Patents by Inventor Koji Takayanagi

Koji Takayanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734251
    Abstract: A filtration efficiency, which is similar to the filtration efficiency obtained when a plurality of filters are provided, can be obtained by one filter, and decrease in throughput can be prevented. Based on a control signal from a control unit 101, a resist liquid L is sucked into a pump 70 through a filter. A part of the resist liquid sucked in the pump is discharged from a discharge nozzle 7. The remaining resist liquid is returned to a supply conduit 51b on a primary side of the filter. A process is synthesized by adding a replenishment amount equal to the discharge amount to the return amount. The discharge of the synthesized process liquid and the filtration thereof by the filter are performed the number of times corresponding to a rate between the discharge amount and the return amount.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: August 4, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Koji Takayanagi, Yukie Minekawa, Yuichi Yoshida, Kousuke Yoshihara, Yuichi Terashita, Toshinobu Furusho, Takashi Sasa
  • Publication number: 20200227286
    Abstract: Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.
    Type: Application
    Filed: August 2, 2018
    Publication date: July 16, 2020
    Inventors: Yuichi Terashita, Kousuke Yoshihara, Koji Takayanagi, Toshinobu Furusho, Takashi Sasa
  • Publication number: 20200110343
    Abstract: A coating and developing apparatus includes: a processing block having a plurality of substrate transport areas vertically stacked and partitioned from each other; a processing module provided in each of the plurality of substrate transport areas; a transport mechanism configured to transport a substrate between the transport block and the processing module; a temperature adjustment module configured to adjust a temperature of the substrate before the substrate is transported to at least one processing module among the plurality of the processing modules; a temperature sensor configured to detect an atmospheric temperature of at least one substrate transport area; and a temperature controller configured to change the temperature of the substrate in the temperature adjustment module based on the atmospheric temperature detected by the temperature sensor.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Inventors: Keigo Nakano, Koji Takayanagi, Masashi Tsuchiyama
  • Publication number: 20200016521
    Abstract: In one embodiment, after a new filter unit is installed in a treatment liquid supply apparatus, there is performed, before a solvent-containing treatment liquid is passed through the filter unit, a step of soaking the filter unit with a solvent for pretreatment and then discharging therefrom the solvent. The solubility of a material, constituting a filter part of the filter unit, to the solvent is greater than the solubility of the material to the treatment liquid. This step makes it possible to remove a component, which may elute from the filter part into the treatment liquid to produce foreign matters (particles), before treatment liquid is passed through the filter unit.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 16, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Yuichi YOSHIDA, Ryouichirou NAITOU, Arnaud Alain Jean DAUENDORFFER, Koji TAKAYANAGI, Shinobu MIYAZAKI
  • Patent number: 10493387
    Abstract: In one embodiment, after a new filter unit (3) is installed in a treatment liquid supply apparatus, there is performed, before a solvent-containing treatment liquid is passed through the filter unit, a step of soaking the filter unit with a solvent for pretreatment and then discharging therefrom the solvent. The solubility of a material, constituting a filter part (31) of the filter unit, to the solvent is greater than the solubility of the material to the treatment liquid. This step makes it possible to remove a component, which may elute from the filter part into the treatment liquid to produce foreign matters (particles), before treatment liquid is passed through the filter unit.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: December 3, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Yuichi Yoshida, Ryouichirou Naitou, Arnaud Alain Jean Dauendorffer, Koji Takayanagi, Shinobu Miyazaki
  • Patent number: 10396549
    Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. A gate width of the second transistor is narrower than a gate width of the first transistor.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: August 27, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Masashi Arakawa, Tadashi Fukui, Koji Takayanagi
  • Patent number: 10268116
    Abstract: A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: April 23, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kousuke Yoshihara, Koji Takayanagi, Toshinobu Furusho, Takashi Sasa, Daisuke Ishimaru
  • Patent number: 10256122
    Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: April 9, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masato Mizuta, Koji Takayanagi
  • Patent number: 10236868
    Abstract: A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first MOS transistors coupled in series between the second power supply and a reference power supply, and a plurality of second MOS transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first MOS transistors.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: March 19, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Koji Takayanagi
  • Publication number: 20180350777
    Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.
    Type: Application
    Filed: July 24, 2018
    Publication date: December 6, 2018
    Applicant: Renesas Electronics Corporation
    Inventor: Koji TAKAYANAGI
  • Publication number: 20180269860
    Abstract: A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first MOS transistors coupled in series between the second power supply and a reference power supply, and a plurality of second MOS transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first MOS transistors.
    Type: Application
    Filed: March 23, 2018
    Publication date: September 20, 2018
    Inventor: Koji Takayanagi
  • Patent number: 10074546
    Abstract: Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: September 11, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Yuichi Terashita, Kousuke Yoshihara, Koji Takayanagi, Toshinobu Furusho, Takashi Sasa
  • Publication number: 20180254205
    Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.
    Type: Application
    Filed: May 4, 2018
    Publication date: September 6, 2018
    Inventors: Masato MIZUTA, Koji TAKAYANAGI
  • Patent number: 10062669
    Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: August 28, 2018
    Assignee: Renesas Electronics Corporation
    Inventor: Koji Takayanagi
  • Publication number: 20180211832
    Abstract: There is provided a coated film removing apparatus for removing, with a removal liquid, a peripheral portion of a coated film formed by supplying a coating liquid to a surface of a circular substrate, including: a rotary holding part configured to hold the substrate and rotate together with the substrate; a removal liquid nozzle configured to discharge the removal liquid on a peripheral portion of the surface of the substrate held by the rotary holding part so that the removal liquid is oriented toward a downstream side in a rotational direction of the substrate; and a control part configured to output a control signal so as to rotate the substrate at a rotation speed of 2,300 rpm or more when discharging the removal liquid.
    Type: Application
    Filed: January 22, 2018
    Publication date: July 26, 2018
    Inventors: Takafumi HASIMOTO, Masahide TADOKORO, Taku NAGAKANE, Koji TAKAYANAGI
  • Publication number: 20180205225
    Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. Agate width of the second transistor is narrower than a gate width of the first transistor.
    Type: Application
    Filed: March 12, 2018
    Publication date: July 19, 2018
    Applicant: Renesas Electronics Corporation
    Inventors: Masashi ARAKAWA, Tadashi FUKUI, Koji TAKAYANAGI
  • Patent number: 9991140
    Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: June 5, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masato Mizuta, Koji Takayanagi
  • Patent number: 9948283
    Abstract: When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal. The level shift circuit includes a series coupling circuit, a first gate control circuit coupled to a first power supply, a second gate control circuit coupled to a second power supply of a potential higher than the potential of the first power supply, and a potential conversion circuit arranged between the first gate control circuit and the series coupling circuit. The potential conversion circuit supplies a first level potential, which is lower than the potential of the first power supply and higher than the potential of the reference power supply, to a gate of an N-channel MOS transistor of the series coupling circuit.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: April 17, 2018
    Assignee: Renesas Electronics Corporation
    Inventor: Koji Takayanagi
  • Patent number: 9948090
    Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. A gate width of the second transistor is narrower than a gate width of the first transistor.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: April 17, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Masashi Arakawa, Tadashi Fukui, Koji Takayanagi
  • Patent number: 9947534
    Abstract: A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: April 17, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kousuke Yoshihara, Koji Takayanagi, Shinichi Hatakeyama, Kohei Kawakami