Abstract: A method for manufacturing a joined member and a joined member manufacturing apparatus which can manufacture a joined member with a joint portion having an appropriate hardness.

Abstract: A method of laser-depositing at least one type of organic material, characterized in that a duty ratio of a laser that evaporates the organic material is adjusted, which addresses the problem of providing an organic material deposition method and deposition apparatus that solve the issues in the conventional art, such as the organic material vaporizing and contaminating the other raw materials to be deposited, and the film formation rate running out of control, and whereby the film formation rate and the evaporation rate can be stably adjusted and controlled. Additionally, the invention is characterized in that the duty ratio is adjusted based on the evaporation rate of the organic substance or the vapor pressure inside the vacuum chamber used for deposition.

Abstract: A heat receiver, a reactor, and a heater utilize the heat of concentrated solar light for thermal decomposition and/or chemical reaction of coals, etc. The heat receiver includes: a side portion forming a substantially cylindrical side surface; a substantially circular bottom portion connected to the lower edge of the side portion; and a ceiling connected to the upper edge of the side portion. A substantially circular aperture is formed in the center of the ceiling. The heat receiver has a substantially cylindrical cavity and the opening portion is open. When the cavity has a diameter of D and a length of L, and the aperture has a diameter of d, d=D/2 or less and L=2D or more. Concentrated solar light entering the heat receiver is to be contained in the heat receiver to effectively utilize the solar light.

Abstract: A method for manufacturing a joined member and a joined member manufacturing apparatus which can manufacture a joined member with a joint portion having an appropriate hardness.

Abstract: A method of laser-depositing at least one type of organic material, characterized in that a duty ratio of a laser that evaporates the organic material is adjusted, which addresses the problem of providing an organic material deposition method and deposition apparatus that solve the issues in the conventional art, such as the organic material vaporizing and contaminating the other raw materials to be deposited, and the film formation rate running out of control, and whereby the film formation rate and the evaporation rate can be stably adjusted and controlled. Additionally, the invention is characterized in that the duty ratio is adjusted based on the evaporation rate of the organic substance or the vapor pressure inside the vacuum chamber used for deposition.

Abstract: A heat receiver, a reactor, and a heater utilize the heat of concentrated solar light for thermal decomposition and/or chemical reaction of coals, etc. The heat receiver includes: a side portion forming a substantially cylindrical side surface; a substantially circular bottom portion connected to the lower edge of the side portion; and a ceiling connected to the upper edge of the side portion. A substantially circular aperture is formed in the center of the ceiling. The heat receiver has a substantially cylindrical cavity and the opening portion is open. When the cavity has a diameter of D and a length of L, and the aperture has a diameter of d, d=D/2 or less and L=2D or more. Concentrated solar light entering the heat receiver is to be contained in the heat receiver to effectively utilize the solar light.

Abstract: An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x<y and a relationship of x<z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency.

Abstract: A band saw has a housing, a pair of wheels rotatably disposed on the housing, a drive unit connected to one of the wheel, a continuous band saw blade supported by the wheels, and a guide movably attached to the housing. The guide is positioned to contact with the band saw blade in a thickness direction of the band saw blade in order to restrict movement of the band saw blade in its thickness direction.

Abstract: A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.

Abstract: An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x<y and a relationship of x<z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency.

Abstract: The present invention aims at avoiding a hung-up in the case where a command is sent from a controller within a printer but there is no response to the command from the unit side within the printer, due to a faulty communication or the like, and also in the case where a noise is introduced in the communication data. In the present invention, based on a command sent to the unit side, a data amount of a response from the unit side to this command is predicted, and also a threshold value of response time is provided (S21), which is the time when from the command is sent until the time when the response is received. After the command is sent (S23) until the threshold value of the response time elapses, the receive data is sequentially stored in the receive buffer up to when the data amount from the unit side reaches the predicted data amount (S28, 32, 34).

Abstract: A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.

Abstract: The present invention aims at avoiding a hung-up in the case where a command is sent from a controller within a printer but there is no response to the command from the unit side within the printer, due to a faulty communication or the like, and also in the case where a noise is introduced in the communication data. In the present invention, based on a command sent to the unit side, a data amount of a response from the unit side to this command is predicted, and also a threshold value of response time is provided (S21), which is the time when from the command is sent until the time when the response is received. After the command is sent (S23) until the threshold value of the response time elapses, the receive data is sequentially stored in the receive buffer up to when the data amount from the unit side reaches the predicted data amount (S28, 32, 34).

Abstract: A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.

Abstract: A differential with a differential action limiting mechanism includes a differential mechanism D for distributing the drive force of an internal combustion engine inputted into a differential case 28 to a left-hand axle shaft 13 and a half shaft 11 which continuously connects to a right-hand axle shaft for output therefrom and friction clutches 44L, 44R for limiting differential rotations of the left-hand axle shaft 13 and the half shaft 11 relative to the differential case 28. An actuator A for generating an engagement force for bringing the friction clutches 44L, 44R into engagement is provided outside a housing 14 for accommodating therein the differential case 28, whereby an engagement force generated by the actuator A is transmitted to the friction clutches 44L, 44R via the half shaft 11.

Abstract: The differential includes a differential casing configured to be rotatably driven by a motor under a driving force. The differential includes a differential mechanism which includes a pair of first and second side-gears for distributing a torque of the differential casing to first and second output shafts. The differential includes a frictional clutch for interconnecting the first and second output shafts. The frictional clutch includes first and second power-transmitting members connected to first and second output shafts respectively and first and second clutch plates. The first and second clutch plates are connected to the first and second power-transmitting members respectively. The differential includes an actuator for operating the frictional clutch. One output shaft of the first and second output shafts is axially displacable by the actuator under an engagement force to engage the frictional clutch.

Abstract: A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.

Abstract: Two sensors are provided on a clutch core. Sensor coils are driven at a high frequency by a high-frequency driving circuit. As the sensors sense a magnetic flux of a magnetic circuit including the clutch core and an armature, the impedance of the sensor coils changes. In accordance with the outputs from the sensor coils at this point, an impedance detecting circuit detects the impedance of the sensor coils. Then, an impedance combining circuit combines the impedance of the sensor coils. On the basis of the combined impedance, a current control circuit controls a current supplied to an exciting coil. Thus, the attracting force of the armature to the core excited by the exciting coil is controlled.

Abstract: The differential includes a differential casing configured to rotatably drive by a motor under a driving force. The differential includes a differential mechanism which includes a pair of first and second side-gears for distributing a torque of the differential casing to first and second output shafts. The differential includes a frictional clutch for interconnecting the first and second output shafts. The frictional clutch includes a first power-transmitting member connected to a first output shaft. The frictional clutch includes a second power-transmitting member connected to a second output shaft. The frictional clutch includes first and second clutch plates axially displacable to engage with each other. A first clutch plate is connected to the first power-transmitting member. A second clutch plate is connected to the second power-transmitting member. The differential includes an actuator for operating the frictional clutch.

Abstract: In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high temperature of 500° C. or more, and supply of oxygen is stopped and gradual cooling is carried out until a substrate temperature is lowered to 350° C. or less after the growth of the ZnO based oxide semiconductor layer is completed. As a result, it is possible to suppress the generation of dislocations or crystal defects over an epitaxial grown layer based on the atmosphere while the substrate temperature is lowered after the growth of the semiconductor layer and a difference in a coefficient of thermal expansion, thereby obtaining a semiconductor device having a high quality ZnO based oxide semiconductor layer which has an excellent crystalline property and a semiconductor light emitting device having the high characteristics.