki, Takashi Takahama
  • Patent number: 9346978
    Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and a difference between a NO3? concentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NO3? concentration after retaining the aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: May 24, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Patent number: 9346977
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: May 24, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Hisataka Minami, Toshiaki Akutsu, Tomohiro Iwano, Koji Fujisaki
  • Publication number: 20160141371
    Abstract: In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.
    Type: Application
    Filed: June 6, 2013
    Publication date: May 19, 2016
    Applicant: HITACHI, LTD.
    Inventors: Naoki TEGA, Keisuke KOBAYASHI, Koji FUJISAKI, Takashi TAKAHAMA
  • Publication number: 20160040041
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.
    Type: Application
    Filed: October 21, 2015
    Publication date: February 11, 2016
    Inventors: Hisataka MINAMI, Toshiaki AKUTSU, Tomohiro IWANO, Koji FUJISAKI
  • Patent number: 9163162
    Abstract: A polishing agent according to one embodiment of the present invention contains a liquid medium, an abrasive grain including a hydroxide of a tetravalent metal element, a polymer compound having an aromatic ring and a polyoxyalkylene chain, and a cationic polymer, wherein a weight average molecular weight of the polymer compound is 1000 or more.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: October 20, 2015
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Toshiaki Akutsu, Hisataka Minami, Tomohiro Iwano, Koji Fujisaki
  • Publication number: 20150232704
    Abstract: A polishing agent according to one embodiment of the present invention contains a liquid medium, an abrasive grain including a hydroxide of a tetravalent metal element, a polymer compound having an aromatic ring and a polyoxyalkylene chain, and a cationic polymer, wherein a weight average molecular weight of the polymer compound is 1000 or more.
    Type: Application
    Filed: July 30, 2013
    Publication date: August 20, 2015
    Inventors: Toshiaki Akutsu, Hisataka Minami, Tomohiro Iwano, Koji Fujisaki
  • Publication number: 20150140904
    Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces a liquid phase having a content of a non-volatile component of 300 ppm or more when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×105 G.
    Type: Application
    Filed: March 26, 2013
    Publication date: May 21, 2015
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Publication number: 20150139885
    Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, and produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
    Type: Application
    Filed: March 26, 2013
    Publication date: May 21, 2015
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Publication number: 20150129796
    Abstract: A method for manufacturing an abrasive grain, comprising a step of obtaining a particle including a hydroxide of a tetravalent metal element by mixing a metal salt solution comprising a salt of the tetravalent metal element with an alkali liquid, wherein a temperature of a mixed liquid of the metal salt solution and the alkali liquid is 30° C. or more.
    Type: Application
    Filed: March 26, 2013
    Publication date: May 14, 2015
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Publication number: 20150132208
    Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and a difference between a NO3? concentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NO3? concentration after retaining the aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.
    Type: Application
    Filed: March 26, 2013
    Publication date: May 14, 2015
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Publication number: 20150098887
    Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×105 G.
    Type: Application
    Filed: March 26, 2013
    Publication date: April 9, 2015
    Inventors: Tomohiro Iwano, Hisataka Minami, Toshiaki Akutsu, Koji Fujisaki
  • Publication number: 20150024596
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.
    Type: Application
    Filed: February 14, 2013
    Publication date: January 22, 2015
    Inventors: Hisataka Minami, Toshiaki Akutsu, Tomohiro Iwano, Koji Fujisaki
  • Publication number: 20150017806
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.
    Type: Application
    Filed: February 14, 2013
    Publication date: January 15, 2015
    Inventors: Toshiaki Akutsu, Hisataka Minami, Tomohiro Iwano, Koji Fujisaki
  • Patent number: 5570506
    Abstract: Low-thermal-expansivity polyimides have a linear rigid skeleton, so that adhesion between perfectly cured low-thermal-expansivity polyimide films is very low. On the other hand, a film of a polyimide having a flexible skeleton shows high adhesiveness even after perfect curing, so that it is possible to enhance adhesion between the low-thermal-expansivity polyimide films by interposing a polyimide having a flexible skeleton. A flexible polyimide thin film is formed as a highly adhesive film on a low-thermal-expansivity polyimide film in a half-cured state, then metallic wiring is applied thereon, followed by formation of another highly adhesive thin film in a half-cured state, and then a low-thermal-expansivity polyimide film is further formed thereon. It is possible to provide a multilayer wiring structure which has improved adhesion between the low-thermal-expansivity polyimide film and the wiring pattern layer or the substrate.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: November 5, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Rie Tawata, Shunichi Numata, Takao Miwa, Koji Fujisaki, Takayoshi Ikeda, Yoshiaki Okabe, Hisae Shimanoki