Abstract: An oxide sintered body substantially formed from indium, tin, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% in terms of an atomic ratio of Sn/(In+Sn+Mg), magnesium is contained at a ratio of 0.1 to 2.0% in terms of an atomic ratio of Mg/(In+Sn+Mg), and remainder being indium and oxygen, and wherein a flexural strength of the oxide sintered body is 140 MPa or more when a surface roughness Ra of the oxide sintered body is 0.3 to 0.5 ?m. Provided is an oxide sintered body for use as a sputtering target capable of reducing target cracking and particle generation during deposition, and capable of forming a thin film which exhibits superior amorphous stability and durability.

Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 m?cm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 ?m or more and 15 ?m or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a transverse intensity of 50 MPa or more, and a bulk resistance of 100 m?cm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 ?m or more and 15 ?m or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: Disclosed is a technology of manufacturing, at low cost, an epitaxial crystal substrate provided with a high-quality and uniform epitaxial layer, said technology being useful in the case of growing the epitaxial layer composed of a semiconductor having a lattice constant different from that of the substrate. The substrate, which is composed of a first compound semiconductor, and which has a step-terrace structure on the surface, is used, and on the surface of the substrate, a composition modulation layer composed of a second compound semiconductor is grown by step-flow, while changing the composition in the same terrace. Then, the epitaxial crystal substrate is manufactured by growing, on the composition modulation layer, the epitaxial layer composed of the third compound semiconductor having the lattice constant different from that of the first compound semiconductor.

Abstract: Provided is a semiconductor epitaxial substrate which has low semiconductor layer mosaicity and is suitable for the production of a semiconductor device. Specifically provided is a semiconductor epitaxial substrate formed by epitaxially growing a graded buffer layer which is compositionally graded such that the lattice constant increases in stages within a range from a first lattice constant to a second lattice constant larger than the first lattice constant, and a semiconductor layer produced from a semiconductor crystal having the second lattice constant on a semiconductor substrate having the first lattice constant. The angle formed by the (mnn) plane (m and n are integers except m=n=0) of the semiconductor layer and the (mnn) plane of the semiconductor substrate is set to +0.05° or more when the direction that rotates clockwise from the [100] direction to the [011] direction is positive.

Abstract: Disclosed is a technology of manufacturing, at low cost, an epitaxial crystal substrate provided with a high-quality and uniform epitaxial layer, said technology being useful in the case of growing the epitaxial layer composed of a semiconductor having a lattice constant different from that of the substrate. The substrate, which is composed of a first compound semiconductor, and which has a step-terrace structure on the surface, is used, and on the surface of the substrate, a composition modulation layer composed of a second compound semiconductor is grown by step-flow, while changing the composition in the same terrace. Then, the epitaxial crystal substrate is manufactured by growing, on the composition modulation layer, the epitaxial layer composed of the third compound semiconductor having the lattice constant different from that of the first compound semiconductor.