Abstract: An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Abstract: An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

Abstract: An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. Therefore, the invention provides a method for narrowing (miniaturizing) the line width according to a method different from a conventional method. A region to be liquid-repellent is formed and further, a region to be lyophilic is formed selectively in the region to be liquid-repellent in a surface for forming a pattern, before forming a desired pattern. After that, a pattern for a wiring or the like is formed in the lyophilic region by a dropping method typified by an ink-jetting method for dropping a composition including a conductive material for the wiring or the like.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated structure by forming an interlayer insulating layer with an organic resin.

Abstract: An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a manufacturing step of a semiconductor device in which a substance with high safety and that is easily treated can be used as a peeling solution, and which pays attention to an environment. A resist composition of the invention contains water-soluble homopolymer, water, or a solvent that has compatibility with water and can dissolve the water-soluble homopolymer. In addition, a method for manufacturing the semiconductor device of the invention has a step of removing the protective film formed by discharging the resist composition of the invention by using a drawing means with water after using it.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Abstract: The present invention provides a thin film transistor that can be manufactured at lower cost and at higher yield by simplifying a manufacturing process, a manufacturing method thereof, and a manufacturing method of a display device using the thin film transistor. According to this invention, a pattern used in a pattering process is formed by using a droplet discharging method. The pattern is formed by selectively discharging a composition comprising an organic resin. By using the pattern, an electrically conductive material, an insulator or semiconductor constituting a semiconductor element, are patterned into a desired shape by a simple process.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. Therefore, the invention provides a method for narrowing (miniaturizing) the line width according to a method different from a conventional method. A region to be liquid-repellent is formed and further, a region to be lyophilic is formed selectively in the region to be liquid-repellent in a surface for forming a pattern, before forming a desired pattern. After that, a pattern for a wiring or the like is formed in the lyophilic region by a dropping method typified by an ink-jetting method for dropping a composition including a conductive material for the wiring or the like.

Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.

Abstract: An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

Abstract: An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated structure by forming an interlayer insulating layer with an organic resin.

Abstract: It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Abstract: An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a manufacturing step of a semiconductor device in which a substance with high safety and that is easily treated can be used as a peeling solution, and which pays attention to an environment. A resist composition of the invention contains water-soluble homopolymer, water, or a solvent that has compatibility with water and can dissolve the water-soluble homopolymer. In addition, a method for manufacturing the semiconductor device of the invention has a step of removing the protective film formed by discharging the resist composition of the invention by using a drawing means with water after using it.

Abstract: The method of manufacturing soft magnetic articles comprises a step of preparing a melt solution containing soft magnetic materials and a step of forming soft magnetic particles from the melt solution in a magnetic field by an atomization rapid solidification method.