Patents by Inventor Koji Soma

Koji Soma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10792889
    Abstract: A thermal transfer sheet includes a support film and a transfer layer provided on one surface of the support film. The transfer layer at least includes a decorative layer and an adhesive layer provided on an obverse side of the decorative layer. The adhesive layer includes a first adhesive layer and a second adhesive layer laminated on the first adhesive layer. The first adhesive layer is positioned on an obverse side of the second adhesive layer. The first adhesive layer is made of a first resin having thermal plasticity and has a lower viscosity than the second adhesive layer. The second adhesive layer is made of a second resin having thermal plasticity and has a higher glass-transition point than the first adhesive layer. Monomer units constituting the first resin and monomer units constituting the second resin are partly or entirely identical.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: October 6, 2020
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Koji Kuno, Tsuyoshi Suzuki, Ryohei Utsumi, Yukiyoshi Soma, Daisuke Miyachi
  • Patent number: 10473075
    Abstract: An objective of the present invention is to provide a fuel rail that can be used at a high fuel pressure of 50 MPa or more, for example, has good engine mountability, and has improved material yield.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: November 12, 2019
    Assignee: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Eiichi Kubota, Koji Harada, Keiichi Uraki, Shinya Nakatani, Hiroshi Ono, Masahiro Soma
  • Patent number: 7173681
    Abstract: In an electrode substrate used in a liquid crystal display device, a contact hole for connecting a signal line to a drain electrode of a pixel thin film transistor is provided in a position overlapping a pixel electrode in order to improve yields by reducing a short circuit between adjacent pixel electrodes. With this configuration, the contact hole does not exist at a boundary between the two adjacent pixel electrodes. Accordingly, the pixel electrodes do not suffer an influence of an electrode material remaining at a recess of the contact hole, and a short circuit between the adjacent pixel electrodes can be thereby prevented.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: February 6, 2007
    Assignee: Toshiba Matsushita Display Technology Co., Ltd.
    Inventors: Hideyuki Takahashi, Kohei Nagayama, Mamoru Furuta, Shinichi Kawamura, Toshihiro Ninomiya, Koji Soma
  • Publication number: 20040160543
    Abstract: In an electrode substrate used in a liquid crystal display device, a contact hole for connecting a signal line to a drain electrode of a pixel thin film transistor is provided in a position overlapping a pixel electrode in order to improve yields by reducing a short circuit between adjacent pixel electrodes. With this configuration, the contact hole does not exist at a boundary between the two adjacent pixel electrodes. Accordingly, the pixel electrodes do not suffer an influence of an electrode material remaining at a recess of the contact hole, and a short circuit between the adjacent pixel electrodes can be thereby prevented.
    Type: Application
    Filed: February 4, 2004
    Publication date: August 19, 2004
    Applicant: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Hideyuki Takahashi, Kohei Nagayama, Mamoru Furuta, Shinichi Kawamura, Toshihiro Ninomiya, Koji Soma
  • Patent number: 6420760
    Abstract: A first insulation film is formed as a gate insulation film of a thin film transistor, and a gate electrode is formed on the gate insulation film. Then, dopant is implanted to form source and drain regions. A second insulation film having refractive index n1 and film thickness d2 is formed to cover the first insulation film and gate electrode as an interlayer insulation film. After forming the second insulation film, laser with wavelength &lgr; is applied to activate the dopant. The film thicknesses d1 and d2 of the first and second insulation films satisfy conditions against the laser wavelength &lgr; for forming a reflection protective film at regions where activation is necessary. At the same time, the film thicknesses d1 and d2 are set in a way that the interlayer insulation film on the gate electrode forms a reflective film. This reduces the thermal damage to the gate electrode from the laser during dopant activation.
    Type: Grant
    Filed: August 29, 2001
    Date of Patent: July 16, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Furuta, Koji Soma
  • Publication number: 20020004260
    Abstract: A first insulation film is formed as a gate insulation film of a thin film transistor, and a gate electrode is formed on the gate insulation film. Then, dopant is implanted to form source and drain regions. A second insulation film having refractive index n1 and film thickness d2 is formed to cover the first insulation film and gate electrode as an interlayer insulation film. After forming the second insulation film, laser with wavelength &lgr; is applied to activate the dopant. The film thicknesses d1 and d2 of the first and second insulation films satisfy conditions against the laser wavelength &lgr; for forming a reflection protective film at regions where activation is necessary. At the same time, the film thicknesses d1 and d2 are set in a way that the interlayer insulation film on the gate electrode forms a reflective film. This reduces the thermal damage to the gate electrode from the laser during dopant activation.
    Type: Application
    Filed: August 29, 2001
    Publication date: January 10, 2002
    Inventors: Mamoru Furuta, Koji Soma
  • Patent number: 6309917
    Abstract: A first insulation film is formed as a gate insulation film of a thin film transistor, and a gate electrode is formed on the gate insulation film. Then, dopant is implanted to form source and drain regions. A second insulation film having refractive index n1 and film thickness d2 is formed to cover the first insulation film and gate electrode as an interlayer insulation film. After forming the second insulation film, laser with wavelength &lgr; is applied to activate the dopant. The film thicknesses d1 and d2 of the first and second insulation films satisfy conditions against the laser wavelength &lgr; for forming a reflection protective film at regions where activation is necessary. At the same time, the film thicknesses d1 and d2 are set in a way that the interlayer insulation film on the gate electrode forms a reflective film. This reduces the thermal damage to the gate electrode from the laser during dopant activation.
    Type: Grant
    Filed: May 9, 2000
    Date of Patent: October 30, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Furuta, Koji Soma