Patents by Inventor Koji Kobashi

Koji Kobashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10689408
    Abstract: It is intended to provide a novel bisphosphonic acid compound or a salt thereof which shows a remarkable inhibitory effect on ectopic calcification, and a pharmaceutical composition comprising the same. The present invention provides a bisphosphonic acid compound represented by the following formula (1) or a pharmaceutically acceptable salt thereof: wherein represents a single bond or a double bond; A represents a saturated cyclic hydrocarbon or a saturated heterocyclic ring comprising a sulfur atom or an oxygen atom; and R1 and R2 each independently represent an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, a haloalkoxy group, a haloalkyl group, a halogen atom or a hydrogen atom.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: June 23, 2020
    Assignee: FUJIYAKUHIN CO., LTD.
    Inventors: Seiichi Kobashi, Yoshinobu Aoyagi, Hiroshige Kato, Ryuko Tokuyama, Naoki Ashizawa, Koichi Ishida, Koji Matsumoto
  • Publication number: 20200026305
    Abstract: A haul vehicle control system includes a reference line creating unit configured to create, on the basis of a boundary curve of a running area in a work site where a haul vehicle runs, a reference line set in the running area, and a running course creating unit configured to create a running course for the haul vehicle which is set in the running area on the basis of the reference line.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 23, 2020
    Inventors: Takashi Maekawa, Taketoshi Suzuki, Riku Usami, Yuji Kobashi, Koji Takeda, Tomikazu Tanuki
  • Publication number: 20100219350
    Abstract: A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device. In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7.
    Type: Application
    Filed: February 27, 2007
    Publication date: September 2, 2010
    Inventors: Koji Kobashi, Takeshi Tachibana, Yoshihiro Yokota, Kazushi Hayashi
  • Patent number: 7311977
    Abstract: A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]?[O])/[CH3+H2+O2] is ?0.2×10?2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.
    Type: Grant
    Filed: November 18, 2005
    Date of Patent: December 25, 2007
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Yoshihiro Yokota, Kazushi Hayashi, Takeshi Tachibana, Koji Kobashi
  • Patent number: 7285479
    Abstract: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.
    Type: Grant
    Filed: January 10, 2006
    Date of Patent: October 23, 2007
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Takeshi Tachibana, Kazushi Hayashi, Yoshihiro Yokota, Koji Kobashi, Takashi Kobori
  • Publication number: 20060175293
    Abstract: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.
    Type: Application
    Filed: January 10, 2006
    Publication date: August 10, 2006
    Inventors: Takeshi Tachibana, Kazushi Hayashi, Yoshihiro Yokota, Koji Kobashi, Takashi Kobori
  • Patent number: 7067903
    Abstract: A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
    Type: Grant
    Filed: November 6, 2003
    Date of Patent: June 27, 2006
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Takeshi Tachibana, Kazushi Hayashi, Kenichi Inoue, Yoshihiro Yokota, Koji Kobashi, Nobuyuki Kawakami, Takashi Kobori
  • Publication number: 20060112874
    Abstract: A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]?[O])/[CH3+H2+O2] is ?0.2×10?2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.
    Type: Application
    Filed: November 18, 2005
    Publication date: June 1, 2006
    Inventors: Yoshihiro Yokota, Kazushi Hayashi, Takeshi Tachibana, Koji Kobashi
  • Publication number: 20040238946
    Abstract: A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
    Type: Application
    Filed: November 6, 2003
    Publication date: December 2, 2004
    Applicant: Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Takeshi Tachibana, Kazushi Hayashi, Kenichi Inoue, Yoshihiro Yokoto, Koji Kobashi, Nobuyuki Kawakami, Takashi Kobori
  • Patent number: 6383288
    Abstract: A method of forming a diamond film includes synthesizing a diamond film on a surface of a substrate, where the surface of the substrate has trenches. The trenches inhibit delamination of the diamond film.
    Type: Grant
    Filed: January 19, 1999
    Date of Patent: May 7, 2002
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kazushi Hayashi, Yoshihiro Yokota, Koji Kobashi
  • Patent number: 6198218
    Abstract: An organic LED is provided that can stably and efficiently emit light as a result of a heat resistant hole drift layer. The organic LED can include, in order, a substrate, a hole injection electrode layer, a hole drift layer, an organic light emitting layer, an electron drift layer and an electron injection electrode layer. The hole drift layer comprises a diamond film with a boron concentration of between about 1.0×1019 and about 1.0×1021/cm3. An optically transparent layer can be formed on the electron injection electrode layer.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: March 6, 2001
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Koji Kobashi, Yoshihiro Yokota, Takeshi Tachibana, Kazushi Hayashi, Maki Hamaguchi, Katsumi Yoshino
  • Patent number: 6080378
    Abstract: Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: June 27, 2000
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Yoshihiro Yokota, Takeshi Tachibana, Koichi Miyata, Koji Kobashi
  • Patent number: 6072275
    Abstract: A light emitting element and a flat panel display that includes the element has a diamond film, which can achieve a stable and strong light emission with low electricity consumption. The light emitting element has a multilayer structure with an optional base material, a lower electrode, a diamond film, a fluorescent thin film, an upper electrode, and an upper electrode for wiring purposes. Under a proper biasing voltage between the lower and upper electrodes, carriers (either electrons or holes) are injected from the lower electrode to the diamond film, and are accelerated in the diamond film, so as to excite the fluorescent thin film and cause the thin film to fluoresce.
    Type: Grant
    Filed: May 13, 1998
    Date of Patent: June 6, 2000
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventor: Koji Kobashi
  • Patent number: 5888846
    Abstract: A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: March 30, 1999
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Koichi Miyata, Koji Kobashi, Kohei Suzuki, Toshihisa Nozawa
  • Patent number: 5869390
    Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.
    Type: Grant
    Filed: June 9, 1997
    Date of Patent: February 9, 1999
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kozo Nishimura, Koji Kobashi, Shigeaki Miyauchi, Rie Kato, Hisashi Koyama, Kimitsugu Saito
  • Patent number: 5863324
    Abstract: Provided is a process for economically producing single crystal diamond film with a large surface area by gas-phase synthesis. The process comprises depositing platinum film or platinum alloy film containing more than 50 atomic % of platinum on a basal substrate with (111) or (001) surface while keeping the substrate temperature at 300.degree. C. or above, annealing the platinum or platinum alloy film at 1000.degree. C. or above, and performing the gas-phase synthesis of diamond using said platinum or platinum alloy film as the substrate.
    Type: Grant
    Filed: July 11, 1996
    Date of Patent: January 26, 1999
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Koji Kobashi, Takeshi Tachibana, Yoshihiro Shintani
  • Patent number: 5814149
    Abstract: A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.
    Type: Grant
    Filed: November 17, 1995
    Date of Patent: September 29, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Yoshihiro Shintani, Takeshi Tachibana, Kozo Nishimura, Koichi Miyata, Yoshihiro Yokota, Koji Kobashi
  • Patent number: 5776323
    Abstract: The present invention is a diamond electrode with high efficiency, a small overvoltage, and a long lifetime, which is reusable, and which can measure the temperature of the electrode. The diamond electrode is at least partially composed of a semiconducting diamond film, whose surface is chemically modified. Another embodiment of the present invention carbon is used as a bare electrode material, diamond crystals are fixed to the bare electrode material, the surface of the undoped diamond crystals are covered with semiconducting diamond film, or semiconducting diamond crystals are fixed to said bare electrode material, and the surfaces of diamond films or crystals are chemically modified. Furthermore, wires may be connected to the diamond electrode to measure the electrical resistance, and hence the temperature.
    Type: Grant
    Filed: June 26, 1996
    Date of Patent: July 7, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventor: Koji Kobashi
  • Patent number: 5777372
    Abstract: A diamond film biosensor has a transducer that is partially or totally composed of semiconducting diamond film and/or undoped diamond film. A bioidentifier is fixed partly or entirely on the surface of said semiconducting diamond film and/or undoped diamond film. The peripheral circuits are partly or entirely composed of undoped diamond film and/or semiconducting diamond film. The diamond film biosensor can detect chemical substances and biosubstances with a high sensitivity and fast response, has a long lifetime, and is reusable.
    Type: Grant
    Filed: March 1, 1996
    Date of Patent: July 7, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventor: Koji Kobashi
  • Patent number: 5770467
    Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.
    Type: Grant
    Filed: March 29, 1996
    Date of Patent: June 23, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kozo Nishimura, Koji Kobashi, Shigeaki Miyauchi, Rie Kato, Hisashi Koyama, Kimitsugu Saito